Method for manufacturing semiconductor device

ABSTRACT

The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method for manufacturing asemiconductor device.

2. Description of the Related Art

In recent years, individual recognition technology has attractedattention. For example, there is a technology which is used forproduction and management, in which an ID (an individual recognitioncode) is given to an individual object to clarify information such as ahistory of the object. Above all, the development of semiconductordevices that can send and receive data without contact has beenadvanced. As such semiconductor devices, in particular, an RFID (RadioFrequency Identification) tag (also referred to as an ID tag, an IC tag,IC chip, an RF (Radio Frequency) tag, a wireless tag, an electronic tag,or a wireless chip) has begun to be used in companies, markets, and thelike.

Many of such semiconductor devices each have a circuit using asemiconductor substrate such as a Si substrate (also referred to as anIC (Integrated Circuit) chip) and an antenna, and the IC chip includes amemory circuit (also referred to as a memory), a control circuit, or thelike.

In addition, semiconductor devices such as a liquid crystal displaydevice and an electroluminescent display device, in which thin filmtransistors (hereinafter also referred to as TFTs) are integrated over aglass substrate, have been developed. In each of such semiconductordevices, a thin film transistor is formed over a glass substrate byusing a technique for forming a thin film, and a liquid crystal elementor a light-emitting element (an electroluminescent element, hereinafteralso referred to as an EL element) is formed as a display element overvarious circuits composed of the thin film transistors, so that thedevice functions as a semiconductor device.

In a manufacturing process of such semiconductor devices, in order toreduce manufacturing cost, a process of transferring an element, aperipheral circuit, or the like manufactured over a glass substrate ontoan inexpensive substrate such as a plastic substrate has been performed(e.g., see Reference 1: Japanese Published Patent Application No.2002-26282).

SUMMARY OF THE INVENTION

There is, however, a problem in that an element may be broken in anelement layer to be transferred, because the element layer is not peeledoff well from a glass substrate due to the low adhesiveness between thinfilms forming the element. In other words, it is difficult to transferthe element layer with a good state in which a shape and property of theelement before peeling are kept.

The present invention has been made in view of the above describedproblems. The present invention provides a manufacturing technique of asemiconductor device and a display device using a peeling process, inwhich a transfer process can be conducted with a good state in which ashape and property of the element before peeling are kept. Therefore, itis an object of the present invention to provide a manufacturingtechnique of more highly reliable semiconductor devices and displaydevices with high yield without complicating the apparatus and theprocess for manufacturing.

According to the present invention, when an element layer is formed overa substrate, an organic compound layer including a substance having aphotocatalyst function (hereinafter, also referred to as a photocatalystsubstance) is provided between the substrate and the element layer. Thephotocatalyst substance absorbs light, and thus, the photocatalystsubstance is activated by the light. The activation energy acts onperipheral organic compound, and as a result, changes and modifiesproperties of the organic compound. In other words, by the energy of theactivated photocatalyst substance (oxidizability), a carbon-hydrogenbond and a carbon-carbon bond of such organic compound are separated,and a part of the organic compound becomes carbon dioxide and water, andis degassed. Consequently, the organic compound layer including aphotocatalyst substance becomes rough and is separated (sectioned) tothe element layer side and the substrate side within the layer.Accordingly, the element layer can be peeled from the substrate.

According to the present invention, by dispersing a photocatalystsubstance in an organic compound layer, the organic compound isdecomposed (broken) by a photocatalyst function of the photocatalystsubstance and the organic compound layer is made rough, thereby peelingthe element layer from the substrate. Thus, since it is unnecessary toapply a large amount of power to the element layer in order to peel it,there are no problems in that a film is peeled at an interface betweenlayers in the peeling process and the element is broken, andtransferring the element is not conducted in a good shape. In thisspecification, “good shape” indicates a state in which a shape beforepeeling is kept and damages in appearance such as film peeling orremaining portion are not caused, or a state in which properties beforepeeling are kept without causing reduction in electric characteristicsor reliability of the element. Also in this specification, “transfer”means to peel an element layer formed over a first substrate from thefirst substrate and to transpose it over a second substrate. In otherwords, it can also indicate that a place provided with the element layeris moved to another substrate.

In the present invention, a flexible counter substrate to be transferredmay be attached after irradiating a photocatalyst substance with light,or the photocatalyst substance may be irradiated with light afterattaching the substrate to be transferred to the element layer.

Note that in the present invention, “semiconductor device” indicatesgeneral devices which can function using semiconductive properties. Inaccordance with the present invention, devices including a circuitincluding a semiconductor element (such as a transistor or a diode) orsemiconductor devices such as processor chips can be manufactured.

The present invention can be used for a display device that is a devicehaving a display function. The display device using the presentinvention includes, in its category, a light-emitting display devicewhere a TFT is connected to a light-emitting element in which a layercontaining an organic material, an inorganic material or a mixture oforganic and inorganic materials which exhibits light emission calledelectroluminescence (hereinafter also referred to as “EL”), isinterposed between electrodes, a liquid crystal display device using aliquid crystal element including a liquid crystal material as a displayelement, and the like. In the present invention, a “display device”means devices having display elements (e.g., liquid crystal elements orlight-emitting elements). Note that the display device also includes adisplay panel itself where a plurality of pixels including a displayelement such as a liquid crystal element or an EL element, and/or aperipheral driver circuit for driving the pixels are formed over asubstrate. Further, it may include a flexible printed circuit (FPC) or aprinted wiring board (PWB) attached to a display panel (e.g., an IC, aresistor element, a capacitor element, an inductor, or a transistor).Such display devices may also include an optical sheet such as apolarizing plate or a retardation plate. Further, it may include abacklight (which may include a light guide plate, a prism sheet, adiffusion sheet, a reflective sheet, and a light source (e.g., an LED ora cold-cathode tube)).

Note that a display element or a display device may be in various modesand may include various elements. For example, there are display mediaof which contrast changes by an electromagnetic function, such as ELelements (e.g., organic EL elements, inorganic EL elements, or ELelements containing both organic and inorganic materials),electron-emissive elements, liquid crystal elements, electronic inks,grating light valves (GLV), plasma displays (PDP), digital micromirrordevices (DMD), piezoceramic displays, and carbon nanotubes. In addition,display devices using an EL element include EL displays; display devicesusing an electron-emissive element include field emission displays(FED), surface-conduction electron-emitter displays (SED), and the like;display devices using a liquid crystal element include liquid crystaldisplays, transmissive liquid crystal displays, semi-transmissive liquidcrystal displays, and reflective liquid crystal displays; and displaydevices using electronic ink include electronic papers.

One feature of the present invention is a method for manufacturing asemiconductor device, comprising the steps of forming an organiccompound layer including a photocatalyst substance over a firstsubstrate having a light-transmitting property; forming an element layerover the organic compound layer including a photocatalyst substance;irradiating the organic compound layer including a photocatalystsubstance with light which has passed through the first substrate; andseparating the element layer from the first substrate.

One feature of the present invention is a method for manufacturing asemiconductor device, comprising the steps of: forming an organiccompound layer including a photocatalyst substance over a firstsubstrate having a light-transmitting property; forming an insulatinglayer over the organic compound layer including a photocatalystsubstance; forming an element layer over the insulating layer;irradiating the organic compound layer including a photocatalystsubstance with light which has passed through the first substrate; andseparating the element layer and the insulating layer from the firstsubstrate.

One feature of the present invention is a method for manufacturing asemiconductor device, comprising the steps of forming an organiccompound layer including a photocatalyst substance over a firstsubstrate having a light-transmitting property; forming an element layerover the organic compound layer including a photocatalyst substance;irradiating the organic compound layer including a photocatalystsubstance with light which has passed through the first substrate;attaching a second substrate to the element layer; and separating theelement layer from the first substrate to the second substrate.

One feature of the present invention is a method for manufacturing asemiconductor device, comprising the steps of forming an organiccompound layer including a photocatalyst substance over a firstsubstrate having a light-transmitting property; forming an insulatinglayer over the organic compound layer including a photocatalystsubstance; forming an element layer over the insulating layer;irradiating the organic compound layer including a photocatalystsubstance with light which has passed through the first substrate;attaching a second substrate to the element layer; and separating theelement layer and the insulating layer from the first substrate to thesecond substrate.

One feature of the present invention is a method for manufacturing asemiconductor device, comprising the steps of forming an organiccompound layer including a photocatalyst substance over a firstsubstrate having a light-transmitting property; forming an element layerover the organic compound layer including a photocatalyst substance;irradiating the organic compound layer including a photocatalystsubstance with light which has passed through the first substrate;attaching a second substrate to the element layer; separating theelement layer from the first substrate to the second substrate; andattaching the element layer to a third substrate by an adhesive layer.

One feature of the present invention is a method for manufacturing asemiconductor device, comprising the steps of forming an organiccompound layer including a photocatalyst substance over a firstsubstrate having a light-transmitting property; forming an insulatinglayer over the organic compound layer including a photocatalystsubstance; forming an element layer over the insulating layer;irradiating the organic compound layer including a photocatalystsubstance with light which has passed through the first substrate;attaching a second substrate to the element layer; separating theelement layer and the insulating layer from the first substrate to thesecond substrate; and attaching the element layer to a third substrateby an adhesive layer.

In the above structures, after separating the element layer from thefirst substrate, a third substrate attached to the element layer sidemay be formed from a material which does not transmit light in awavelength which activates the photocatalyst substance left in theelement layer. In addition, when the second substrate and the thirdsubstrate are flexible substrates, resin films or the like,semiconductor devices or display devices having flexibility can bemanufactured.

In the present invention, by dispersing the photocatalyst substance intothe organic compound layer, the organic compound is decomposed (broken)by a photocatalyst function of the photocatalyst substance and theorganic compound layer is made rough, thereby peeling the element layerfrom the substrate. Thus, since it is unnecessary to apply a largeamount of power to the element layer in order to peel it, the elementlayer can be easily and freely transferred to various types ofsubstrates in a good shape state, without breaking the element in thepeeling process.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling is kept. Therefore, more highly reliablesemiconductor devices and display devices can be manufactured with highyield without complicating the apparatus and the process formanufacturing.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1D show an aspect of the present invention;

FIGS. 2A to 2D show an aspect of the present invention;

FIGS. 3A to 3D show an aspect of the present invention;

FIGS. 4A to 4D show an aspect of the present invention;

FIGS. 5A to 5C show an aspect of the present invention;

FIGS. 6A to 6D show a manufacturing method of a display device accordingto an aspect of the present invention;

FIGS. 7A to 7D show a manufacturing method of a display device accordingto an aspect of the present invention;

FIGS. 8A and 8B each show a manufacturing method of a display deviceaccording to an aspect of the present invention;

FIGS. 9A to 9C show a manufacturing method of a display device accordingto an aspect of the present invention;

FIGS. 10A and 10B show a display device according to an aspect of thepresent invention;

FIGS. 11A to 11C show a manufacturing method of a display deviceaccording to an aspect of the present invention;

FIGS. 12A to 12C show a manufacturing method of a display deviceaccording to an aspect of the present invention;

FIGS. 13A to 13C show a manufacturing method of a display deviceaccording to an aspect of the present invention;

FIGS. 14A and 14B are a top view and a cross-sectional view of a displaydevice according to an aspect of the present invention;

FIGS. 15A and 15B are a top view and a cross-sectional view of a displaydevice according to an aspect of the present invention;

FIG. 16 is a cross-sectional view of a semiconductor device according toan aspect of the present invention;

FIG. 17 is a cross-sectional view of a semiconductor device according toan aspect of the present invention;

FIGS. 18A to 18D each show a structure of a light-emitting element whichcan be applied to the present invention;

FIGS. 19A to 19F each show a structure of a pixel which can be appliedto a display device according to an aspect of the present invention;

FIGS. 20A to 20C each are a cross-sectional view of a display deviceaccording to an aspect of the present invention;

FIGS. 21A and 21B show an electronic device to which the presentinvention can be applied;

FIG. 22 is a cross-sectional view showing a structural example of an ELdisplay module according to an aspect of the present invention;

FIGS. 23A and 23B each are a cross-sectional view showing a structuralexample of a liquid crystal display module according to an aspect of thepresent invention;

FIG. 24 is a block diagram having a main structure of an electronicdevice to which the present invention can be applied;

FIGS. 25A and 25B show an electronic device to which the presentinvention can be applied;

FIGS. 26A to 26E each show an electronic device to which the presentinvention can be applied;

FIGS. 27A to 27C are top views of display devices to which the presentinvention can be applied;

FIGS. 28A and 28B are top views of display devices to which the presentinvention can be applied;

FIGS. 29A to 29G each show a semiconductor device to which the presentinvention can be applied;

FIGS. 30A and 30B show a backlight which can be applied to the presentinvention;

FIGS. 31A and 31B show a backlight which can be applied to the presentinvention;

FIGS. 32A to 32C show a backlight which can be applied to the presentinvention;

FIGS. 33A and 33B show a backlight which can be applied to the presentinvention;

FIGS. 34A and 34B show a backlight which can be applied to the presentinvention;

FIGS. 35A and 35B show a backlight which can be applied to the presentinvention;

FIG. 36 shows a backlight which can be applied to the present invention;

FIGS. 37A to 37C each show a structure of a light-emitting element whichcan be applied to the present invention;

FIGS. 38A to 38C each show a structure of a light-emitting element whichcan be applied to the present invention; and

FIG. 39 is a cross-sectional view of a display device according to anaspect of the present invention.

DETAILED DESCRIPTION OF THE INVENTION Embodiment Modes

Hereinafter, Embodiment Modes of the present invention will be describedwith reference to the drawings. Note that the present invention can becarried out in many different modes. It is easily understood by thoseskilled in the art that modes and details disclosed herein can bemodified in various ways without departing from the spirit and the scopeof the present invention. Therefore, it should be noted that the presentinvention should not be interpreted as being limited to the descriptionof the embodiment modes given below. Note that like portions or portionshaving a like function are denoted by the same reference numeralsthrough drawings, and therefore, description thereon is omitted.

Embodiment Mode 1

An embodiment mode of the present invention is described with referenceto FIGS. 1A to 1D.

According to the present invention, when an element layer is formed overa substrate, an organic compound layer including a substance having aphotocatalyst function (hereinafter, also a photocatalyst substance) isprovided between the substrate and the element layer. The photocatalystsubstance absorbs light, and thus, the photocatalyst substance isactivated by the light. The activation energy acts on peripheral organiccompound, and as a result, changes and modifies properties of theorganic compound. In other words, by the energy of the activatedphotocatalyst substance (oxidizability), a carbon-hydrogen bond and acarbon-carbon bond of such organic compound are separated, and a part ofthe organic compound becomes carbon dioxide and water, and is degassed.Consequently, the organic compound layer including a photocatalystsubstance becomes rough and is separated (sectioned) to the elementlayer side and the substrate side within the layer. Accordingly, theelement layer can be peeled from the substrate.

According to the present invention, by dispersing a photocatalystsubstance in an organic compound layer, the organic compound isdecomposed (broken) by a photocatalyst function of the photocatalystsubstance and the organic compound layer is made rough, thereby peelingthe element layer from the substrate. Thus, since it is unnecessary toapply a large amount of power to the element layer in order to peel it,there are no problems in that a film is peeled at an interface betweenlayers in the peeling process and the element is broken, andtransferring the element is not conducted in a good shape. In thisspecification, “good shape” indicates a state in which a shape beforepeeling is kept, and damages in appearance such as film peeling orremaining portion are not caused, or a state in which properties beforepeeling is kept without causing reduction in electric characteristics orreliability of the element. Also in this specification, “transfer” meansto peel an element layer formed over a first substrate from the firstsubstrate and to transpose it over a second substrate. In other words,it can also indicate that a place provided with the element layer ismoved to another substrate.

In FIGS. 1A to 1D, an organic compound layer 72 including aphotocatalyst substance is provided between a first substrate 70 and anelement layer 73. As the first substrate 70, an appropriate substratemay be selected, which is suitable for conditions in a manufacturingprocess, in other words, which can withstand a process (such as a heattreatment) in forming a thin film transistor included in the elementlayer 73, or an element such as a display element (light-emittingelement (such as organic EL element or inorganic EL element) or liquidcrystal display element). A photocatalyst substance 71 is included inthe organic compound layer 72. The photocatalyst substance may have anyshape such as a granular shape, a pillar shape, a needle shape or aplate shape, and plural particles of a photocatalyst substance aggregatetogether and form an assembly as a simple body.

Hereinafter, an example of forming the organic compound layer 72including a photocatalyst substance is described. The photocatalystsubstance 71 is dispersed in a solution containing an organic compound.The solution may be stirred such that the photocatalyst substance 71 isevenly dispersed in the solution containing an organic compound. Theviscosity of the solution may be determined as appropriate so as toobtain a desired thickness as a layer, while keeping fluidity. Theorganic compound also has a function of keeping the dispersed state ofthe granular shaped photocatalyst substance and holding the mixture as ashape of a layer.

The solution containing an organic compound in which the photocatalystsubstance 71 is dispersed is attached to the first substrate 70 by a wetprocess such as a printing method, and dried so as to be solidified,thereby forming the organic compound layer 72 including a photocatalystsubstance. The solvent is removed by being evaporated, and the organiccompound and the photocatalyst substance 71 are included in the organiccompound layer 72. The photocatalyst substance 72 is evenly dispersedand fixed due to the organic compound, in the organic compound layer 72including a photocatalyst substance.

As a formation method of the organic compound layer 72 including aphotocatalyst substance, a droplet-discharging method or a printingmethod (such as screen printing or offset printing) capable ofselectively forming the organic compound layer including a photocatalystsubstance, a coating method such as a spin coating method, a dippingmethod, a dispenser method, or the like can be used. There are noparticular limitations on a film thickness of the organic compound layer72 including a photocatalyst substance. Further, in the organic compoundlayer including a photocatalyst substance, the photocatalyst substanceis preferably included at rate of greater than or equal to 10 wt % andless than or equal to 90 wt %, although the photocatalyst substance isincluded at any rate. This rate may be determined as appropriate sinceit is influenced by a photocatalyst function property of thephotocatalyst substance, intensity of light irradiation, or strength ofthe organic compound to be decomposed. In addition, there are noparticular limitations on the shape of the photocatalyst substanceincluded in the organic compound layer. Minute photocatalyst substanceswhich are smaller than the film thickness may be included dispersedly inthe organic compound layer, or granular shaped photocatalyst substanceshaving almost the same size as the film thickness may be covered withthe organic compound and attached, which form a shape of a layer.Moreover, the sizes of the included photocatalyst substances are notnecessarily uniform, and plural photocatalyst substances havingdifferent sizes may be mixed in the organic compound layer.

Through the above described process, the element layer 73 is formed overthe organic compound layer 72 including a photocatalyst substance (FIG.1A).

After that, light 77 is emitted from a light source 76 from thelight-transmitting first substrate 70 side, and the light 77 passesthrough the first substrate 70, thereby irradiating the photocatalystsubstance 71 with light 77.

There are no particular limitations on the used light, and it ispossible to use any one of infrared light, visible light and ultravioletlight or a combination thereof. For example, light emitted from anultraviolet lamp, a black light, a halogen lamp, a metal halide lamp, axenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or ahigh pressure mercury lamp may be used. In such a case, a lamp lightsource may be lightened for a required period of time for irradiation orlight may be emitted a plurality of times for irradiation.

In addition, laser light may also be used as the light. As a laseroscillator, a laser oscillator capable of emitting ultraviolet light,visible light, or infrared light can be used. As the laser oscillator,an excimer laser such as a KrF excimer laser, an ArF excimer laser, aXeCl excimer laser, or a Xe excimer laser; a gas laser such as a Helaser, a He—Cd laser, an Ar laser, a He—Ne laser, or a HF laser; asolid-state laser using a crystal such as YAG, GdVO₄, YVO₄, YLF, orYAlO₃ doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm; or a semiconductorlaser such as a GaN laser, a GaAs laser, a GaAlAs laser, or an InGaAsPlaser can be used. As for the solid-state laser, it is preferable to usethe first to fifth harmonics of the fundamental wave. In order to adjustthe shape or path of laser light emitted from the laser oscillator, anoptical system including a shutter, a reflector such as a mirror or ahalf mirror, a cylindrical lens, a convex lens, or the like may beprovided.

It is to be noted that laser irradiation may be selectively performed bymoving a substrate or may be performed by scanning of the light in theX- and Y-axis directions. In this case, a polygon mirror or agalvanometer mirror is preferably used for the optical system.

In addition, a combination of light emitted from a lamp light source andlaser light can also be used as the light. A region where exposure isperformed for the relatively wide range may be irradiated with the useof a lamp, and only a region where high definition exposure is performedmay be irradiated with laser light. Further, by light irradiationperformed in such a manner, throughput can be improved.

The photocatalyst substance 71 absorbs the light 77, and thephotocatalyst substance is activated by the light 77. The activationenergy acts on the peripheral organic compound included in the organiccompound layer 72 including a photocatalyst substance, and as a result,changes and modifies properties of the organic compounds. In otherwords, by the energy of the activated photocatalyst substance 71(oxidizability), a carbon-hydrogen bond and a carbon-carbon bond of suchorganic compound are separated, and a part of the organic compoundbecomes carbon dioxide and water, and is degassed. Consequently, theorganic compound layer 72 including a photocatalyst substance becomesrough, and thus, it becomes an organic compound layer 75 including aphotocatalyst substance.

A second substrate 78 is provided over the element layer 73 (FIG. 1B).The second substrate may be attached to the element layer 73 by using anadhesive layer or the like, or a protective layer such as a resin layermay be directly formed over the element layer.

When power is applied to the second substrate 78 side so as to transferthe element layer 71, the strength of the organic compound layer 75including a photocatalyst substance decreases, and thus, the organiccompound layer 79 b including a photocatalyst substance on the elementlayer side and the organic compound layer 79 a including a photocatalystsubstance on the substrate side are separated (sectioned) from eachother within the layer. Accordingly, the element layer 71 can be peeledfrom the first substrate 70.

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate.

Accordingly, since elements can be transferred to various types ofsubstrates as appropriate, a material for the substrate can be selectedfrom a wider range of materials. In addition, an inexpensive materialcan be used for the substrate, and a semiconductor device can bemanufactured at low cost, in addition to having various functionssuitable for applications.

The concentration of the photocatalyst substance included in the organiccompound layer may be uniform in the organic compound layer including aphotocatalyst substance, or may have a gradient in a film thicknessdirection. The photocatalyst substance and the organic compound are notnecessarily formed at the same time in the mixed state. Particles of thephotocatalyst substance may be dotted over the substrate first and thenthe organic compound layer may be formed so as to fill a space betweenthe particles. Alternatively, the organic compound layer may be formedfirst, and then, the photocatalyst substance may be introduced into theorganic compound layer (after dispersing on the organic compound layer,it may be diffused into the organic compound layer.). In the presentinvention, the organic compound layer including a photocatalystsubstance may be formed by any process, as long as the photocatalystsubstance and the organic compound are formed as a layer in a mixedstate.

In this specification, “high concentration” indicates that existingprobability or distribution of the photocatalyst substance is high. Thisconcentration can be represented by volume ratio, weight ratio,composition ratio or the like in accordance with the property of thesubstance.

As an example of the mixed state of the photocatalyst substance includedin the organic compound layer, FIGS. 2A to 2D and 3A to 3D show caseswhere the concentration of the photocatalyst substance included in theorganic compound layer has a gradient in the film thickness direction inthe organic compound layer including a photocatalyst substance.

An organic compound layer including a photocatalyst substance shown inFIG. 2A is an example of an organic compound layer including aphotocatalyst substance of the present invention. Over the firstsubstrate 70, an organic compound layer 86 including a region 85 inwhich a photocatalyst substance is mixed is formed, and the elementlayer 73 is formed over the organic compound layer 86. The photocatalystsubstance mixed in the organic compound layer 86 has a concentrationgradient, and the photocatalyst substance exists unevenly in the organiccompound layer 86. The region 85 in which a photocatalyst substance ismixed is included near the interface between the organic compound layer86 and the element layer 73. Thus, the concentration of thephotocatalyst substance included in the organic compound layer 86 ishighest at the interface between the organic compound layer 86 and theelement layer 73. The region 85 in which the photocatalyst substance ismixed can have a structure in which the concentration changes graduallytoward the element layer 73 in the film thickness direction inside theorganic compound layer, without having a clear interface with a regionin which the photocatalyst substance is not mixed.

The photocatalyst substance is irradiated with light from the firstsubstrate 70 side, and the activated energy decomposes the organiccompound so as to form the organic compound layer 88 including aphotocatalyst substance, of which strength decreases. After that, thesecond substrate 78 is attached onto the element layer 73, and theelement layer 73 is peeled from the first substrate 70 (FIGS. 2B to 2D).Since roughening the organic compound layer by the photocatalystsubstance occurs in the region 87 in which the photocatalyst substanceis mixed, an organic compound layer 89 b including a photocatalystsubstance on the element layer side and an organic compound layer 89 aincluding a photocatalyst substance on the substrate side are separated(sectioned) from each other within the layer.

An organic compound layer including a photocatalyst substance shown inFIG. 3A is an example of an organic compound layer including aphotocatalyst substance of the present invention. Over the firstsubstrate 70, an organic compound layer 81 including a region 80 inwhich a photocatalyst substance is mixed is formed, and the elementlayer 73 is formed over the organic compound layer 81. The photocatalystsubstance mixed in the organic compound layer 81 has a concentrationgradient, and the photocatalyst substance exists unevenly in the organiccompound layer 81. The region 80 in which the photocatalyst substance ismixed is included near the interface between the organic compound layer81 and the first substrate 70. Thus, the concentration of thephotocatalyst substance included in the organic compound layer 81 ishighest at the interface between the organic compound layer 81 and thefirst substrate 70. The region 80 in which a photocatalyst substance ismixed can have a structure in which the concentration changes graduallytoward the element layer 73 in the film thickness direction inside theorganic compound layer, without having a clear interface with a regionin which the photocatalyst substance is not mixed.

The photocatalyst substance is irradiated with light from the firstsubstrate 70 side, and the activated energy decomposes the organiccompound so as to form the organic compound layer 83 including aphotocatalyst substance, of which strength decreases. After that, thesecond substrate 78 is attached onto the element layer 73, and theelement layer 73 is peeled from the first substrate 70 (FIGS. 3B to 3D).Since roughening the organic compound layer by the photocatalystsubstance occurs in the region 82 in which the photocatalyst substanceis mixed, an organic compound layer 84 b including a photocatalystsubstance on the element layer side and an organic compound layer 84 aincluding a photocatalyst substance on the substrate side are separated(sectioned) from each other within the layer.

Further, an insulating film may be provided between the organic compoundlayer including a photocatalyst substance and the element layer. InFIGS. 4A to 4D, an insulating layer 90 is provided between the organiccompound layer 72 including a photocatalyst substance and the elementlayer 73. The insulating layer 90 can prevent contamination of theelement layer due to impurities or the like, and further, if a materialwhich can absorb or reflect light used for exposure is used for theinsulating layer 90, the insulating layer 90 can block light emitted tothe organic compound layer 72 including a photocatalyst substance. Inaddition, after peeling the element layer 73 from the first substrate70, the insulating layer 90 can be used as a substrate for supportingand sealing the element layer 73.

The photocatalyst substance which can be used in the present inventionis preferably titanium oxide (TiO₂), strontium titanate (SrTiO₃),cadmium selenide (CdSe), potassium tantalate (KTaO₃), cadmium sulfide(CdS), zirconium oxide (ZrO₂), niobium oxide (Nb₂O₅), zinc oxide (ZnO),iron oxide (Fe₂O₃), tungsten oxide (WO₃), or the like. Photocatalyticactivity can be generated by irradiating the photocatalyst substancewith light of an ultraviolet light region (having a wavelength of 400 nmor less, preferably, 380 nm or less).

A photocatalyst substance including an oxide semiconductor containing aplurality of metals can be formed by mixing and melting salts ofconstituting elements. When a solvent needs to be removed, baking and/ordrying may be performed. Specifically, heating may be performed at apredetermined temperature (for example, 300° C. or more), and preferablyperformed in an atmosphere containing oxygen.

With this heat treatment, the photocatalyst substance can have apredetermined crystal structure. For example, as for titanium oxide(TiO₂), the photocatalyst substance is of an anatase type or arutile-anatase mixed type, and an anatase type is preferentially formedin a low-temperature phase. Therefore, the photocatalyst substance maybe heated also if it does not have a predetermined crystal structure.

Photocatalytic activity can be improved by further doping thephotocatalyst substance with transition metal (such as Pd, Pt, Cr, Ni,V, Mn, Fe, Ce, Mo, or W), or photocatalytic activity can be generated bylight of a visible light region (having a wavelength of 400 nm to 800nm). This is because transition metal can form a new level in aforbidden band of an active photocatalyst having a wide band gap, andcan expand a light absorption range to a visible light region. Forexample, an acceptor type such as Cr or Ni, a donor type such as V orMn, an amphoteric type such as Fe, or Ce, Mo, W, or the like can be usedfor doping. Since a wavelength of light can be determined by thephotocatalyst substance as described above, light irradiation meansirradiation of light having such a wavelength as to activate thephotocatalyst substance.

In addition, when the photocatalyst substance is heated and reduced invacuum or under hydrogen reflux, an oxygen defect is generated in acrystal. Without doping with a transition element in such a way, theoxygen defect can play a role equivalent to an electron donor. Inparticular, in the case of employing a sol-gel method, since an oxygendefect originally exists, reduction is not necessarily performed. Byperforming doping with a gas of N₂ or the like, an oxygen defect can beformed.

As an organic compound that can be used in the present invention, anorganic material, or a mixed material of an organic material and aninorganic material can be used. As an organic material, a resin can beused, such as a cyanoethyl cellulose based resin, polyethylene,polypropylene, a polystyrene based resin, a silicone resin, an epoxyresin, vinylidene fluoride, or the like. In addition, a heat-resistanthigh-molecular material such as aromatic polyamide or polybenzimidazole,or a siloxane resin may also be used. The siloxane resin is a resinincluding a Si—O—Si bond. Siloxane has a skeleton structure formed of abond of silicon (Si) and oxygen (O). As a substituent, an organic groupcontaining at least hydrogen (for example, an alkyl group or aromatichydrocarbon) is used. Alternatively, a fluoro group may be used as asubstituent. In addition, as a substituent, both a fluoro group and anorganic group containing at least hydrogen may also be used. Further, aresin material may also be used, such as a vinyl resin such as polyvinylalcohol or polyvinylbutyral, a phenol resin, a novolac resin, an acrylicresin, a melamine resin, a urethane resin, an oxazole resin(polybenzoxazole), or the like.

As an inorganic material contained in the organic compound, a materialof silicon oxide, silicon nitride, silicon oxynitride, silicon nitrideoxide, aluminum nitride (AlN), aluminum oxynitride (AlON), aluminumnitride oxide (AlNO), aluminum oxide, titanium oxide (TiO₂), BaTiO₃,SrTiO₃, PbTiO₃, KNbO₃, PbNbO₃, Ta₂O₃, BaTa₂O₆, LiTaO₃, Y₂O₃, Al₂O₃,ZrO₂, or ZnS, or other substances containing an inorganic material canbe used.

As the solvent for the solution containing an organic compound that canbe used in the present invention, a solvent capable of forming asolution having such viscosity, that can dissolve an organic compoundmaterial and which is suitable for a method for forming an organiccompound layer (various types of wet processes) and a desired filmthickness, may be appropriately selected. An organic solvent or the likecan also be used, and when, for example, a siloxane resin is used as anorganic compound, propylene glycol monomethyl ether, propylene glycolmonomethyl ether acetate (also referred to as PGMEA),3-methoxy-3-methyl-1-butanol (also referred to as MMB), or the like canbe used.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling, are kept. Therefore, more highly reliablesemiconductor devices can be manufactured with high yield withoutcomplicating the apparatus and the process for manufacturing.

Embodiment Mode 2

Embodiment Mode 2 will explain one structural example of a displaydevice to which a transfer process of the present invention is applied,with reference to drawings. More specifically, a case where a structureof a display device is a passive matrix type will be shown.

The display device includes first electrode layers 751 a, 751 b, and 751c extending in a first direction; an electroluminescent layer 752provided to cover the first electrode layers 751 a, 751 b, and 751 c;and second electrode layers 753 a, 753 b, and 753 c extending in asecond direction perpendicular to the first direction (FIG. 5A). Theelectroluminescent layer 752 is provided between the first electrodelayers 751 a, 751 b, and 751 c and the second electrode layers 753 a,753 b, and 753 c. In addition, an insulating layer 754 functioning as aprotection film is provided so as to cover the second electrode layers753 a, 753 b, and 753 c. The element layer including the first electrodelayers 751 a, 751 b and 751 c, the second electrode layers 753 a, 753 band 753 c, the electroluminescent layer 752, and the insulating layer754 is provided so as to be in contact with the substrate 758 (FIG. 5B).When an influence of an electric field in a lateral direction isconcerned between adjacent light emitting elements, theelectroluminescent layer 752 provided in each light-emitting element maybe separated.

FIG. 5C is a deformed example of FIG. 5B. The element layer includingfirst electrode layers 791 a, 791 b, and 791 c, an electroluminescentlayer 792, a second electrode layer 793 b, and an insulating layer 794which is a protective layer is provided so as to be in contact with thesubstrate 798. The first electrode layer may have a tapered shape likethe first electrode layers 791 a, 791 b, and 791 c in FIG. 5C, or ashape in which radius of curvature changes continuously. The shape likethe first electrode layers 791 a, 791 b, and 791 c can be formed withthe use of a droplet-discharging method or the like. With such a curvedsurface having a curvature, coverage of an insulating layer orconductive layer to be stacked thereover is favorable.

In addition, a partition wall (insulating layer) may be formed to coveran end portion of the first electrode layer. The partition wall(insulating layer) serves as a wall separating a light-emitting elementfrom another light-emitting element. FIGS. 8A and 8B each show astructure in which the end portion of the first electrode layer iscovered with the partition wall (insulating layer).

In an example of a light-emitting element shown in FIG. 8A, a partitionwall (insulating layer) 775 is formed to have a tapered shape to coverend portions of first electrode layers 771 a, 771 b, and 771 c. Theelement layer including the first electrode layers 771 a, 771 b, and 771c, the partition wall (insulating layer) 775, an electroluminescentlayer 772, a second electrode layer 773 b, an insulating layer 774, andan insulating layer 776 are provided so as to be in contact with thesubstrate 778.

An example of a light-emitting element shown in FIG. 8B has a shape inwhich a partition wall (insulating layer) 765 has a curvature, andradius of the curvature changes continuously. The element layerincluding first electrode layers 761 a, 761 b, and 761 c, anelectroluminescent layer 762, a second electrode layer 763 b, and aninsulating layer 764 are provided so as to be in contact with thesubstrate 768.

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate. The remaining layers on the element layer side afterpeeling the organic compound layer including a photocatalyst substanceare the organic compound layers 759 b, 769 b, 779 b and 799 b includinga photocatalyst substance.

Accordingly, since elements can be transferred to various types ofsubstrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used fora substrate, and a semiconductor device can be manufactured at low cost,in addition to having various functions suitable for applications.

FIGS. 6A to 6D show a manufacturing process of the display device shownin FIGS. 5A and 5B. In FIG. 6A, an organic compound layer 756 includinga photocatalyst substance is provided between the first substrate 750and the first electrodes 751 a, 751 b and 751 c. As the first substrate750, an appropriate substrate may be selected, which is suitable forconditions in a manufacturing process, in other words, which canwithstand a process (such as a heat treatment) in forming a displayelement included in the element layer. A photocatalyst substance isincluded in the organic compound layer 756.

After that, the photocatalyst substance is irradiated with light 781which is emitted from a light source 780 and passes through the firstsubstrate 750, from the light-transmitting first substrate 750 side(FIG. 6B).

The photocatalyst substance absorbs the light 781, and thus, thephotocatalyst substance is activated by the light 781. The activationenergy acts on the peripheral organic compound included in the organiccompound layer 756 including a photocatalyst substance, and as a result,changes and modifies properties of the organic compound. In other words,by the energy of the activated photocatalyst substance (oxidizability),a carbon-hydrogen bond and a carbon-carbon bond of such organic compoundare separated, and a part of the organic compound becomes carbon dioxideand water, and is degassed. Consequently, the organic compound layer 756including a photocatalyst substance becomes rough, so that it becomes anorganic compound layer 757 including a photocatalyst substance.

A second substrate 758 is provided over the insulating film 754 of anelement layer including a light-emitting element 785 (FIG. 6C). Thesecond substrate 758 may be attached to the element layer by using anadhesive or the like, or a protective layer such as a resin layer may bedirectly formed over the element layer.

When power is applied to the second substrate 758 side so as to transferthe element layer including a light-emitting element 785, the strengthof the organic compound layer 757 including a photocatalyst substancedecreases, and thus, the organic compound layer 759 b including aphotocatalyst substance on the element layer side and the organiccompound layer 759 a including a photocatalyst substance on thesubstrate side are separated (sectioned) from each other within thelayer. Accordingly, the element layer including a light-emitting layer785 can be peeled from the first substrate 750.

FIGS. 7A to 7D shows a manufacturing process of a passive matrix typeliquid crystal display device to which the present invention is applied.In FIG. 7A, a first substrate 1700 and a second substrate 1710 face toeach other with a liquid crystal layer 1703 interposed therebetween, inwhich an organic compound layer 1707 including a photocatalystsubstance, the first pixel electrode layers 1701 a, 1701 b, 1701 c, andan insulating layer 1712 serving as an alignment film are provided forthe first substrate 1700, and an insulating layer 1704 serving as analignment film, a counter electrode 1705, and a colored layer 1706serving as a color filter are provided for the second substrate 1710.Between the first substrate 1700 and the first pixel electrodes 1701 a,1701 b, 1701 c, the organic compound layer 1707 including aphotocatalyst substance is provided. As the first substrate 1700, anappropriate substrate may be selected, which is suitable for conditionsin a manufacturing process, in other words, which can withstand aprocess (such as a heat treatment) in forming a liquid crystal displayelement 1713 included in the element layer. A photocatalyst substance isincluded in the organic compound layer 1707.

After that, the photocatalyst substance is irradiated with light 781which is emitted from a light source 780 and passes through the firstsubstrate 1700, from the light-transmitting first substrate 1700 side(FIG. 6B).

The photocatalyst substance absorbs the light 781, and thus, thephotocatalyst substance is activated by the light 781. The activationenergy acts on the peripheral organic compound included in the organiccompound layer 1707 including a photocatalyst substance, and as aresult, changes and modifies properties of the organic compound. Inother words, by the energy of the activated photocatalyst substance(oxidizability), a carbon-hydrogen bond and a carbon-carbon bond of suchorganic compound are separated, and a part of the organic compoundbecomes carbon dioxide and water, and is degassed. Consequently, theorganic compound layer 1707 including a photocatalyst substance becomesrough, so that it becomes the organic compound layer 1708 including aphotocatalyst substance.

When power is applied to the second substrate 1710 side so as totransfer the element layer including the liquid crystal display element1713, the strength of the organic compound layer 1708 including aphotocatalyst substance decreases, and thus, the organic compound layer1709 b including a photocatalyst substance on the element layer side andthe organic compound layer 1709 a including a photocatalyst substance onthe substrate side are separated (sectioned) from each other within thelayer. Accordingly, the element layer including the liquid crystaldisplay element 1713 can be peeled from the first substrate 1700.

After peeling the element layer including the liquid crystal displayelement 1713 from the first substrate 1700, a third substrate 1711 isattached to the organic compound layer 1709 a side including aphotocatalyst substance of the element layer (FIG. 7D). The attachedthird substrate 1711 may be formed from a material which can block lightin a wavelength which activates the photocatalyst substance left in theelement layer.

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process, and an element withgood shape can be transferred to various types of substrates asappropriate.

Accordingly, since elements can be transferred to various types ofsubstrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used fora substrate, and a semiconductor device can be manufactured at low cost,in addition to having various functions suitable for applications.

The substrates 758, 766, 768 and 798 can be glass substrates, flexiblesubstrates, quartz substrates, or the like. The flexible substrate is asubstrate that can be bent, such as a plastic substrate formed frompolycarbonate, polyarylate, polyether sulfone, or the like. In addition,a film (formed using polypropylene, polyester, vinyl, polyvinylfluoride, vinyl chloride, or the like), paper of a fibrous material, abase film (polyester, polyamide, an evaporated inorganic film, paper orthe like), or the like can be used.

The first electrode layer, the second electrode layer, and theelectroluminescent layer shown in this embodiment mode can be formed byusing any of the materials and the methods described in other embodimentmodes.

As the partition walls (insulating layers) 765 and 775, silicon oxide,silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride,aluminum oxynitride, or other inorganic insulating materials; acrylicacid, methacrylic acid, or a derivative thereof; a heat-resistant highmolecular material such as polyimide, aromatic polyamide, orpolybenzimidazole; or a siloxane resin may be used. Alternatively, thefollowing resin material can be used: a vinyl resin such as polyvinylalcohol or polyvinylbutyral, an epoxy resin, a phenol resin, a novolacresin, an acrylic resin, a melamine resin, a urethane resin, or thelike. Further, an organic material such as benzocyclobutene, parylene,fluorinated arylene ether, or polyimide; a composition materialcontaining a water-soluble homopolymer and a water-soluble copolymer; orthe like may be used. As a formation method, a vapor phase growth methodsuch as a plasma CVD method or a thermal CVD method, or a sputteringmethod can be used. A droplet-discharging method or a printing method (amethod for forming a pattern, such as screen printing or offsetprinting) can also be used. An organic film or an inorganic film (a SOGfilm, or the like) obtained by a coating method or the like can also beused.

After a conductive layer, an insulating layer, or the like is formed bydischarging a composition by a droplet-discharging method, a surfacethereof may be planarized by pressing with pressure to enhanceplanarity. As a pressing method, concavity and convexity of the surfacemay be reduced by scanning the surface by a roller-shaped object, or thesurface may be pressed perpendicularly by a flat plate-shaped object. Aheating treatment may also be performed at the time of pressing.Alternatively, the concavity and convexity of the surface may be removedwith an air knife after the surface is softened or melted with a solventor the like. A CMP method may also be used for polishing the surface.This process can be employed in planarizing of the surface whenconcavity and convexity are generated by a droplet-discharging method.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling is kept. Therefore, highly reliablesemiconductor devices can be manufactured with high yield withoutcomplicating the apparatus and the process for manufacturing.

Embodiment Mode 3

Embodiment Mode 3 will describe a semiconductor device having atransistor which is formed by a transfer process of the presentinvention.

In FIGS. 9A to 9C, between a light-transmitting insulating layer 512provided over a light-transmitting substrate 500, and an element layerincluding transistors 510 a and 510 b, an organic compound layer 516including a photocatalyst substance is provided. As the first substrate500 and the insulating layer 512, appropriate materials may be selected,which is suitable for conditions in a manufacturing process, in otherwords, which can withstand a process (such as a heat treatment) informing a display element included in the element layer. A photocatalystsubstance is included in the organic compound layer 516.

After that, the photocatalyst substance is irradiated with light 581emitted from a light source 580 from the light-transmitting firstsubstrate 500 side, passing through the first substrate 500 and theinsulating layer 512 (FIG. 9B).

The photocatalyst substance absorbs the light 581, and thus, thephotocatalyst substance is activated by the light 581. The activationenergy acts on the peripheral organic compound included in the organiccompound layer 516 including a photocatalyst substance, and as a result,changes and modifies properties of the organic compound. In other words,by the energy of the activated photocatalyst substance (oxidizability),a carbon-hydrogen bond and a carbon-carbon bond of such organic compoundare separated, and a part of the organic compound becomes carbon dioxideand water, and is degassed. Consequently, the organic compound layer 516including a photocatalyst substance becomes rough, so that it becomesthe organic compound layer 517 including a photocatalyst substance.

A second substrate 518 is provided over the insulating film 509 and theinsulating layer 511 of the element layer including the transistors 510a and 510 b (FIG. 9C). The second substrate 518 may be attached to theelement layer by using an adhesive or the like, or a protective layersuch as a resin layer may be directly formed over the element layer.

When power is applied to the second substrate 518 side so as to transferthe element layer including the transistors 510 a and 510 b, thestrength of the organic compound layer 517 including a photocatalystsubstance decreases, and thus, the organic compound layer 519 bincluding a photocatalyst substance on the element layer side and theorganic compound layer 519 a including a photocatalyst substance on thesubstrate side are separated (sectioned) from each other within thelayer. Accordingly, the element layer including the transistors 510 aand 510 b can be peeled from the first substrate 500.

FIGS. 9A to 9C show an example in which the transistors 510 a and 510 bare channel etch type reverse staggered transistors. In FIGS. 9A to 9C,the transistors 510 a and 510 b include gate electrode layers 502 a, 502b, a gate insulating layer 508, semiconductor layers 504 a, 504 b,semiconductor layers 503 a, 503 b, 503 c, 503 d having one conductivity,and wiring layers 505 a, 505 b, 505 c, 505 d serving as source or drainelectrode layers.

A material for forming the semiconductor layer can be an amorphoussemiconductor (hereinafter also referred to as “AS”) formed by a vaporphase growth method or a sputtering method using a semiconductormaterial gas typified by silane or germane, a polycrystallinesemiconductor formed by crystallizing the amorphous semiconductor usinglight energy or thermal energy, a semi-amorphous semiconductor (alsoreferred to as microcrystal and hereinafter also referred to as “SAS”),or the like.

SAS is a semiconductor having an intermediate structure betweenamorphous and crystalline (including single crystal and polycrystalline)structures and a third state which is stable in free energy. Moreover,SAS includes a crystalline region with a short range order and latticedistortion. SAS is formed by glow discharge decomposition (plasma CVD)of a gas containing silicon. As the gas containing silicon, SiH₄ can beused, and in addition, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄ or the likecan also be used. Further, F₂ and GeF₄ may be mixed. The gas containingsilicon may be diluted with H₂, or H₂ and one or a plurality of rare gaselements of He, Ar, Kr, and Ne. A rare element such as helium, argon,krypton, or neon is made to be contained to promote lattice distortion,thereby favorable SAS with increased stability can be obtained. An SASlayer formed by using a hydrogen based gas may be stacked over an SASlayer formed by using a fluorine based gas as the semiconductor film.

Hydrogenated amorphous silicon may be typically given as an example ofan amorphous semiconductor, while polysilicon and the like may betypically given as an example of a crystalline semiconductor.Polysilicon (polycrystalline silicon) includes so-calledhigh-temperature polysilicon formed using polysilicon as a mainmaterial, which is formed at processing temperatures of 800° C. orhigher; so-called low-temperature polysilicon formed using polysiliconas a main material, which is formed at processing temperatures of 600°C. or lower; polysilicon crystallized by addition of an element whichpromotes crystallization; and the like. It is needless to say that asemi-amorphous semiconductor or a semiconductor containing a crystalphase in part thereof may also be used as described above.

In the case where a crystalline semiconductor film is used for thesemiconductor film, the crystalline semiconductor film may be formed bya known method such as a laser crystallization method, a thermalcrystallization method, and a thermal crystallization method using anelement such as nickel which promotes crystallization. Further, amicrocrystalline semiconductor that is SAS may be crystallized by laserirradiation, for enhancing crystallinity. In the case where an elementwhich promotes crystallization is not used, before irradiating theamorphous semiconductor film with a laser beam, the amorphoussemiconductor film is heated at 500° C. for one hour in a nitrogenatmosphere to discharge hydrogen so that the hydrogen concentration inthe amorphous semiconductor film is less than or equal to 1×10²⁰atoms/cm³. This is because, if the amorphous semiconductor film containsmuch hydrogen, the amorphous semiconductor film may be broken by laserbeam irradiation. A heat treatment for crystallization may be performedwith the use of a heating furnace, laser irradiation, irradiation withlight emitted from a lamp (also referred to as a lamp annealing), or thelike. As a heating method, an RTA method such as a GRTA (Gas RapidThermal Anneal) method or an LRTA (Lamp Rapid Thermal Anneal) method maybe used. A GRTA method is a method in which a heat treatment isperformed by a high-temperature gas whereas an LRTA method is a methodin which a heat treatment is performed by light emitted from a lamp.

In a crystallization process in which an amorphous semiconductor layeris crystallized to form a crystalline semiconductor layer, an elementwhich promotes crystallization (also referred to as a catalytic elementor a metal element) may be added to an amorphous semiconductor layer,and crystallization may be performed by a heat treatment (at 550 to 750°C. for 3 minutes to 24 hours). As a metal element which promotescrystallization of silicon, one or a plurality of kinds of metal such asiron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh),palladium (Pd), osmium (Os), iridium (Ir), platinum (Pt), copper (Cu),and gold (Au) can be used.

A method for introducing a metal element into the amorphoussemiconductor film is not particularly limited as long as it is a methodwhich can make the metal element exist on the surface of or inside ofthe amorphous semiconductor film. For example, a sputtering method, aCVD method, a plasma treatment method (also including a plasma CVDmethod), an adsorption method, or a method of applying a solution ofmetal salt can be used. Among them, a method using a solution is simpleand advantageous in that the concentration of the metal element can beeasily controlled. At this time, it is preferable to form an oxide filmby UV light irradiation in an oxygen atmosphere, a thermal oxidationmethod, a treatment with ozone water containing hydroxyl radical orhydrogen peroxide, or the like so that wettability of the surface of theamorphous semiconductor film is improved, and an aqueous solution isdiffused over the entire surface of the amorphous semiconductor film.

In order to remove or reduce the element which promotes crystallizationfrom the crystalline semiconductor layer, a semiconductor layercontaining an impurity element is formed to be in contact with thecrystalline semiconductor layer and is made to function as a getteringsink. As the impurity element, an impurity element imparting n-type, animpurity element imparting p-type, a rare gas element, or the like canbe used. For example, one or a plurality of kinds of elements such asphosphorus (P), nitrogen (N), arsenic (As), antimony (Sb), bismuth (Bi),boron (B), helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon(Xe) can be used. A semiconductor layer containing a rare gas element isformed over the crystalline semiconductor layer containing the elementwhich promotes crystallization, and a heat treatment (at temperatures of550 to 750° C. for 3 minutes to 24 hours) is performed. The elementwhich promotes crystallization contained in the crystallinesemiconductor layer moves into the semiconductor layer containing a raregas element, and the element which promotes crystallization contained inthe crystalline semiconductor layer is removed or reduced. After that,the semiconductor layer containing a rare gas element functioning as thegettering sink is removed.

By scanning a laser beam and the semiconductor film relatively, laserirradiation can be performed. Further, in the laser beam irradiation, amarker can be formed to overlap beams with high precision or controlpositions for starting and finishing laser beam irradiation. The markermay be formed over the substrate at the same time as the amorphoussemiconductor film is formed.

In the case of laser beam irradiation, a continuous wave oscillationtype laser beam (a CW laser beam) or a pulsed oscillation type laserbeam (a pulsed laser beam) can be used. As a laser beam that can be usedhere, a laser beam emitted from one or a plurality of kinds of a gaslaser such as an Ar laser, a Kr laser, or an excimer laser; a laserusing, as a medium, single crystal YAG, YVO₄, forsterite (Mg₂SiO₄),YAlO₃, or GdVO₄, or polycrystal (ceramic) YAG, Y₂O₃, YVO₄, YAlO₃, orGdVO₄ doped with one or a plurality of kinds of Nd, Yb, Cr, Ti, Ho, Er,Tm, and Ta as a dopant; a glass laser; a ruby laser; an alexandritelaser; a Ti: sapphire laser; a copper vapor laser; and a gold vaporlaser can be used. By irradiation with the fundamental wave of such alaser beam or the second harmonic to fourth harmonic laser beam of thefundamental wave, a large grain crystal can be obtained. For example,the second harmonic (532 nm) or the third harmonic (355 nm) of anNd:YVO₄ laser beam (the fundamental wave: 1064 nm) can be used. As foran Nd:YVO₄ laser, either continuous wave oscillation or pulsedoscillation can be performed. In the case of continuous waveoscillation, the power density of the laser beam needs to beapproximately 0.01 to 100 MW/cm² (preferably 0.1 to 10 MW/cm²). Then,irradiation is carried out at a scanning rate of approximately 10 to2000 cm/sec.

Further, a laser using, as a medium, single crystal YAC, YVO₄,forsterite (Mg₂SiO₄), YAlO₃, or GdVO₄, or polycrystal (ceramic) YAG,Y₂O₃, YVO₄, YAlO₃, or GdVO₄ doped with one or a plurality of kinds ofNd, Yb, Cr, Ti, Ho, Er, Tm and Ta as a dopant; an Ar ion laser; or a Ti:sapphire laser can perform continuous wave oscillation. In addition,pulse oscillation at a repetition rate of greater than or equal to 10MHz is also possible by Q-switch operation, mode locking, or the like.Through pulse oscillation of a laser beam at a repetition rate ofgreater than or equal to 10 MHz, the semiconductor film is irradiatedwith the next pulse after the semiconductor film is melted by a laserbeam and before the film is solidified. Accordingly, differing from thecase where a pulsed laser at a lower repetition rate is used, thesolid-liquid interface can be continuously moved in the semiconductorfilm, and a crystal grain grown continuously in the scanning directioncan be obtained.

The use of ceramics (polycrystal) as a medium allows the medium to beformed into a free shape at low cost in a short time. Although acylindrical columnar medium of several mm in diameter and several tensof mm in length is usually used in the case of single crystal, largermedia can be formed in the case of ceramics.

Since the concentration of the dopant such as Nd or Yb in the medium,which directly contributes to light emission, is difficult to be changedsignificantly both in single crystal and polycrystal, improvement inlaser beam output by increasing the concentration of the dopant has acertain level of limitation. However, in the case of ceramics, drasticimprovement in output can be expected because the size of the medium canbe significantly increased compared with the case of single crystal.

Further, in the case of ceramics, a medium having a parallelepiped shapeor a rectangular parallelepiped shape can be easily formed. When amedium having such a shape is used and oscillation light goes in zigzagin the medium, an oscillation light path can be longer. Accordingly,amplification is increased and oscillation with high output is possible.Since a laser beam emitted from the medium having such a shape has across section of a quadrangular shape when being emitted, a linear beamcan be easily shaped compared with the case of a circular beam. Thelaser beam emitted in such a manner is shaped by using an opticalsystem; accordingly, a linear beam having a short side of less than orequal to 1 mm and a long side of several mm to several m can be easilyobtained. In addition, by uniformly irradiating the medium with excitedlight, a linear beam has a uniform energy distribution in a long sidedirection. Further, the semiconductor film may be irradiated with alaser beam at an incident angle θ(0<θ<90°) with respect to thesemiconductor film, thereby an interference of the laser beam can beprevented.

By irradiation of the semiconductor film with this linear beam, theentire surface of the semiconductor film can be annealed more uniformly.In the case where uniform annealing is required from one end to theother end of the linear beam, slits may be provided for the both ends soas to shield a portion where energy is attenuated.

When the thus obtained linear beam with uniform intensity is used toanneal the semiconductor film and this semiconductor film is used tomanufacture a display device, the display device has favorable anduniform characteristics.

The semiconductor film may be irradiated with a laser beam in an inertgas atmosphere such as a rare gas or nitrogen as well. Accordingly,roughness of the surface of the semiconductor film can be prevented bylaser irradiation, and variation of threshold voltage due to variationof interface state density can be prevented.

The amorphous semiconductor film may be crystallized by a combination ofa heat treatment and laser beam irradiation, or either of a heattreatment or laser beam irradiation may be performed a plurality oftimes.

The gate electrode layer can be formed by a sputtering method, anevaporation method, a CVD method, or the like. The gate electrode layermay be formed using an element such as tantalum (Ta), tungsten (W),titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium(Cr), or neodymium (Nd), or an alloy material or a compound materialcontaining these elements as its main component. Further, as the gateelectrode layer, a semiconductor film typified by a polycrystallinesilicon film doped with an impurity element such as phosphorus can beused, or AgPdCu alloy may be used. In addition, the gate electrode layermay be a single layer or a stacked layer.

In this embodiment mode, the gate electrode layer is formed to have atapered shape; however, the present invention is not limited thereto.The gate electrode layer may have a stacked layer structure, where onlyone layer has a tapered shape while the other(s) may have aperpendicular side surface by anisotropic etching. The taper angles maybe different or equal among the stacked gate electrode layers. With thetapered shape, coverage of a film to be stacked thereover is improvedand defects are reduced, whereby reliability is enhanced.

In order to form the source electrode layer or the drain electrodelayer, a conductive film is formed by a PVD method, a CVD method, anevaporation method, or the like, and the conductive film is etched intoa desired shape. Further, the conductive film can be selectively formedin a predetermined position by a droplet-discharging method, a printingmethod, a dispenser method, an electrolytic plating method, or the like.A reflow method or a damascene method may also be used. The sourceelectrode layer or the drain electrode layer is formed using an elementsuch as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti,Si, Ge, Zr, or Ba, or alloy or metal nitride thereof. In addition, astacked layer structure of these materials may also be used.

As the insulating layers 512, 511, 509, silicon oxide, silicon nitride,silicon oxynitride, aluminum oxide, aluminum nitride, aluminumoxynitride, or other inorganic insulating materials; acrylic acid,methacrylic acid, or a derivative thereof; a heat-resistant highmolecular material such as polyimide, aromatic polyamide, orpolybenzimidazole; or a siloxane resin may be used. Alternatively, thefollowing resin material can be used: a vinyl resin such as polyvinylalcohol or polyvinylbutyral, an epoxy resin, a phenol resin, a novolacresin, an acrylic resin, a melamine resin, a urethane resin, or thelike. Further, an organic material such as benzocyclobutene, parylene,fluorinated arylene ether, or polyimide; a composition materialcontaining a water-soluble homopolymer and a water-soluble copolymer; orthe like may be used. As a formation method, a vapor phase growth methodsuch as a plasma CVD method or a thermal CVD method, or a sputteringmethod can be used. A droplet-discharging method or a printing method (amethod for forming a pattern, such as screen printing or offsetprinting) can also be used. An organic film or an inorganic film (a SOGfilm, or the like) obtained by a coating method or the like can also beused.

After a conductive layer, an insulating layer, or the like is formed bydischarging a composition by a droplet-discharging method, a surfacethereof may be planarized by pressing with pressure to enhanceplanarity. As a pressing method, concavity and convexity of the surfacemay be reduced by scanning the surface with a roller-shaped object, orthe surface may be pressed with a flat plate-shaped object. A heattreatment may also be performed at the time of pressing. Alternatively,the concavity and convexity of the surface may be removed with an airknife after the surface is softened or melted with a solvent or thelike. A CMP method may also be used for polishing the surface. Thisprocess can be employed in planarizing a surface when concavity andconvexity are generated by a droplet-discharging method.

The structure of the thin film transistor in the pixel portion is notlimited to this embodiment mode, and a single gate structure in whichone channel formation region is formed, a double gate structure in whichtwo channel formation regions are formed, or a triple gate structure inwhich three channel formation regions are formed may be employed.Further, the thin film transistor in the peripheral driver circuitregion may also employ a single gate structure, a double gate structure,or a triple gate structure.

The present invention is not limited to the method for manufacturing thethin film transistor shown in this embodiment mode, and can also beapplied to a top gate type (a coplanar type, and a staggered type), abottom gate type (a reverse coplanar type), or a dual gate type havingtwo gate electrode layers which are disposed above and below a channelformation region with the gate insulating film interposed therebetween,or other structure.

Although this embodiment mode exemplifies the example in which a countersubstrate having flexibility (also referred to as a flexible countersubstrate) is attached after the photocatalyst substance is irradiatedwith light, the photocatalyst substance may be irradiated with lightafter attaching the substrate to be transferred to the element layer.

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate.

Accordingly, since elements can be freely transferred to various typesof substrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used fora substrate, and a semiconductor device can be manufactured at low cost,in addition to having various functions suitable for applications.

Embodiment Mode 4

Embodiment Mode 4 will describe a display device having a structuredifferent from that in Embodiment Mode 2. Specifically, a structure ofan active matrix type display device is shown.

FIG. 10A shows a top view of the display device, and FIG. 10B shows across-sectional view taken along a line E-F in FIG. 10A. In addition, inFIG. 10A, an electroluminescent layer 532, a second electrode layer 533,and an insulating layer 534 are omitted and not illustrated, butprovided as shown in FIG. 10B.

A first wiring extending in a first direction and a second wiringextending in a second direction perpendicular to the first direction areprovided in a matrix. The first wiring is connected to a sourceelectrode or a drain electrode of a transistor 521, and the secondwiring is connected to a gate electrode of the transistor 521. A firstelectrode layer 531 is connected to the source electrode or the drainelectrode of the transistor 521, which is not connected to the firstwiring. Light-emitting element 530 is provided by a stacked structure ofthe first electrode layer 531, the electroluminescent layer 532, and thesecond electrode layer 533. A partition wall (insulating layer) 528 isprovided between adjacent light-emitting elements. Over the firstelectrode layer and the partition wall (insulating layer) 528, theelectroluminescent layer 532 and the second electrode layer 533 arestacked. An insulating layer 534 that is a protective layer is providedover the second electrode layer 533. In addition, the reverse staggeredtype thin film transistor shown in FIGS. 9A to 9C is used for thetransistor 521 (FIGS. 10B and 11A).

In the display device shown in FIG. 10B, the element layer is providedover a third substrate 540 with the organic compound layer 539 binterposed therebetween, and includes insulating layers 523, 526, 527,528 ad a transistor 521.

FIGS. 11A to 11C show a manufacturing process of a display device shownin FIGS. 10A and 10B. In FIGS. 1A to 11C, an organic compound layer 524including a photocatalyst substance is provided between a firstsubstrate 520 and an element layer including a transistor 521 and alight-emitting element 530. As the first substrate 520, an appropriatesubstrate may be selected, which is suitable for conditions in amanufacturing process, in other words, which can withstand a process(such as a heat treatment) in forming a display element included in theelement layer. A photocatalyst substance is included in the organiccompound layer 524.

After that, the photocatalyst substance is irradiated with light 581emitted from a light source 580 from the light-transmitting firstsubstrate 520 side, passing through the first substrate 520 (FIG. 11B).

The photocatalyst substance absorbs the light 581, and thus, thephotocatalyst substance is activated by the light 581. The activationenergy acts on the peripheral organic compound included in the organiccompound layer 524 including a photocatalyst substance, and as a result,changes and modifies properties of the organic compound. In other words,by the energy of the activated photocatalyst substance (oxidizability),a carbon-hydrogen bond and a carbon-carbon bond of such organic compoundare separated, and a part of the organic compound becomes carbon dioxideand water, and is degassed. Consequently, the organic compound layer 524including a photocatalyst substance becomes rough, so that it becomesthe organic compound layer 537 including a photocatalyst substance.

A second substrate 538 is provided over the insulating film 534 of theelement layer including the transistor 521 and the light-emittingelement 530 (FIG. 11C). The second substrate 538 may be attached to theelement layer by using an adhesive or the like, or a protective layersuch as a resin layer may be directly formed over the element layer.

When power is applied to the second substrate 538 side so as to transferthe element layer including the transistor 521 and the light-emittingelement 530, the strength of the organic compound layer 537 including aphotocatalyst substance decreases, and thus, the organic compound layer539 b including a photocatalyst substance on the element layer side andthe organic compound layer 539 a including a photocatalyst substance onthe substrate side are separated (sectioned) from each other within thelayer. Accordingly, the element layer including the transistor 521 andthe light-emitting element 530 can be peeled from the first substrate520.

FIGS. 12A to 12C show a manufacturing process of an active matrix typeliquid crystal display device to which the present invention is applied.In FIGS. 12A to 12C, a first substrate 550 and a second substrate 568face to each other with a liquid crystal layer 562 interposedtherebetween, in which an organic compound layer 566 including aphotocatalyst substance, a transistor 551 having a multigate structure,a pixel electrode layer 560, and an insulating layer 561 serving as analignment film are provided for the first substrate 550, and aninsulating layer 563 serving as an alignment film, a counter electrode564, and a colored layer 565 serving as a color filter are provided forthe second substrate 568. An organic compound layer 566 including aphotocatalyst substance is provided between the first substrate 550, andthe element layer including the transistor 551 and the pixel electrodelayer 560. As the first substrate 550, an appropriate substrate may beselected, which is suitable for conditions in a manufacturing process,in other words, which can withstand a process (such as a heat treatment)in forming a liquid crystal display element included in the elementlayer. A photocatalyst substance is included in the organic compoundlayer 566.

After that, the photocatalyst substance is irradiated with light 581which is emitted from a light source 580 and passes through the firstsubstrate 550, from the light-transmitting first substrate 550 side(FIG. 12B).

The photocatalyst substance absorbs the light 581, and thus, thephotocatalyst substance is activated by the light 581. The activationenergy acts on the peripheral organic compound included in the organiccompound layer 566 including a photocatalyst substance, and as a result,changes and modifies properties of the organic compound. In other words,by the energy of the activated photocatalyst substance (oxidizability),a carbon-hydrogen bond and a carbon-carbon bond of such organic compoundare separated, and a part of the organic compound becomes carbon dioxideand water, and is degassed. Consequently, the organic compound layer 566including a photocatalyst substance becomes rough, so that it becomesthe organic compound layer 570 including a photocatalyst substance.

When power is applied to the second substrate 568 side so as to transferthe element layer including the transistor 551 and the liquid crystaldisplay element, the strength of the organic compound layer 570including a photocatalyst substance decreases, and thus, the organiccompound layer 569 b including a photocatalyst substance on the elementlayer side and the organic compound layer 569 a including aphotocatalyst substance on the substrate side are separated (sectioned)from each other within the layer. Accordingly, the element layerincluding the transistor 551 and the display element can be peeled fromthe first substrate 550 (FIG. 12C).

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate.

Accordingly, since elements can be freely transferred to various typesof substrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used fora substrate, and a semiconductor device can be manufactured at low cost,in addition to having various functions suitable for applications.

FIGS. 13A to 13C show a manufacturing process of an active matrix typeelectronic paper to which the present invention is applied. AlthoughFIGS. 13A to 13C show an active matrix type one, the present inventioncan also applied to a passive matrix type electronic paper.

Although FIGS. 12A to 12C show a liquid crystal display element as anexample of a display element, a display device using a twist balldisplay system may be used. A twist ball display system means a methodin which spherical particles which are colored separately in black andwhite are arranged between the first conductive layer and the secondconductive layer, and a potential difference is generated between thefirst conductive layer and the second conductive layer so as to controldirections of the spherical particles, so that display is performed.

An organic compound layer 583 including a photocatalyst substance isprovided between a light-transmitting substrate 596 and an element layerincluding spherical particles 589. As the first substrate 596, anappropriate substrate may be selected, which is suitable for conditionsin a manufacturing process, in other words, which can withstand aprocess (such as a heat treatment) in forming a display element includedin the element layer. A photocatalyst substance is included in theorganic compound layer 583.

The transistor 597 is a reverse coplanar type thin film transistor, andincludes a gate electrode layer 582, a gate insulating layer 584, wiringlayers 585 a and 585 b, and a semiconductor layer 586. In addition, thewiring layer 585 b is electrically connected to the first electrodelayers 587 a and 587 b through an opening formed in the insulating layer598. Between the first electrode layers 587 a and 587 b, and the secondelectrode layer 588, the spherical particles 589 which each include ablack region 590 a and a white region 590 b, and on the peripherythereof, a cavity 594 which is filled with liquid, is provided. Thecircumference of the spherical particle 589 is filled with a filler 595such as resin or the like (FIGS. 13A to 13C).

After that, the photocatalyst substance is irradiated with light 581which is emitted from a light source 580 and passes through the firstsubstrate 596, from the light-transmitting first substrate 596 side(FIG. 13B).

The photocatalyst substance absorbs the light 581, and thus, thephotocatalyst substance is activated by the light. The activation energyacts on the peripheral organic compound included in the organic compoundlayer 583 including a photocatalyst substance, and as a result, changesand modifies properties of the organic compound. In other words, by theenergy of the activated photocatalyst substance (oxidizability), acarbon-hydrogen bond and a carbon-carbon bond of such organic compoundare separated, and a part of the organic compound becomes carbon dioxideand water, and is degassed. Consequently, the organic compound layer 583including a photocatalyst substance becomes rough, so that it becomesthe organic compound layer 591 including a photocatalyst substance.

When power is applied to the second substrate 592 side so as to transferthe element layer including the transistor 597 and the display element,the strength of the organic compound layer 591 including a photocatalystsubstance decreases, and thus, the organic compound layer 593 bincluding a photocatalyst substance on the element layer side and theorganic compound layer 593 a including a photocatalyst substance on thesubstrate side are separated (sectioned) from each other within thelayer. Accordingly, the element layer including the transistor 597 andthe spherical particles 589 can be peeled from the first substrate 596(FIG. 13C).

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and the element withgood shape can be easily and freely transferred to various types ofsubstrates.

Accordingly, since elements can be transferred to various types ofsubstrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used fora substrate, and a semiconductor device can be manufactured at low cost,in addition to having various functions suitable for applications.

Further, instead of the twist ball, an electrophoretic element can alsobe used. A microcapsule having a diameter of 10 μm to 200 μm which isfilled with transparent liquid, positively charged white microparticlesand negatively charged black microparticles and sealed, is used. In themicrocapsule which is provided between the first electrode layer and thesecond electrode layer, when an electric field is applied by the firstelectrode layer and the second electrode layer, the white microparticlesand black microparticles move to opposite sides from each other, so thatwhite or black can be displayed. A display element using this principleis an electrophoretic display element, and is called an electronic paperin general. The electrophoretic display element has higher reflectancethan a liquid crystal display element, and thus, an assistant light isunnecessary, power consumption is low, and a display portion can berecognized in a dusky place. Even when power is not supplied to thedisplay portion, an image which has been displayed once can be stored.Thus, it is possible that a displayed image can be stored, even if asemiconductor device having a display function is distanced from asource of an electronic wave.

The transistor may have any structure, as long as the transistor canserve as a switching element. As a semiconductor layer, varioussemiconductors such as an amorphous semiconductor, a crystallinesemiconductor, a polycrystalline semiconductor, and a microcrystalsemiconductor can be used, or an organic transistor may be formed usingan organic compound.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling are kept. Therefore, more highly reliablesemiconductor devices and display devices can be manufactured with highyield without complicating the apparatus and the process formanufacturing.

Embodiment Mode 5

An embodiment mode of the present invention is described with referenceto FIGS. 14A and 14B. Embodiment Mode 5 shows an example in which achannel etch type reverse staggered thin film transistor is used as athin film transistor, and an interlayer insulating layer is not formedover the thin film transistor. Thus, detailed description of the sameportions or portions having the same function are omitted. FIG. 14A is atop view of a light-emitting display device which is manufactured usinga transfer process of the present invention, and FIG. 14B is a crosssectional view of FIG. 14A.

As shown FIGS. 14A and 14B, a pixel portion 655, driver circuit regions651 a and 651 b which are scan line driver circuits, and a drivercircuit 653 are sealed between a substrate 600 and a sealing substrate610 by a sealing material 612, and a driver circuit region 652 which isa signal line driver circuit using an IC driver is provided over thesubstrate 600. Over the substrate 600, in a driver circuit region 653,reverse staggered type thin film transistors 601 and 602 are provided;in a pixel portion 655, an reverse staggered type thin film transistor603, a gate insulating layer 605, an insulting film 606, an insulatinglayer 609, a light-emitting element 650 in which a first electrode layer604, an electroluminescent layer 607 and a second electrode layer 608are stacked, a filler 611, a sealing substrate 610 are provided; in asealing region, a sealing material 612, a terminal electrode layer 613,an anisotropic conductive layer 614 and an FPC 615 are provided.

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate. The remaining layer on the element layer side after peelingthe organic compound layer including a photocatalyst substance is theorganic compound layer 630 including a photocatalyst substance. Theorganic compound layer 630 including a photocatalyst substance may betransferred to the sealing substrate 610, and then, may be removed bypolishing or the like.

Accordingly, since elements can be transferred to various types ofsubstrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used fora substrate, and a semiconductor device can be manufactured at low cost,in addition to having various functions suitable for applications.

Gate electrode layers, source electrode layers, and drain electrodelayers of the reverse staggered type thin film transistors 601, 602, 603are formed by a droplet-discharging method. The droplet-dischargingmethod is a method in which a composition having a liquid conductivematerial is discharged, solidified by drying or baking so as to form aconductive layer or an electrode layer. When a composition including aninsulating material is discharged and solidified by drying or baking, aninsulating layer can also be formed. Since a component of a displaydevice, such as a conductive layer or an insulating layer can beselectively formed, the process is simplified and material loss can beprevented. Therefore, a display device can be manufactured at low costwith high productivity.

A droplet-discharging means used in a droplet-discharging method isgenerally a means for discharging liquid droplets, such as a nozzleequipped with a composition discharge outlet, a head having one or aplurality of nozzles, or the like. Each nozzle of thedroplet-discharging means is set such that the diameter is 0.02 to 100μm (preferably less than or equal to 30 μm) and the quantity ofcomponent discharge from the nozzle is 0.001 to 100 pl (preferablygreater than or equal to 0.1 pl and less than or equal to 40 pl, morepreferably less than or equal to 10 pl). The discharge quantity isincreased proportionately to the diameter of the nozzle. It ispreferable that the distance between an object to be processed and thedischarge outlet of the nozzle be as short as possible in order to dropthe droplet at a desired position; the distance is preferably set to be0.1 to 3 mm (much preferably less than or equal to 1 mm).

In the case where a film (e.g., an insulating film or a conductive film)is formed by a droplet-discharging method, the film is formed asfollows: a composition containing a film material which is processedinto a particle state is discharged, and the composition is fused orwelded by baking to be solidified. A film formed by a sputtering methodor the like tends to have a columnar structure, whereas the film thusformed by discharging and baking of the composition containing aconductive material tends to have a polycrystalline structure having thelarge number of grain boundaries.

As the composition to be discharged from the discharge outlet, aconductive material dissolved or dispersed in a solvent is used. Theconductive material corresponds to a fine particle or a dispersednanoparticle of metal such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, or Al,metal sulfide such as Cd or Zn, oxide of Fe, Ti, Si, Ge, Zr, Ba, or thelike, silver halide, or the like. In addition, the above-describedconductive materials may also be used in combination. As a transparentconductive film, indium tin oxide (ITO), indium tin oxide containingsilicon oxide (ITSO), organic indium, organic tin, zinc oxide, titaniumnitride, or the like can be used. Further, indium zinc oxide (IZO)containing zinc oxide (ZnO), zinc oxide (ZnO), ZnO doped with gallium(Ga), tin oxide (SnO₂), indium oxide containing tungsten oxide, indiumzinc oxide containing tungsten oxide, indium oxide containing titaniumoxide, indium tin oxide containing titanium oxide, or the like may alsobe used. As for the composition to be discharged from the dischargeoutlet, it is preferable to use any of the materials of gold, silver,and copper dissolved or dispersed in a solvent, considering specificresistance, and it is more preferable to use silver or copper having lowresistance. When silver or copper is used, a barrier film may beprovided in addition as a countermeasure against impurities. A siliconnitride film or a nickel boron (NiB) film can be used as the barrierfilm.

The composition to be discharged is a conductive material dissolved ordispersed in a solvent, which further contains a dispersant or athermosetting resin. In particular, the thermosetting resin has afunction of preventing generation of cracks or uneven baking duringbaking. Thus, a formed conductive layer may contain an organic material.The contained organic material is different depending on heatingtemperature, atmosphere, or time. This organic material is an organicresin which functions as a thermosetting resin, a solvent, a dispersant,and a coating of a metal particle, or the like; typically, polyimide,acrylic, a novolac resin, a melamine resin, a phenol resin, an epoxyresin, a silicon resin, a furan resin, a diallyl phthalate resin, orother organic resins can be given as examples.

In addition, a particle with a plurality of layers, in which aconductive material is coated with another conductive material, may alsobe used. For example, a particle with a three-layer structure in whichcopper is coated with nickel boron (NiB) and the nickel boron is furthercoated with silver, or the like may be used. As for the solvent, esterssuch as butyl acetate or ethyl acetate, alcohols such as isopropylalcohol or ethyl alcohol, an organic solvent such as methyl ethyl ketoneor acetone, or water is used. The viscosity of the composition ispreferably less than or equal to 20 mPa·s (cp), which prevents thecomposition from drying, and enables the composition to be dischargedsmoothly from the discharge outlet. The surface tension of thecomposition is preferably less than or equal to 40 mN/m. However, theviscosity of the composition and the like may be appropriatelycontrolled depending on a solvent to be used or an intended purpose. Forexample, the viscosity of a composition in which ITO, organic indium, ororganic tin is dissolved or dispersed in a solvent may be set to be 5 to20 mPa·s, the viscosity of a composition in which silver is dissolved ordispersed in a solvent may be set to be 5 to 20 mPa·s, and the viscosityof a composition in which gold is dissolved or dispersed in a solventmay be set to be 5 to 20 mPa·s.

Further, the conductive layer may also be formed from a plurality ofstacked conductive materials. In addition, the conductive layer may beformed first by a droplet-discharging method using silver as aconductive material and may be then plated with copper or the like. Theplating may be performed by electroplating or a chemical (electroless)plating method. The plating may be performed by immersing a substratesurface in a container filled with a solution containing a platingmaterial; alternatively, the solution containing a plating material maybe applied to the substrate placed obliquely (or vertically) so as toflow the solution containing a plating material on the substratesurface. When the plating is performed by application of a solution tothe substrate placed obliquely, there is an advantage of miniaturizing aprocess apparatus.

The diameter of a particle of the conductive material is preferably assmall as possible for the purpose of preventing nozzles from beingclogged and for manufacturing a minute pattern, although it depends onthe diameter of each nozzle, a desired shape of a pattern, or the like.Preferably, the diameter of the particle of the conductive material isless than or equal to 0.1 μm. The composition is formed by a knownmethod such as an electrolyzing method, an atomizing method, or a wetreduction method, and the particle size is generally about 0.01 to 10μm. When a gas evaporation method is employed, the size of nanoparticlesprotected by a dispersant is as minute as about 7 nm, and when thesurface of each particle is covered with a coating, the nanoparticles donot aggregate in the solvent and are stably dispersed in the solvent atroom temperature, and behave similarly to liquid. Accordingly, it ispreferable to use a coating.

In addition, the step of discharging the composition may be performedunder reduced pressure. When the step is performed under reducedpressure, an oxide film or the like is not formed on the surface of theconductive material, which is preferable. After the composition isdischarged, either drying or baking or both of them is/are performed.Both the drying step and baking step are heat treatments; however, forexample, drying is performed at 100° C. for 3 minutes and baking isperformed at 200 to 350° C. for 15 to 60 minutes, and they are differentin purpose, temperature, and time period. The steps of drying and bakingare performed under normal pressure or under reduced pressure, by laserirradiation, rapid thermal annealing, heating using a heating furnace,or the like. It is to be noted that the timing of such a heat treatmentis not particularly limited. The substrate may be heated in advance tofavorably perform the steps of drying and baking, and the temperature atthat time is, although it depends on the material of the substrate orthe like, generally 100 to 800° C. (preferably, 200 to 350° C.). Throughthese steps, nanoparticles are made in contact with each other andfusion and welding are accelerated since a peripheral resin is hardenedand shrunk, as well as the solvent in the composition is volatilized orthe dispersant is chemically removed.

A continuous wave or pulsed gas laser or solid-state laser may be usedfor laser irradiation. An excimer laser, a YAG laser, or the like can beused as the former gas laser. A laser using a crystal of YAG, YVO₄,GdVO₄, or the like which is doped with Cr, Nd, or the like can be usedas the latter solid-state laser. It is preferable to use a continuouswave laser in consideration of the absorptance of a laser beam.Moreover, a laser irradiation method in which pulsed and continuous wavelasers are combined may be used. It is preferable that the heattreatment by laser irradiation be instantaneously performed withinseveral microseconds to several tens of seconds so as not to damage thesubstrate 100, depending on heat resistance of the substrate 100. Rapidthermal annealing (RTA) is carried out by raising the temperaturerapidly and heating the substrate instantaneously for severalmicroseconds to several minutes with the use of an infrared lamp or ahalogen lamp which emits ultraviolet to infrared light in an inert gasatmosphere. Since this treatment is performed instantaneously, only anoutermost thin film can be heated practically and the lower layer of thefilm is not adversely affected. In other words, even a substrate havinglow heat resistance such as a plastic substrate is not adverselyaffected.

After the conductive layer or the insulating layer is formed bydischarging a liquid composition by a droplet-discharging method, thesurface thereof may be planarized by pressing with pressure to enhanceplanarity. As a pressing method, concavity and convexity may be reducedby scanning the surface with a roller-shaped object, or the surface maybe pressed perpendicularly by a flat plate-shaped object. A heating stepmay be performed at the time of pressing. Alternatively, the concavityand convexity of the surface may be removed with an air knife after thesurface is softened or melted with a solvent or the like. A CMP methodmay also be used for polishing the surface. This step can be employed inplanarizing a surface when concavity and convexity are generated by adroplet-discharging method.

In this embodiment mode, an amorphous semiconductor is used as asemiconductor layer and a semiconductor layer having one conductivitytype may be formed as needed. In this embodiment mode, a semiconductorlayer and an amorphous n-type semiconductor layer as a semiconductorlayer having one conductivity type are stacked. Further, an NMOSstructure of an N-channel TFT in which an n-type semiconductor layer isformed, a PMOS structure of a P-channel TFT in which a p-typesemiconductor layer is formed, or a CMOS structure of an N-channel TFTand a P-channel TFT can be manufactured. In this embodiment mode, thereverse staggered thin film transistors 601 and 603 are N-channel TFTs,and the reverse staggered thin film transistor 602 is a P-channel TFT,thereby the reverse staggered thin film transistors 601 and 602 form aCMOS structure in the driver circuit region 653.

Moreover, in order to impart conductivity, an element impartingconductivity is added by doping and an impurity region is formed in thesemiconductor layer; therefore, an N-channel TFT and/or a P-channel TFTcan be formed. Instead of forming an n-type semiconductor layer,conductivity may be imparted to the semiconductor layer by a plasmatreatment with a PH₃ gas.

Further, the semiconductor layer can be formed using an organicsemiconductor material by a printing method, a spray method, a spincoating method, a droplet-discharging method, a dispenser method, or thelike. In this case, the aforementioned etching step is not required;therefore, the number of steps can be reduced. As an organicsemiconductor, a low molecular material such as pentacene, a highmolecular material, or the like can be used, and a material such as anorganic pigment or a conductive high molecular material can be used aswell. As the organic semiconductor material used in the presentinvention, a high molecular material of a π electron conjugated systemof which a skeleton is composed of conjugated double bonds ispreferable. Typically, a soluble high molecular material such aspolythiophene, polyfluorene, poly(3-alkylthiophene), or a polythiophenederivative can be used.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling are kept. Therefore, more highly reliablesemiconductor devices and display devices can be manufactured with highyield without complicating the apparatus and the process formanufacturing.

Embodiment Mode 6

An embodiment mode of the present invention is described with referenceto FIGS. 15A and 15B. FIGS. 15A and 15B show a liquid crystal displaydevice which is manufactured using a peeling process of the presentinvention.

FIG. 15A is a top view of the liquid crystal display device which ismanufactured using a peeling process of the present invention, and FIG.15B is a cross sectional view of FIG. 15A.

As shown in FIG. 15A, a pixel portion 256, and driver circuit regions258 a and 258 b which are scan line driver circuits are sealed between asubstrate 200 and a sealing substrate 210 by a sealing material 282, anda driver circuit region 257 which is a signal line driver circuit usingan IC driver is provided over the substrate 200. In the pixel portion256, a transistor 220 is provided. The substrate 200 is attached to thepeeled element layer and the organic compound layer 230 including aphotocatalyst substance, and may be formed of a material which does nottransmit light in a wavelength which activates the photocatalystsubstance left in the element layer. The counter substrate 210 and thesubstrate 200 are flexible substrates, resin film or the like. It isconcerned that a substrate formed from a synthetic resin generally has alower allowable temperature limit than other substrates. However, asubstrate with high heat resistance is adopted in a manufacturingprocess first and the substrate is replaced by a substrate formed from asynthetic resin, thereby making it possible to employ such a substrateformed from a synthetic resin.

In the display device shown in FIGS. 15A and 15B, over the substrate200, in a pixel portion, a transistor 220 which is a reverse staggeredtype thin film transistor, a pixel electrode layer 201, an insulatinglayer 202, an insulating layer 203 serving as an alignment film, aliquid crystal layer 204, a spacer 281, an insulating layer 205 servingas an alignment layer, a counter electrode layer 206, a color filter208, a black matrix 207, a counter substrate 210, and a polarizing plate231 are provided; in a sealing region, a sealing material 282, aterminal electrode layer 287, an anisotropic conductive layer 285 and anFPC 286 are provided.

A gate electrode layer, a source electrode layer, and a drain electrodelayer of the transistor 220 which is a reverse staggered type thin filmtransistor formed in this embodiment mode are formed by adroplet-discharging method. The droplet-discharging method is a methodin which a composition having a liquid conductive material isdischarged, solidified by drying or baking so as to form a conductivelayer or an electrode layer. When a composition including an insulatingmaterial is discharged and solidified by drying or baking, an insulatinglayer can also be formed. Since a component of a display device, such asa conductive layer or an insulating layer can be selectively formed, theprocess is simplified and material loss can be prevented. Therefore, adisplay device can be manufactured at low cost with high productivity.

In this embodiment mode, an amorphous semiconductor is used as asemiconductor layer and a semiconductor layer having one conductive typemay be formed as needed. In this embodiment mode, a semiconductor layerand an amorphous n-type semiconductor layer as a semiconductor layerhaving one conductive type are stacked. Further, an NMOS structure of anN-channel TFT in which an n-type semiconductor layer is formed, a PMOSstructure of a P-channel TFT in which a p-type semiconductor layer isformed, or a CMOS structure of an N-channel TFT and a P-channel TFT canbe manufactured.

Moreover, in order to impart conductivity, an element impartingconductivity is added by doping and an impurity region is formed in thesemiconductor layer; therefore, an N-channel TFT and/or a P-channel TFTcan be formed. Instead of forming an n-type semiconductor layer,conductivity may be imparted to the semiconductor layer by plasmatreatment with a PH₃ gas.

In this embodiment mode, the transistor 220 is an N-channel reversestaggered type thin film transistor. In addition, a channel protectivetype reverse staggered thin film transistor in which a protective layeris provided over the channel region of the semiconductor layer can alsobe used.

Further, the semiconductor layer can be formed using an organicsemiconductor material by an evaporation method, a printing method, aspray method, a spin coating method, a droplet-discharging method, adispenser method, or the like. In this case, the etching step is notnecessarily conducted; therefore, the number of steps can be reduced. Asan organic semiconductor, a low molecular material such as pentacene, ahigh molecular material or the like can be used, and a material such asan organic pigment and a conductive high molecular material can be usedas well. As the organic semiconductor material used in the presentinvention, a high molecular material of a π electron conjugated systemof which a skeleton is composed of conjugated double bonds ispreferable. Typically, a soluble high molecular material such aspolythiophene, polyfluorene, poly(3-alkylthiophene), or a polythiophenederivative can be used.

In the pixel portion 256, a base film may be provided between thetransistor 220 and the organic compound layer including a photocatalystsubstance. The base film may be formed from an inorganic insulating filmor an organic insulating film, or a stack of the inorganic insulatingfilm and the organic insulating film. There are many methods for forminga thin film transistor in addition to the above method, and the thinfilm transistor can be manufactured by any method. For example, acrystalline semiconductor film is used as an active layer. A gateelectrode is provided over the crystalline semiconductor film with agate insulating film interposed therebetween. An impurity element can beadded to the active layer using the gate electrode instead of a mask.Addition of the impurity element using the gate electrode instead of amask makes it unnecessary to form a mask for addition of the impurityelement. The gate electrode can have either a single-layer structure ora stacked-layer structure. The impurity region can be made a highconcentration impurity region or a low concentration impurity region bycontrolling the concentration thereof. A structure of such a thin filmtransistor having such a low concentration impurity region is referredto as an LDD (Lightly doped drain) structure. In addition, the lowconcentration impurity region can be formed to be overlapped with thegate electrode. A structure of such a thin film transistor is referredto as a GOLD (Gate Overlapped LDD) structure. Polarity of the thin filmtransistor is to be an n-type by using phosphorus (P) or the like in theimpurity region. When polarity of the thin film transistor is to be ap-type, boron (B) or the like may be added. Thereafter, an insulatingfilm covering the gate electrode and the like is formed. A dangling bondof the crystalline semiconductor film can be terminated by a hydrogenelement mixed into the insulating film.

In order to improve planarity, an interlayer insulating film may beformed. For the interlayer insulating film, an organic material, aninorganic material, or a stacked structure thereof can be used. Theinterlayer insulating film can be formed from a material selected fromsilicon oxide, silicon nitride, silicon oxynitride, silicon nitrideoxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide oraluminum oxide containing a larger amount of nitrogen content thanoxygen content, diamond like carbon (DLC), polysilazane, carboncontaining nitrogen (CN), PSG (phosphosilicate glass), BPSG(borophosphosilicate glass), alumina, and a substance containing anotherinorganic insulating material. Further, an organic insulating materialmay be used. As the organic material, which may be either photosensitiveor nonphotosensitive, polyimide, acryl, polyamide, polyimide amide,resist, benzocyclobutene, a siloxane resin, or the like can be used. Itis to be noted that the siloxane resin corresponds to a resin includinga Si—O—Si bond. Siloxane has a skeleton structure of a bond of silicon(Si) and oxygen (O). As for a substituent, an organic group containingat least hydrogen (such as an alkyl group or aromatic hydrocarbon) isused. As for a substituent, a fluoro group may be used. Further, as fora substituent, an organic group containing at least hydrogen and afluoro group may be used.

The pixel portion and the driver circuit region can be formed over thesame substrate by using the crystalline semiconductor film.

A structure of the thin film transistor in the pixel portion is notlimited to this embodiment mode, and the thin film transistor in thepixel portion may have a single-gate structure in which one channelformation region is formed, a double-gate structure in which two channelformation regions are formed, or a triple-gate structure in which threechannel formation regions are formed. A thin film transistor in theperipheral driver circuit region may have a single-gate structure, adouble-gate structure, or a triple-gate structure.

Further, the present invetnion is not limited to the manufacturingmethod of a thin film transistor shown in this embodiment mode. Thepresent invention can be applied to a thin film transistor having atop-gate structure (such as a staggered type), a thin film transistorhaving a bottom-gate structure (such as a coplanar type), a thin filmtransistor a dual-gate structure in which two gate electrode layers arearranged above and below a channel formation region through a gateinsulating film, or some other structures.

Next, an insulating layer 203 referred to as an alignment film is formedby a printing method or a droplet-discharging method so as to cover thepixel electrode layer 201 and the spacer 281. The insulating layer 203can be selectively formed when a screen printing method or an off-setprinting method is used. After that, a rubbing treatment is performed.When a liquid crystal mode, for example, a VA mode, is employed, thereare cases when a rubbing treatment is not performed. An insulating layer205 serving as an alignment film is similar to the insulating layer 203.Subsequently, the sealing material 282 is formed in the peripheralregion where the pixel is formed by a droplet-discharging method, adispenser method or the like.

After that, the counter substrate 210 in which an insulating layer 205serving as an alignment film, a counter electrode layer 206, a coloredlayer 208 serving as a color filter, and a black matrix are provided, isattached to the TFT substrate, with a spacer 281 between the countersubstrate and the TFT substrate. The space between the counter substrateand the TFT substrate is provided with a liquid crystal layer 204. Then,a polarizing plate 231 is provided on the outer side of the countersubstrate 210. In this embodiment mode, a metal layer havingreflectivity to visible light is used for the pixel electrode layer 201,and light passes through the counter substrate 210 so as to extractoutside. Thus, the example in which the polarizing plate is provided forthe counter substrate 210 side only is shown. However, when light isextracted from the substrate 200 side by using a transparent electrodelayer as the pixel electrode layer, a polarizing plate is provided alsoon the side opposite to the surface of the substrate in which elementsare formed. In addition, a retardation plate may be provided between thepolarizing plate 231 and the counter substrate 210, which may serve as acircular polarizing plate. The polarizing plate can be provided over thesubstrate by using an adhesive layer. A filler may be mixed in thesealing material. Note that the color filter and the like may be formedfrom materials which exhibit red (R), green (G), and blue (B) in thecase where the liquid crystal display device performs full-colordisplay, or it may be formed from a material which exhibits at least onecolor in the case of mono-color display.

Note that the color filter is not provided in some cases wherelight-emitting diodes (LEDs) of RGB or the like are arranged as abacklight and a successive additive color mixing method (fieldsequential method) in which color display is performed by time divisionis employed. The black matrix is provided to as to be overlapped with atransistor and a CMOS circuit for the sake of reducing reflection ofexternal light due to wirings of the transistor and the CMOS circuit.Note that the black matrix may be provided so as to be overlapped with acapacitor element. This is because reflection on a metal filmconstituting a part of the capacitor element can be prevented.

As a method for forming the liquid crystal layer, a dispenser method(dripping method) or an injecting method in which liquid crystal isinjected using a capillary phenomenon after attaching the substratehaving an element and the counter substrate 210 can be used. A drippingmethod may be applied when a large-sized substrate to which it isdifficult to apply an injecting method is used.

In the present invention, after the element layer is formed over thesubstrate which can withstand a process condition (such as atemperature) with the organic compound layer including a photocatalystsubstance interposed therebetween, a transfer process to a desiredsubstrate (for example, a flexible substrate such as a film) isconducted. In the transfer process, light irradiation is conducted bytransmitting the light through the substrate over which the organiccompound layer including a photocatalyst substance is formed (so calledrear exposure). The photocatalyst substance activated by the lightdecomposes the peripheral organic compound into carbon dioxide andwater, and makes the layer rough. The structure of the organic compoundlayer including a photocatalyst substance is made rough and the strengththereof decreases so that the layer becomes fragile. Thus, when power inopposite directions is applied from both sides of the substrate side andthe element layer side, the organic compound layer including aphotocatalyst substance is sectioned (separated) into the substrate sideand the element layer side, thereby transferring the element layer tothe counter substrate side. In this embodiment mode, after transferringthe element layer to the counter substrate side, the element layer isattached to the substrate 200.

As for formation of the liquid crystal layer, the transfer process tothe substrate 200 may be conducted before or after forming the liquidcrystal layer. For example, when a dispenser method is used as theformation method, a TFT and an alignment film may be formed, the elementlayer including the TFT element may be transferred to the substrate 200before dropping a liquid crystal, then, the liquid crystal may bedropped onto the element layer formed over the substrate 200 to form theliquid crystal layer, and then, it may be sealed by using the countersubstrate. Alternatively, an element layer may be formed over a glasssubstrate or the like which can withstand the process, and attached to acounter substrate while keeping a space formed by a spacer, and then, aliquid crystal may be injected between the element layer and the countersubstrate by an injection method so as to form a liquid crystal layer.In a display device in which steps including up to and including aliquid crystal layer are finished, the element layer and the liquidcrystal layer formed over an organic compound layer including aphotocatalyst substance may be peeled from a processing substrate withthe use of a function of the photocatalyst substance, and then, attachedto the substrate 200.

A spacer may be provided in such a way that particles having a size ofseveral μm are sprayed, or a resin film is formed over an entire surfaceof a substrate and etched. The material of such a spacer is applied by aspinner and then, subjected to exposure and development, so that apredetermined pattern is formed. Moreover, the spacer is heated at 150to 200° C. in a clean oven or the like so as to be hardened. The thusmanufactured spacer can have various shapes depending on the conditionsof the exposure and development. It is preferable that the spacer have acolumnar shape with a flat top so that mechanical strength for theliquid crystal display device can be secured when the counter substrateis attached. The shape can be conic, pyramidal, or the like, there areno particular limitations on the shape. Further, in this embodimentmode, the spacer 281 having curvature is provided over the pixelelectrode layer 201, and covered with the insulating layer 203 servingas an alignment layer. When the alignment film is formed over the spacerin this manner, a contact or a short circuit caused by defectivecoverage or the like between the element electrode layer on the elementlayer side and the counter substrate, can be prevented. In addition, theshape of the spacer 281 is columnar, and has a curvature in a ridgeportion of the column. In other words, the curvature radius R of an endportion in the top portion of the columnar spacer is 2 μm or less,preferably 1 μm or less. An even pressure can be applied, because of theshape like this, and thus, application of an excess pressure to onepoint can be prevented. Note that a low end of the spacer indicates anend portion of the columnar spacer of the flexible substrate 200 side,and an upper end thereof indicates a top portion of the columnar spacer.The width of a center portion in the height direction of the columnarspacer is L1, and the width of the end portion on the flexible secondsubstrate side, of the columnar spacer is L2. 0.8≦L2/L1≦3 is satisfied.In addition, an angle between a tangent plane at the center of the sidesurface of the columnar spacer and a surface of the first flexiblesubstrate or an angle between a tangent plane at the center of the sidesurface of the columnar spacer and a surface of the second flexiblesubstrate is preferably in the range of 65° to 115°. Further, the heightof the spacer is preferably in the range of 0.5 μm to 10 μm or in therange of 1.2 μm to 5 μm.

Subsequently, a terminal electrode layer 287 electrically connected tothe pixel portion is provided with an FPC 286, which is a wiring boardfor connection, through an anisotropic conductive layer 285. The FPC 286has a function of transmitting external signals or potential. Throughthe above steps, a liquid crystal display device having a displayfunction can be manufactured.

A wiring included in the transistor, the gate electrode layer, the pixelelectrode layer 201, and the conductive layer 206 that is a counterelectrode layer can be formed from a material selected from indium tinoxide (ITO), indium zinc oxide (IZO) in which zinc oxide (ZnO) is mixedwith indium oxide, a conductive material in which silicon oxide (SiO₂)is mixed with indium oxide, organoindium, organotin, indium oxidecontaining tungsten oxide, indium zinc oxide containing tungsten oxide,indium oxide containing titanium oxide, or indium tin oxide containingtitanium oxide; a metal such as tungsten (W), molybdenum (Mo), zirconium(Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium(Cr), cobalt (Co), nickel (Ni), titanium (Ti), platinum (Pt), aluminum(Al), copper (Cu) or silver (Ag); an alloy of such metals; or metalnitride thereof.

Materials of the pixel electrode layer 201 and the conductive layer 206may be selected as appropriated, depending on the types of the displaydevice, i.e., a transmissive type display device or a reflective typedisplay device. When light needs to pass, a light-transmitting electrodeor a metal film enough to transmit light may be selected from the abovedescribed electrode materials.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling are kept. Therefore, highly reliablesemiconductor devices and display devices can be manufactured with highyield without complicating the apparatus and the process formanufacturing.

Embodiment Mode 7

Embodiment mode 7 will describe an example of the semiconductor devicesdescribed in the foregoing embodiment modes with reference to drawings.

A semiconductor device described in this embodiment mode is capable ofcontactless reading and writing of data. Data transmission method isbroadly classified into three methods of an electromagnetic couplingmethod in which communication is performed by mutual induction with apair of coils disposed opposite to each other, an electromagneticinduction method in which communication is performed by an inductiveelectromagnetic field, and an electric wave method in whichcommunication is performed by using electric waves; and any of thesemethods may be employed. An antenna that is used for transmitting datacan be provided in two ways. One way is to provide an antenna over asubstrate provided with a plurality of elements and memory elements, andthe other way is to provide a terminal portion for a substrate providedwith a plurality of elements and memory elements and connect an antennaprovided over another substrate to the terminal portion.

First, an example of a structure of the semiconductor device in the casewhere an antenna is provided over a substrate provided with a pluralityof elements and memory elements is described with reference to FIG. 16.

FIG. 16 shows an active matrix type semiconductor device. Anelement-formation layer 335 which includes a transistor portion 330having transistors 310 a and 310 b, a transistor portion 340 havingtransistors 320 a and 320 b, and insulating layers 301 a, 301 b, 308,309, 311, 316, and 314 is provided over a substrate 300. A memoryelement portion 325 and a conductive layer 343 serving as an antenna areprovided above the element-formation layer 335.

Although the case where the memory element portion 325 or the conductivelayer 343 serving as an antenna is provided above the element-formationlayer 335 is shown here, the structure is not limited thereto. Thememory element portion 325 or the conductive layer 343 serving as anantenna can also be provided below the element-formation layer 335 or inthe same layer as the element-formation layer 335.

The memory element portion 325 includes memory elements 315 a and 315 b.The memory element 315 a is formed by stacking partition walls(insulating layers) 307 a, 307 b, an insulating layer (memory layer)312, and a second conductive layer 313 over a first conductive layer 306a. The memory element 315 b is formed by stacking partition walls(insulating layers) 307 b, 307 c, the insulating layer (memory layer)312, and the second conductive layer 313 over a first conductive layer306 b. In addition, the insulating layer 314 serving as a protectionfilm is formed to cover the second conductive layer 313. The firstconductive layers 306 a and 306 b for forming the memory elements 315 aand 315 b are connected to source electrode layers or drain electrodelayers of the transistors 310 a and 310 b, respectively. That is, eachmemory element is connected to one transistor. In addition, although theinsulating layer (memory layer) 312 is formed over an entire surface soas to cover the first conductive layers 306 a and 306 b, and thepartition walls (insulating layers) 307 a, 307 b, and 307 c here, theinsulating layer 312 may be selectively formed for each memory cell.

As described in the foregoing embodiment modes, in the memory element315 a, an element having a rectifying property may be provided betweenthe first conductive layer 306 a and the insulating layer (memory layer)312, or between the insulating layer (memory layer) 312 and the secondconductive layer 313. As the element having a rectifying property, theelements as described above also can be used. The same can be applied tothe memory element 315 b.

Here, the conductive layer 343 serving as an antenna is provided over aconductive layer 342 formed from the same layer as the second conductivelayer 313, and electrically connected to the transistor 320 a via theconductive layer 341 formed from the same layer as the first conductivelayers 306 a and 306 b. Note that the conductive layer serving as anantenna may also be formed from the same layer as the second conductivelayer 313.

As a material of the conductive layer 343 serving as an antenna, onekind of elements of gold (Au), platinum (Pt), nickel (Ni), tungsten (W),molybdenum (Mo), cobalt (Co), copper (Cu), aluminum (Al), manganese(Mn), titanium (Ti), and the like, an alloy containing a plurality ofthe elements, or the like can be used. In addition, as a forming methodof the conductive layer 343 serving as an antenna, evaporation,sputtering, CVD, any printing method such as screen printing or gravureprinting, a droplet-discharging method, or the like can be used.

Any of a P-channel TFT, an N-channel TFT, or a CMOS combining them canbe provided as each of the transistors 310 a, 310 b, 320 a, and 320 bincluded in the element-formation layer 335. Further, the semiconductorlayer in included the transistors 310 a, 310 b, 320 a, and 320 b canhave any structure. For example, an impurity region (including a sourceregion, a drain region, and an LDD region) may be formed, or either aP-channel type or an N-channel type may be employed. In addition, aninsulating layer (a sidewall) may be formed in contact with a sidesurface of a gate electrode, or a silicide layer may be formed in one orboth of source and drain regions and the gate electrode. As a materialof the silicide layer, nickel, tungsten, molybdenum, cobalt, platinum,or the like can be used.

Further, an organic transistor in which a semiconductor layer is formedfrom an organic compound may be used for each of the transistors 310 a,310 b, 320 a, and 320 b included in the element-formation layer 335. Theelement-formation layer 335 including an organic transistor can beformed by a printing method, a droplet-discharging method, or the like.By forming the element-formation layer 335 by a printing method, adroplet-discharging method, or the like, a semiconductor device can bemanufactured at lower cost.

The element-formation layer 335, the memory elements 315 a and 315 b,and the conductive layer 343 serving as an antenna can be formed by anevaporation method, a sputtering method, a CVD method, a printingmethod, a droplet-discharging method, or the like as described above. Inaddition, different methods may be used depending on portions. Forexample, a transistor which requires high-speed operation can beprovided by forming a semiconductor layer of Si or the like over asubstrate and then crystallizing the semiconductor film by a heattreatment, and after that, another transistor serving as a switchingelement, which is an organic transistor, can be provided by a printingmethod or a droplet-discharging method, above the element-formationlayer.

In addition, a sensor connecting to a transistor may be provided. As thesensor, an element which detects properties such as temperature,humidity, illuminance, gas, gravity, pressure, sound (vibration), oracceleration by a physical or chemical means can be given. The sensor istypically formed from a semiconductor element such as a resistorelement, a capacitive coupling element, an inductive coupling element, aphotovoltaic element, a photoelectric conversion element, athermoelectric conversion element, a transistor, a thermistor, or adiode.

Next, one structural example of the semiconductor device in the casewhere a terminal portion is provided for a substrate provided with aplurality of elements and memory elements, and an antenna provided overanother substrate is connected to the terminal portion is described withreference to FIG. 17

FIG. 17 shows a passive matrix type semiconductor device. Anelement-formation layer 385 which includes a transistor portion 380having transistors 360 a and 360 b, a transistor portion 390 havingtransistors 370 a and 370 b, and insulating layers 351 a, 351 b, 358,359, 361, 366, and 384 is formed over a substrate 350, a memory elementportion 375 is provided over the element-formation layer 385, and aconductive layer 393 serving as antenna provided for a substrate 396 isprovided so as to be connected the element-formation layer 385. Notethat although the case where the memory element portion 375 or theconductive layer 393 serving as an antenna is provided above theelement-formation layer 385 is shown here, the present invention is notlimited to this structure. The memory element portion 375 may also beprovided below the element-formation layer 385 or in the same layer asthe element-formation layer 385, or the conductive layer 393 serving asan antenna may also be provided below the element-formation layer 385.

The memory element portion 375 includes memory elements 365 a and 365 b.The memory element 365 a is formed by stacking a partition wall(insulating layer) 357 a, a partition wall (insulating layer) 357 b, aninsulating layer (memory layer) 362 a and a second conductive layer 363a over a first conductive layer 356. The memory element 365 b is formedby stacking a partition wall (insulating layer) 357 b, a partition wall(insulating layer) 357 c, an insulating layer (memory layer) 362 b and asecond conductive layer 363 b over the first conductive layer 356. Aninsulating layer 364 serving as a protection film is formed to cover thesecond conductive layers 363 a and 363 b. The first conductive layer 356for forming the plural memory elements 365 a and 365 b is connected toeither a source electrode layer or a drain electrode layer of onetransistor 360 b. That is, the memory elements are connected to the sameone transistor. In addition, although the insulating layer (memorylayer) 362 a and the second conductive layer 363 a are separated fromthe insulating layer (memory layer) 362 b and the second conductivelayer 363 b so that each memory cell is separated from one another byproviding the partition walls (insulating layers) 357 a, 357 b, and 357c; they may also be formed over an entire surface if there is no fear ofinfluence of electric field in a lateral direction between neighboringmemory cells. Note that the memory elements 365 a and 365 b can beformed using any of the materials and manufacturing methods described inthe foregoing embodiment modes. Therefore, such a defective is notgenerated, that film peeling at an interface between layers occurs dueto a transfer step of elements to the second substrate after forming theelement over the first substrate. A glass substrate which can withstanda condition such as temperature in a manufacturing process is used, andthen elements are transferred to a second substrate, thereby a flexiblesubstrate such as a film can be used as the substrate 350. Accordingly,a memory element can be peeled and transferred in a good shape, andthus, a semiconductor device can be manufactured.

The substrate provided with the element-formation layer 385 and thememory element portion 375 is attached to the substrate 396 providedwith the conductive layer 393 serving as an antenna, by an adhesiveresin 395. The transistor 370 a formed in the element-formation layer385 and the conductive layer 393 are electrically connected via aconductive microparticle 394 contained in the resin 395, the conductivelayers 391 formed from the same layer as the first conductive layer 356,and the conductive layer 392 formed form the same layer as the secondconductive layers 363 a and 363 b. Alternatively, the substrate providedwith the element-formation layer 385 and the memory element portion 375may be attached to the substrate 396 provided with the conductive layer393 serving as an antenna, by a conductive adhesive such as silverpaste, copper paste, or carbon paste, or by solder bonding.

Further, the memory element portion may also be provided over thesubstrate provided with the conductive layer serving as an antenna.Further, a sensor connecting to a transistor may also be provided.

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate. The remaining layers on the element layer side afterpeeling the organic compound layer including a photocatalyst substanceare the organic compound layers 326 and 376 including a photocatalystsubstance.

Accordingly, since elements can be transferred to various types ofsubstrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used forthe substrate, and a semiconductor device can be manufactured at lowcost, in addition to having various functions suitable for applications.

Note that this embodiment mode can be freely combined with any of theforegoing embodiment modes. Further, the semiconductor devicemanufactured in this embodiment mode can be provided over a flexiblebase by being separated from a substrate in a peeling process andattached to a flexible substrate; thereby a flexible semiconductordevice can be formed. The flexible base corresponds to a film formedfrom polypropylene, polyester, vinyl, polyvinyl fluoride, vinylchloride, or the like; a paper formed of a fibrous material; a stackedfilm of a base material film (such as polyester, polyamide, an inorganicevaporation film, or paper) and an adhesive synthetic resin film (suchas an acrylic synthetic resin or an epoxy synthetic resin); or the like.The film is attached to an object by a heat treatment and a pressuretreatment. When a heat treatment and pressure treatment are performed tothe film, an adhesion layer provided in the outermost surface of thefilm or a layer provided in the outermost layer (not the adhesion layer)is melted by heat and attached by pressure. The adhesion layer may beprovided in the base but not necessarily. The adhesion layer correspondsto a layer containing an adhesive such as a thermosetting resin, anultraviolet curing resin, an epoxy resin adhesive, or a resin additive.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling are kept. Therefore, more highly reliablesemiconductor devices can be manufactured with high yield withoutcomplicating the apparatus and the process for manufacturing.

Embodiment Mode 8

A thin film transistor a light-emitting element can be formed andtransferred to various types of substrates using the present invention,and thus, a display device can be formed. When a light-emitting elementis used and an N-channel transistor is used as a transistor which drivesthe light-emitting element, light emitted from the light-emittingelement performs any one of bottom emission, top emission, and dualemission. Here, a stacked structure of the light-emitting elementcorresponding to each emission type will be described with reference toFIGS. 20A to 20C.

Further, in this embodiment mode, channel protection thin filmtransistors 461, 471, and 481 formed according to the present inventionare used. The thin film transistor 481 is provided over alight-transmitting substrate 480 and includes a gate electrode layer493, a gate insulating film 497, a semiconductor layer 494, n-typesemiconductor layers 495 a and 495 b, source or drain electrode layers487 a and 487 b, and a channel protective layer 496. In this embodimentmode, a silicon film having an amorphous structure is used as thesemiconductor layer, and an n-type semiconductor layer is used as asemiconductive layer having one conductivity. Instead of forming then-type semiconductor layer, a plasma treatment using PH₃ gas may beconducted so as to give the semiconductor layer a conductivity. Thesemiconductor layer is not limited to that in this embodiment mode, anda crystalline semiconductor layer may also be used, as long as anorganic compound layer including a photocatalyst substance can withstanda process temperature. In the case of using a crystalline semiconductorlayer such as polysilicon, an impurity element may be introduced (added)into the crystalline semiconductor layer so as to form an impurityregion having one conductivity, without forming the semiconductor layerhaving one conductivity. Further, an organic semiconductor such aspentacene can be used. When such an organic semiconductor is selectivelyformed by a droplet-discharging method or the like, an etching processinto a desired shape can be simplified.

According to the present invention, by dispersing a photocatalystsubstance in an organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate. The remaining layers on the element layer side afterpeeling the organic compound layer including a photocatalyst substanceare the organic compound layers 499, 469, and 479 including aphotocatalyst substance. The substrates 480, 460, and 470 attached tothe element layer side may be formed from materials which can blocklight in a wavelength which activates the photocatalyst substance leftin the element layer.

Accordingly, since elements can be transferred to various types ofsubstrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used forthe substrate, and a display device can be manufactured at low cost, inaddition to having various functions suitable for applications.

The channel protective layer 496 may be formed by a droplet-dischargingmethod using polyimide, polyvinyl alcohol, or the like. As a result, anexposure process can be omitted. The channel protective layer can be afilm formed from one or a plurality of an inorganic material (siliconoxide, silicon nitride, silicon oxynitride, silicon nitride oxide, orthe like), a photosensitive or non-photosensitive organic material (anorganic resin material) (polyimide, acrylic, polyamide, polyimide amide,a resist, benzocyclobutene, or the like), a material which has a lowdielectric constant, or the like; a stack of such films; or the like. Inaddition, a siloxane resin may be used. It is to be noted that thesiloxane resin corresponds to a resin including a Si—O—Si bond. Siloxanehas a skeleton structure of a bond of silicon (Si) and oxygen (O). Asfor a substituent, an organic group containing at least hydrogen (suchas an alkyl group or aromatic hydrocarbon) is used. As for asubstituent, a fluoro group may be used. Further, as for a substituent,an organic group containing at least hydrogen and a fluoro group may beused. As a manufacturing method, a vapor phase growth method such asplasma CVD or thermal CVD, or sputtering can be used. Adroplet-discharging method, a printing method (a method of forming apattern, such as screen printing or offset printing), a dispenser methodcan also be used. An organic film or an inorganic film (a SOG film, orthe like) obtained by a coating method can also be used.

First, the case where light is emitted toward a light-transmittingsubstrate 480, in other words, the case of bottom emission, will bedescribed with reference to FIG. 20A. In this case, a first electrodelayer 484 is formed to be in contact with the source or drain electrodelayer 487 b so as to be electrically connected to the thin filmtransistor 481, and over the first electrode layer 484, anelectroluminescent layer 485 and a second electrode layer 486 aresequentially stacked. Next, the case where light is emitted to the sideopposite to a light-transmitting substrate 460, in other words, the caseof top emission, will be described with reference to FIG. 20B. The thinfilm transistor 461 can be formed in a similar manner to the abovedescribed thin film transistor.

A source or drain electrode layer 462 which is electrically connected tothe thin film transistor 461, a first electrode layer 463, anelectroluminescent layer 464, and a second electrode layer 465 aresequentially stacked. In this structure, even when light passes throughthe first electrode layer 463, the light is reflected on the source ordrain electrode layer 462, and emitted to the opposite side to thelight-transmitting substrate 460. Note that in this structure, it isunnecessary that the first electrode layer 463 is formed from alight-transmitting material. Lastly, the case where light is emittedtoward both a light-transmitting substrate 470 side and an oppositeside, in other words, the case of dual emission, is described withreference to FIG. 20C. The thin film transistor 471 is also a channelprotection thin film transistor like the thin film transistor 481, andcan be formed in the same manner as the thin film transistor 481. Afirst electrode layer 472 is formed to be in contact with the source ordrain electrode layer 475 so as to be electrically connected to the thinfilm transistor 471, and over the first electrode layer 472, anelectroluminescent layer 473 and a second electrode layer 474 aresequentially stacked. At this time, when the first electrode layer 472and the second electrode layer 474 are both formed from materials havinglight transmitting properties, or formed to have such thicknesses thatcan transmit light, the dual emission is realized.

Structures of the light-emitting element applicable to this embodimentmode will be explained in detail with reference to FIGS. 18A to 18D.

FIGS. 18A to 18D each show an example of an element structure of alight-emitting element, which is a light-emitting element where anelectroluminescent layer 860, which is formed by mixing an organiccompound and an inorganic compound, is sandwiched between a firstelectrode layer 870 and a second electrode layer 850. As shown in thefigure, the electroluminescent layer 860 includes a first layer 804, asecond layer 803, and a third layer 802, and there is a great featureespecially in the first layer 804 and the third layer 802.

First, the first layer 804 is a layer which has a function oftransporting holes to the second layer 803, and includes at least afirst organic compound and a first inorganic compound showing anelectron-accepting property to the first organic compound. It isimportant that the first organic compound and the first inorganiccompound are not only simply mixed but also the first inorganic compoundhas an electron-accepting property with respect to the first organiccompound. This structure generates many hole-carriers in the firstorganic compound which has originally almost no inherent carriers, andan hole-injecting and an hole-transporting property which are highlyexcellent can be obtained.

Therefore, as for the first layer 804, not only advantageous effect thatis considered to be obtained by mixing an inorganic compound (such asimprovement in heat resistance) but also excellent conductivity (inparticular, a hole-injecting property and a hole-transporting propertyin the first layer 804) can also be obtained. This excellentconductivity is advantageous effect, which cannot be obtained in aconventional hole-transporting layer in which an organic compound and aninorganic compound that do not electronically interact with each otherare simply mixed. This advantageous effect can make a drive voltagelower than conventionally. In addition, since the first layer 804 can bemade thick without causing increase in a drive voltage, short circuit ofthe element due to a dust or the like can be suppressed.

However, it is preferable to use a hole-transporting organic compound asthe first organic compound because hole-carriers are generated in thefirst organic compound as described above. Examples of thehole-transporting organic compound include phthalocyanine (abbreviation:H₂Pc), copper phthalocyanine (abbreviation: CuPc), vanadylphthalocyanine (abbreviation: VOPc),4,4′,4″-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA),4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine(abbreviation: MTDATA), 1,3,5-tris[N,N-di(m-tolyl)amino]benzene(abbreviation: m-MTDAB),N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine(abbreviation: TPD), 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(abbreviation: NPB),4,4′-bis{N-[4-di(m-tolyl)amino]phenyl-N-phenylamino}biphenyl(abbreviation: DNTPD), 4,4′,4″-tris(N-carbazolyl)triphenylamine(abbreviation: TCTA), and the like. However, the present invention isnot limited to these examples. In addition, among the compoundsdescribed above, an aromatic amine compound typified by TDATA, MTDATA,m-MTDAB, TPD, NPB, DNTPD, and TCTA can easily generate hole-carriers,and are suitable compound groups for the first organic compound.

On the other hand, the first inorganic compound may be any material aslong as the material can easily accept electrons from the first organiccompound, and various kinds of metal oxides and metal nitrides can beused. Any of transition metal oxides that belong to Groups 4 to 12 ofthe periodic table is preferable because an electron-accepting propertyis easily provided. Specifically, for example, titanium oxide, zirconiumoxide, vanadium oxide, molybdenum oxide, tungsten oxide, rhenium oxide,ruthenium oxide, zinc oxide, and the like can be given. In addition,among the metal oxides described above, any of transition metal oxidesthat belong to Groups 4 to 8 of the periodic table mostly has a highelectron-accepting property, which is a preferable group. In particular,vanadium oxide, molybdenum oxide, tungsten oxide, and rhenium oxide arepreferable because they can be formed by vacuum evaporation and can beeasily used.

Note that the first layer 804 may be formed by stacking a plurality oflayers each including a combination of the organic compound and theinorganic compound as described above, or may further include anotherorganic compound or inorganic compound.

Next, the third layer 802 will be explained. The third layer 802 is alayer which has a function of transporting electrons to the second layer803, and includes at least a third organic compound and a thirdinorganic compound showing an electron-donating property to the thirdorganic compound. It is important that the third organic compound andthe third inorganic compound are not only simply mixed but also thethird inorganic compound has an electron-denoting property with respectto the third organic compound. This structure generates manyelectron-carriers in the third organic compound which has originallyalmost no inherent carriers, and an electron-injecting and anelectron-transporting property which are highly excellent can beobtained.

Therefore, as for the third layer 802, not only advantageous effect thatis considered to be obtained by mixing an inorganic compound (such asimprovement in heat resistance) but also excellent conductivity (inparticular, an electron-injecting property and an electron-transportingproperty in the third layer 802) can also be obtained. This excellentconductivity is advantageous effect, which cannot be obtained in aconventional electron-transporting layer in which an organic compoundand an inorganic compound that do not electronically interact with eachother are simply mixed. This advantageous effect can make a drivevoltage lower than conventionally. In addition, since the third layer802 can be made thick without causing increase in a drive voltage, shortcircuit of the element due to a dust or the like can be suppressed.

However, it is preferable to use an electron-transporting organiccompound as the third organic compound because electron-carriers aregenerated in the third organic compound as described above. Examples ofthe electron-transporting organic compound includetris(8-quinolinolato)aluminum (abbreviation: Alq₃),tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Almq₃),bis(10-hydroxybenzo[h]-quinolinato)beryllium (abbreviation: BeBq₂),bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (abbreviation:BAlq), bis[2-(2′-hydroxyphenyl)benzoxazolato]zinc (abbreviation:Zn(BOX)₂), bis[2-(2′-hydroxyphenyl)benzothiazolato]zinc (abbreviation:Zn(BTZ)₂), bathophenanthroline (abbreviation: BPhen), bathocuproin(abbreviation: BCP),2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation:PBD), 1,3-bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene(abbreviation: OXD-7),2,2′,2″-(1,3,5-benzenetriyl)-tris(1-phenyl-1H-benzimidazole)(abbreviation: TPBI),3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: TAZ),3-(4-biphenylyl)-4-(4-ethylphenyl)-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: p-EtTAZ), and the like. However, the present invention isnot limited to these examples. In addition, among the compoundsmentioned above, chelate metal complexes having a chelate ligandincluding an aromatic ring typified by Alq₃, Almq₃, BeBq₂, BAlq,Zn(BOX)₂, and Zn(BTZ)₂, organic compounds having a phenanthrolineskeleton typified by BPhen and BCP, and organic compounds having anoxadiazole skeleton typified by PBD and OXD-7 can easily generateelectron-carriers, and are suitable compound groups for the thirdorganic compound.

On the other hand, the third inorganic compound may be any material aslong as the material can easily donate electrons to the third organiccompound, and various kinds of a metal oxide and a metal nitride can beused. An alkali metal oxide, an alkaline-earth metal oxide, a rare-earthmetal oxide, an alkali metal nitride, an alkaline-earth metal nitride,and a rare-earth metal nitride are preferable because anelectron-donating property is easily provided. Specifically, forexample, lithium oxide, strontium oxide, barium oxide, erbium oxide,lithium nitride, magnesium nitride, calcium nitride, yttrium nitride,lanthanum nitride, and the like can be given. In particular, lithiumoxide, barium oxide, lithium nitride, magnesium nitride, and calciumnitride are preferable because they can be formed by vacuum evaporationand can be easily used.

Note that the third layer 802 may be formed by stacking a plurality oflayers each including a combination of the organic compound and theinorganic compound as described above, or may further include anotherorganic compound or inorganic compound.

Then, the second layer 803 will be explained. The second layer 803 is alayer which has a function of emitting light, and includes a secondorganic compound that has a light-emitting property. A second inorganiccompound may also be included. The second layer 803 can be formed byusing various light-emitting organic compounds and inorganic compounds.However, since it is believed to be hard to flow a current through thesecond layer 803 as compared with the first layer 804 or the third layer802, the thickness of the second layer 803 is preferably approximately10 nm to 100 nm.

There are no particular limitations on the second organic compound aslong as it is a light-emitting organic compound. Examples of the secondorganic compound include, for example, 9,10-di(2-naphthyl)anthracene(abbreviation: DNA), 9,10-di(2-naphthyl)-2-tert-butylanthracene(abbreviation: t-BuDNA), 4,4′-bis(2,2-diphenylvinyl)biphenyl(abbreviation: DPVBi), coumarin 30, coumarin 6, coumarin 545, coumarin545T, perylene, rubrene, periflanthene,2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP),9,10-diphenylanthracene (abbreviation: DPA), 5,12-diphenyltetracene,4-(dicyanomethylene)-2-methyl-[p-(dimethylamino)styryl]-4H-pyran(abbreviation: DCM1),4-(dicyanomethylene)-2-methyl-6-[2-(julolidin-9-yl)ethenyl]-4H-pyran(abbreviation: DCM2),4-(dicyanomethylene)-2,6-bis[p-(dimethylamino)styryl]-4H-pyran(abbreviation: BisDCM), and the like. In addition, it is also possibleto use a compound capable of emitting phosphorescence such asbis[2-(4′,6′-difluorophenyl)pyridinato-N,C²′]iridium(picolinate)(abbreviation: FIrpic),bis{2-[3′,5′-bis(trifluoromethyl)phenyl]pyridinato-N,C²′}iridium(picolinate)(abbreviation: Ir(CF₃ppy)₂(Pic)),tris(2-phenylpyridinato-N,C^(2′))iridium (abbreviation: Ir(ppy)₃),bis(2-phenylpyridinato-N,C^(2′))iridium(acetylacetonate) (abbreviation:Ir(ppy)₂(acac)),bis[2-(2′-thienyl)pyridinato-N,C^(3′)]iridium(acetylacetonate)(abbreviation: Ir(thp)₂(acac)),bis(2-phenylquinolinato-N,C^(2′))iridium(acetylacetonate) (abbreviation:Ir(pq)₂(acac)), orbis[2-(2′-benzothienyl)pyridinato-N,C^(3′)]iridium(acetylacetonate)(abbreviation: Ir(btp)₂(acac)).

Further, a triplet excitation light-emitting material containing a metalcomplex or the like may be used for the second layer 803 in addition toa singlet excitation light-emitting material. For example, among pixelsemitting red, green, and blue light, a pixel emitting red light whoseluminance is reduced by half in a relatively short time is formed byusing a triplet excitation light-emitting material and the other pixelsare formed by using a singlet excitation light-emitting material. Atriplet excitation light-emitting material has a feature of favorablelight-emitting efficiency and less power consumption to obtain the sameluminance. In other words, when a triplet excitation light-emittingmaterial is used for a red pixel, only small amount of current needs tobe applied to a light-emitting element; thus, reliability can beimproved. A pixel emitting red light and a pixel emitting green lightmay be formed by using a triplet excitation light-emitting material anda pixel emitting blue light may be formed by using a singlet excitationlight-emitting material to achieve low power consumption as well. Lowpower consumption can be further achieved by forming a light-emittingelement emitting green light that has high visibility for human eyes byusing a triplet excitation light-emitting material.

The second layer 803 may include not only the second organic compound asdescribed above, which produces light-emission, but also another organiccompound which is added thereto. Examples of organic compounds that canbe added include TDATA, MTDATA, m-MTDAB, TPD, NPB, DNTPD, TCTA, Alq₃,Almq₃, BeBq₂, BAlq, Zn(BOX)₂, Zn(BTZ)₂, BPhen, BCP, PBD, OXD-7, TPBI,TAZ, p-EtTAZ, DNA, t-BuDNA, and DPVBi, which are mentioned above, andfurther, 4,4′-bis(N-carbazolyl)biphenyl (abbreviation: CBP),1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), and thelike. However, the present invention is not limited to these examples.It is preferable that the organic compound, which is added in additionto the second organic compound, has larger excitation energy than thatof the second organic compound and be added by the larger amount thanthe second organic compound in order to make the second organic compoundemit light efficiently (which makes it possible to prevent concentrationquenching of the second organic compound). Alternatively, as anotherfunction, the added organic compound may emit light along with thesecond organic compound (which makes it possible to emit white light orthe like).

The second layer 803 may have a structure to perform color display byproviding each pixel with a light-emitting layer having a differentemission wavelength range. Typically, a light-emitting layercorresponding to each color of R (red), G (green), and B (blue) isformed. Also in this case, color purity can be improved and a pixelportion can be prevented from having a mirror surface (reflection) byproviding the light-emission side of the pixel with a filter whichtransmits light of an emission wavelength range of the light. Byproviding a filter, a circularly polarizing plate or the like that hasbeen conventionally required can be omitted, and further, the loss oflight emitted from the light-emitting layer can be eliminated. Further,change in a color tone, which occurs when a pixel portion (displayscreen) is obliquely seen, can be reduced.

Either a low-molecular organic light-emitting material or ahigh-molecular organic light-emitting material may be used for amaterial of the second layer 803. A high-molecular organiclight-emitting material is physically stronger as compared with alow-molecular material and is superior in durability of the element. Inaddition, a high-molecular organic light-emitting material can be formedby coating; therefore, the element can be relatively easilymanufactured.

The emission color is determined depending on a material forming thelight-emitting layer; therefore, a light-emitting element which exhibitsdesired light-emission can be formed by selecting an appropriatematerial for the light-emitting layer. As a high-molecularelectroluminescent material which can be used for forming alight-emitting layer, a polyparaphenylene-vinylene-based material, apolyparaphenylene-based material, a polythiophene-based material, or apolyfluorene-based material can be used.

As the polyparaphenylene-vinylene-based material, a derivative ofpoly(paraphenylenevinylene) [PPV] such aspoly(2,5-dialkoxy-1,4-phenylenevinylene) [RO-PPV],poly(2-(2′-ethyl-hexoxy)-5-methoxy-1,4-phenylenevinylene) [MEH-PPV], orpoly(2-(dialkoxyphenyl)-1,4-phenylenevinylene) [ROPh-PPV] can be given.As the polyparaphenylene-based material, a derivative ofpolyparaphenylene [PPP] such as poly(2,5-dialkoxy-1,4-phenylene)[RO-PPP] or poly(2,5-dihexoxy-1,4-phenylene) can be given. As thepolythiophene-based material, a derivative of polythiophene [PT] such aspoly(3-alkylthiophene) [PAT], poly(3-hexylthiophen) [PHT],poly(3-cyclohexylthiophen) [PCHT], poly(3-cyclohexyl-4-methylthiophene)[PCHMT], poly(3,4-dicyclohexylthiophene) [PDCHT],poly[3-(4-octylphenyl)-thiophene] [POPT], orpoly[3-(4-octylphenyl)-2,2bithiophene] [PTOPT] can be given. As thepolyfluorene-based material, a derivative of polyfluorene [PF] such aspoly(9,9-dialkylfluorene) [PDAF] or poly(9,9-dioctylfluorene) [PDOF] canbe given.

The second inorganic compound may be any inorganic compound as long aslight-emission of the second organic compound is not easily quenched bythe inorganic compound, and various kinds of metal oxides and metalnitrides can be used. In particular, a metal oxide having a metal thatbelongs to Group 13 or 14 of the periodic table is preferable becauselight-emission of the second organic compound is not easily quenched,and specifically, aluminum oxide, gallium oxide, silicon oxide, andgermanium oxide are preferable. However, the second inorganic compoundis not limited thereto.

Note that the second layer 803 may be formed by stacking a plurality oflayers each including a combination of the organic compound and theinorganic compound as described above, or may further include anotherorganic compound or inorganic compound. A layer structure of thelight-emitting layer can be changed, and an electrode layer forinjecting electrons may be provided or a light-emitting material may bedispersed, instead of providing no specific electron-injecting region orlight-emitting region. Such a change can be permitted unless it departsfrom the spirit of the present invention.

A light-emitting element formed by using the above materials emits lightby being forwardly biased. A pixel of a display device which is formedby using a light-emitting element can be driven by a simple matrix(passive matrix) mode or an active matrix mode. In any case, each pixelemits light by applying a forward bias thereto at a specific timing;however, the pixel is in a non-emitting state for a certain period.Reliability of a light-emitting element can be improved by applying areverse bias in the non-emitting time. In a light-emitting element,there is a deterioration mode in which emission intensity is decreasedunder constant driving conditions or a deterioration mode in which anon-light-emitting region is enlarged in the pixel and luminance isapparently decreased. However, progression of deterioration can beslowed down by alternating current driving where bias is appliedforwardly and reversely; thus, reliability of a light-emitting displaydevice can be improved. Additionally, either digital driving or analogdriving can be applied.

A color filter (colored layer) may be formed over a sealing substrate.The color filter (colored layer) can be formed by an evaporation methodor a droplet-discharging method. High-resolution display can beperformed with the use of the color filter (colored layer). This isbecause a broad peak can be modified to be sharp in an emission spectrumeach of R, G and B by the color filter (colored layer).

Full color display can be performed by forming a material emitting lightof a single color and combining with a color filter or a colorconversion layer. Preferably, the color filter (colored layer) or thecolor conversion layer is formed over, for example, a second substrate(a sealing substrate) and attached to a substrate.

Needless to say, display of a single color emission may also beperformed. For example, an area color type display device may bemanufactured by using single color emission. The area color type issuitable for a passive matrix display portion, and can mainly displaycharacters and symbols.

Materials of the first electrode layer 870 and the second electrodelayer 850 are required to be selected considering the work function. Thefirst electrode layer 870 and the second electrode layer 850 can beeither an anode or a cathode depending on the pixel structure. In a casewhere polarity of a driving thin film transistor is a P-channel type,the first electrode layer 870 preferably serves as an anode and thesecond electrode layer 850 preferably serves as a cathode as shown inFIG. 18A. In a case where polarity of the driving thin film transistoris an N-channel type, the first electrode layer 870 preferably serves asa cathode and the second electrode layer 850 preferably serves as ananode as shown in FIG. 18B. Materials that can be used for the firstelectrode layer 870 and the second electrode layer 850 will bedescribed. It is preferable to use a material having a high workfunction (specifically, a material having a work function of 4.5 eV ormore) for one of the first electrode layer 870 and the second electrodelayer 850, which serves as an anode, and a material having a lower workfunction (specifically, a material having a work function of 3.5 eV orless) for the other electrode layer which serves as a cathode. However,since the first layer 804 is superior in a hole-injecting property and ahole-transporting property and the third layer 802 is superior in anelectron-injecting property and an electron transporting property, bothof the first electrode layer 870 and the second electrode layer 850 arescarcely restricted by a work function, and various materials can beused.

The light-emitting elements shown in FIGS. 18A and 18B have a structurewhere light is extracted from the first electrode layer 870; thus, thesecond electrode layer 850 does not necessarily have alight-transmitting property. The second electrode layer 850 ispreferably formed from a film mainly containing an element of Ti, Ni, W,Cr, Pt, Zn, Sn, In, Ta, Al, Cu, Au, Ag, Mg, Ca, Li and Mo, or an alloymaterial or a compound material containing the element as its maincomponent such as TiN, TiSi_(X)N_(Y), WSi_(X), WN_(X), WSi_(X)N_(Y), orNbN; or a stacked film thereof in a total film thickness of 100 nm to800 nm.

The second electrode layer 850 can be formed by an evaporation method, asputtering method, a CVD method, a printing method, a dispenser method,a droplet-discharging method, or the like.

In addition, when the second electrode layer 850 is formed by using alight-transmitting conductive material similarly to the material usedfor the first electrode layer 870, light can also be extracted from thesecond electrode layer 850, and a dual emission structure can beobtained, in which light emitted from the light-emitting element isemitted from both the first electrode layer 870 side and the secondelectrode layer 850 side.

Note that the light-emitting element of the present invention can havevariations by changing types of the first electrode layer 870 and thesecond electrode layer 850.

FIG. 18B shows a case where the third layer 802, the second layer 803,and the first layer 804 are sequentially provided from the firstelectrode layer 870 side in the electroluminescent layer 860.

As described above, in the light-emitting element applicable to thepresent invention, the layer interposed between the first electrodelayer 870 and the second electrode layer 850 is formed from theelectroluminescent layer 860 including a layer in which an organiccompound and an inorganic compound are combined. The light-emittingelement is an organic-inorganic composite light-emitting elementprovided with layers (that is, the first layer 804 and the third layer802) that provide functions called a high carrier-injecting property andcarrier-transporting property by mixing an organic compound and aninorganic compound. Such functions as high carrier-injecting propertyand carrier-transporting property are not obtainable from only eitherone of the organic compound or the inorganic compound. In addition, thefirst layer 804 and the third layer 802 are particularly required to belayers in which an organic compound and an inorganic compound arecombined when provided on the first electrode layer 870 side, and mayalso contain only one of an organic compound and an inorganic compoundwhen provided on the second electrode layer 850 side.

Further, various methods can be used as a method for forming theelectroluminescent layer 860, which is a layer in which an organiccompound and an inorganic compound are mixed. For example, the methodsinclude a co-evaporation method of evaporating both an organic compoundand an inorganic compound by resistance heating. Besides, forco-evaporation, an inorganic compound may be evaporated by an electronbeam (EB) while evaporating an organic compound by resistance heating.Moreover, the methods also include a method of sputtering an inorganiccompound while evaporating an organic compound by resistance heating todeposit the both at the same time. In addition, the electroluminescentlayer may also be formed by a wet method.

In the same manner, for the first electrode layer 870 and the secondelectrode layer 850, evaporation by resistance heating, EB evaporation,sputtering, a wet method, or the like can be used.

In FIG. 18C, an electrode layer having reflectivity is used for thefirst electrode layer 870, and an electrode layer having alight-transmitting property is used for the second electrode layer 850in the structure of FIG. 18A. Light emitted from the light-emittingelement is reflected on the first electrode layer 870, transmittedthrough the second electrode layer 850, and is emitted to outside. Inthe same manner, in FIG. 18D, an electrode layer having reflectivity isused for the first electrode layer 870, and an electrode layer having alight-transmitting property is used for the second electrode layer 850in the structure of FIG. 18B. Light emitted from the light-emittingelement is reflected on the first electrode layer 870, transmittedthrough the second electrode layer 850, and is emitted to outside.

This embodiment mode can be freely combined with the embodiment modesdescribed above.

Embodiment Mode 9

Embodiment Mode 9 will explain another structure applicable to alight-emitting element of the present invention with reference to FIGS.37A to 37C and FIGS. 38A to 38C.

A light-emitting element utilizing electroluminescence is distinguishedby whether a light-emitting material is an organic compound or aninorganic compound. Generally, the former is referred to as an organicEL element, whereas the latter is referred to as an inorganic ELelement.

The inorganic EL element is classified into a dispersion type inorganicEL element and a thin film type inorganic EL element, depending on itselement structure. The former and the latter are different in that theformer has an electroluminescent layer where particles of alight-emitting material are dispersed in a binder, whereas the latterhas an electroluminescent layer formed from a thin film of alight-emitting material. However, the former and the latter have incommon that they need an electron accelerated by a high electric field.Note that, as a mechanism of luminescence that is obtained, there aredonor-acceptor recombination type luminescence that utilizes a donorlevel and an acceptor level, and localized type luminescence thatutilizes inner-shell electron transition of a metal ion. Generally, inmany cases, donor-acceptor recombination type luminescence is employedin a dispersion type inorganic EL element, whereas localized typeluminescence is employed in a thin film type inorganic EL element.

The light-emitting material, which can be used in the present invention,includes a host material and an impurity element to be a light-emissioncenter. By changing an impurity element that is contained, lightemission of various colors can be obtained. As a manufacturing method ofthe light-emitting material, various methods such as a solid phasemethod and a liquid phase method (a coprecipitation method) can be used.In addition, an evaporative decomposition method, a double decompositionmethod, a method by heat decomposition reaction of a precursor, areversed micelle method, a method in which these methods are eachcombined with high temperature baking, a liquid phase method such as alyophilization method, or the like can also be used.

A solid phase method is a method by which a host material, and animpurity element or a compound containing an impurity element aremeasured, mixed in a mortar, heated in an electric furnace, and baked tobe reacted to contain the impurity element in the host material. Thebaking temperature is preferably 700° C. to 1500° C. This is because thesolid reaction does not progress when the temperature is too low, andthe host material is decomposed when the temperature is too high. Thebaking may be performed in a powder state; however, it is preferable toperform the baking in a pellet state. Although the baking has to beperformed at a comparatively high temperature, the solid phase method iseasy; thus, the solid phase method is suitable for mass production withhigh productivity.

A liquid phase method (a coprecipitation method) is a method by which ahost material or a compound containing a host material is reacted in asolution with an impurity element or a compound containing an impurityelement, dried, and then baked. Particles of a light-emitting materialare distributed uniformly, and the reaction can progress even when thegrain size is small and the baking temperature is low.

As a host material used for a light-emitting material, a hydrosulfide,an oxide, or a nitride can be used. As a hydrosulfide, for example, zincsulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttriumsulfide (Y₂S₃), gallium sulfide (Ga₂S₃), strontium sulfide (SrS), bariumsulfide (BaS), or the like can be used. As an oxide, for example, zincoxide (ZnO), yttrium oxide (Y₂O₃), or the like can be used. As anitride, for example, aluminum nitride (AlN), gallium nitride (GaN),indium nitride (InN), or the like can be used. Further, zinc selenide(ZnSe), zinc telluride (ZnTe), or the like can also be used, and athree-component mixed crystal such as calcium sulfide-gallium (CaGa₂S₄),strontium sulfide-gallium (SrGa₂S₄), or barium sulfide-gallium (BaGa₂S₄)may also be used.

As a light-emission center of localized type luminescence, manganese(Mn), copper (Cu), samarium (Sm), terbium (Th), erbium (Er), thulium(Tm), europium (Eu), cerium (Ce), praseodymium (Pr), or the like can beused. Note that a halogen element such as fluorine (F) or chlorine (Cl)may be added as charge compensation.

On the other hand, as a light-emission center of donor-acceptorrecombination type luminescence, a light-emitting material containing afirst impurity element which forms a donor level and a second impurityelement which forms an acceptor level can be used. As the first impurityelement, for example, fluorine (F), chlorine (Cl), aluminum (Al), or thelike can be used for example. As the second impurity element, forexample, copper (Cu), silver (Ag), or the like can be used.

In a case of synthesizing the light-emitting material of donor-acceptorrecombination type luminescence by a solid phase method, a hostmaterial, the first impurity element or a compound containing the firstimpurity element, and the second impurity element or a compoundcontaining the second impurity element are each measured, mixed in amortar, heated in an electric furnace, and baked. As the host material,the above described host materials can be used. As the first impurityelement or the compound containing the first impurity element, forexample, fluorine (F), chlorine (Cl), aluminum sulfate (Al₂S₃), or thelike can be used. As the second impurity element or the compoundcontaining the second impurity element, for example, copper (Cu), silver(Ag), copper sulfide (Cu₂S), silver sulfide (Ag₂S), or the like can beused. The baking temperature is preferably 700° C. to 1500° C. This isbecause the solid reaction does not progress when the temperature is toolow, and the host material is decomposed when the temperature is toohigh. The baking may be performed in a powder state; however, it ispreferable to perform the baking in a pellet state.

As the impurity element in the case of utilizing solid reaction, acompound containing the first impurity element and the second impurityelement may be combined. In this case, since the impurity element iseasily diffused and solid reaction progresses easily, a uniformlight-emitting material can be obtained. Further, since a surplusimpurity element does not enter, a light-emitting material having highpurity can be obtained. As the compound containing the first impurityelement and the second impurity element, for example, copper chloride(CuCl), silver chloride (AgCl), or the like can be used.

Note that a concentration of these impurity elements may be 0.01 to 10atom % with respect to the host material, and the concentration ispreferably 0.05 to 5 atom %.

In the case of a thin film type inorganic EL element, anelectroluminescent layer is a layer containing the above light-emittingmaterial, which can be formed by a vacuum evaporation method such as aresistance heating evaporation method or an electron beam evaporation(EB evaporation) method, a physical vapor deposition (PVD) method suchas a sputtering method, a chemical vapor deposition (CVD) method such asan organic metal CVD method or a hydride transport low-pressure CVDmethod, an atomic layer epitaxy method (ALE), or the like.

FIGS. 37A to 37C each show an example of a thin film type inorganic ELelement that can be used as a light-emitting element. In FIGS. 37A to37C, the light-emitting elements each include a first electrode layer50, an electroluminescent layer 52, and a second electrode layer 53.

The light-emitting elements shown in FIGS. 37B and 37C each have astructure where an insulating layer is formed between the electrodelayer and the electroluminescent layer in the light-emitting element ofFIG. 37A. The light-emitting element shown in FIG. 37B has an insulatinglayer 54 between the first electrode layer 50 and the electroluminescentlayer 52. The light-emitting element shown in FIG. 37C has an insulatinglayer 54 a between the first electrode layer 50 and theelectroluminescent layer 52, and an insulating layer 54 b between thesecond electrode layer 53 and the electroluminescent layer 52. In thismanner, the insulating layer may be provided between theelectroluminescent layer and one electrode layer of a pair of electrodelayers that sandwiches the electroluminescent layer, or may be providedbetween the electroluminescent layer and the both electrode layers.Moreover, the insulating layer may be a single layer or a stacked layerincluding a plurality of layers.

In addition, although the insulating layer 54 is provided to be incontact with the first electrode layer 50 in FIG. 37B, the insulatinglayer 54 may be provided to be in contact with the second electrodelayer 53 by reversing the order of the insulating layer and theelectroluminescent layer.

In the case of a dispersion type inorganic EL element, anelectroluminescent layer where particles of a light-emitting materialare dispersed in a binder is formed. When particles with desired grainsizes cannot be obtained enough by a manufacturing method of alight-emitting material, the electroluminescent layer may be formed in aparticle state by being crushed with a mortar or the like. A binderrefers to a substance for fixing a light-emitting material in a particlestate in a dispersed state to keep a shape as an electroluminescentlayer. The light-emitting material is uniformly dispersed and fixed inan electroluminescent layer by the binder.

In the case of a dispersion type inorganic EL element, as a method forforming an electroluminescent layer, a droplet-discharging method, aprinting method (such as screen printing or offset printing), which canselectively form an electroluminescent layer, a coating method such as aspin coating method, a dipping method, a dispenser method, or the likecan be used. There are no particular limitations of the film thicknessof the electroluminescent layer; however, the film thickness of 10 nm to1000 nm is preferable. In addition, in the electroluminescent layercontaining a light-emitting material and a binder, a ratio of thelight-emitting material is preferably set to be greater than or equal to50 wt % and less than or equal to 80 wt %.

FIGS. 38A to 38C each show an example of a dispersion type inorganic ELelement that can be used as a light-emitting element. In FIG. 38A, thelight-emitting element has a stacked structure of a first electrodelayer 60, an electroluminescent layer 62, and a second electrode layer63, where a light-emitting material 61 held by a binder is included inthe electroluminescent layer 62.

As the binder that can be used in this embodiment mode, an organicmaterial or an inorganic material can be used, and a mixed material ofan organic material and an inorganic material may also be used. As theorganic material, a resin such as a polymer, polyethylene,polypropylene, a polystyrene based resin, a silicone resin, an epoxyresin, or vinylidene fluoride having a comparatively high dielectricconstant like a cyanoethyl cellulose based resin can be used. Inaddition, a heat-resistant high molecular compound such as aromaticpolyamide or polybenzimidazole, or a siloxane resin may be used.Siloxane corresponds to a resin containing a Si—O—Si bond. Siloxane iscomposed of a skeleton structure formed by the bond of silicon (Si) andoxygen (O). As a substituent thereof, an organic group containing atleast hydrogen (such as an alkyl group or aromatic hydrocarbon) is used.In addition, a fluoro group may be used as the substituent. Further, anorganic group containing at least hydrogen and a fluoro group may beused as the substituent. Moreover, a vinyl resin such as polyvinylalcohol or polyvinyl butyral, or a resin material such as a phenolresin, a novolac resin, an acrylic resin, a melamine resin, a urethaneresin, an oxazole resin (polybenzoxazole) may also be used. For example,a photocurable resin or the like can be used. A dielectric constant canalso be adjusted by appropriately mixing these resins withmicroparticles having a high dielectric constant such as barium titanate(BaTiO₃) or strontium titanate (SrTiO₃).

As the inorganic material, a material of silicon oxide (SiO_(x)),silicone nitride (SiN_(x)), silicon containing oxygen and nitrogen,aluminum nitride (AlN), aluminum containing oxygen and nitrogen oraluminum oxide (Al₂O₃), titanium oxide (TiO₂), BaTiO₃, SrTiO₃, leadtitanate (PbTiO₃), potassium niobate (KNbO₃), lead niobate (PbNbO₃),tantalum oxide (Ta₂O₅), barium tantalate (BaTa₂O₆), lithium tantalate(LiTaO₃), yttrium oxide (Y₂O₃), zirconium oxide (ZrO₂), ZnS and othersubstances containing an inorganic material can be used. By mixing anorganic material with an inorganic material having a high dielectricconstant (by adding or the like), a dielectric constant of anelectroluminescent layer including a light-emitting material and abinder can be further controlled and the dielectric constant can befurther increased.

In a manufacturing process, the light-emitting material is dispersed ina solution containing a binder. However, as a solvent of the solutioncontaining a binder that can be used in this embodiment mode, it ispreferable to appropriately select such a solvent that dissolves thebinder material and that can make a solution with the viscosity of whichis appropriate for a method for forming an electroluminescent layer(various wet processes) and a desired film thickness. In a case where anorganic solvent or the like can be used and, for example, a siloxaneresin is used as the binder, propylene glycolmonomethyl ether, propyleneglycolmonomethyl ether acetate (also referred to as PGMEA),3-methoxy-3-methyl-1-butanol (also referred to as MMB), or the like canbe used.

The light-emitting elements shown in FIGS. 38B and 38C each have astructure where an insulating layer is formed between the electrodelayer and the electroluminescent layer in the light-emitting element ofFIG. 38A. The light-emitting element shown in FIG. 38B has an insulatinglayer 64 between the first electrode layer 60 and the electroluminescentlayer 62. The light-emitting element shown in FIG. 38C has an insulatinglayer 64 a between the first electrode layer 60 and theelectroluminescent layer 62, and an insulating layer 64 b between thesecond electrode layer 63 and the electroluminescent layer 62. In thismanner, the insulating layer may be provided between theelectroluminescent layer and one electrode layer of a pair of electrodelayers that sandwiches the electroluminescent layer, or may be providedbetween the electroluminescent layer and the both electrode layers.Moreover, the insulating layer may be a single layer or a stacked layerincluding a plurality of layers.

In addition, although the insulating layer 64 is provided to be incontact with the first electrode layer 60 in FIG. 38B, the insulatinglayer 64 may be provided to be in contact with the second electrodelayer 63 by reversing the order of the insulating layer and theelectroluminescent layer.

Although insulating layers like the insulating layers 54, 54 a and 54 bin FIG. 37B or 37C, and the insulating layers 64, 64 a and 64 b in FIG.38B or 38C are not particularly limited, such insulating layerspreferably have high dielectric strength and dense film qualities, andmuch preferably high dielectric constants. For example, silicon oxide(SiO₂), yttrium oxide (Y₂O₃), titanium oxide (TiO₂), aluminum oxide(Al₂O₃), hafnium oxide (HfO₂), tantalum oxide (Ta₂O₅), barium titanate(BaTiO₃), strontium titanate (SrTiO₃), lead titanate (PbTiO₃), siliconnitride (Si₃N₄), zirconium oxide (ZrO₂), or the like, or a mixed film ora staked film of two kinds or more thereof can be used. These insulatingfilms can be formed by sputtering, evaporation, CVD, or the like. Inaddition, the insulating layers may be formed by dispersing particles ofthese insulating materials in a binder. The binder material ispreferably formed with the same material and by the same method as thebinder contained in the electroluminescent layer. A film thickness ofsuch an insulating layer is not particularly limited, and the filmthickness of 10 nm to 1000 nm is preferable.

The light-emitting elements shown in this embodiment mode can providelight emission by applying a voltage between a pair of electrode layersthat sandwiches the electroluminescent layer; and, the light-emittingelements can be operated by any of DC driving and AC driving.

The present invention can be freely combined with the embodiment modesdescribed above.

According to the present invention, by dispersing a photocatalystsubstance in an organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate.

Accordingly, since elements can be transferred to various types ofsubstrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used forthe substrate, and a display device can be manufactured at low cost, inaddition to having various functions suitable for applications.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling are kept. Therefore, highly reliablesemiconductor devices and display devices can be manufactured with highyield without complicating the apparatus and the process formanufacturing.

Embodiment Mode 10

Next, Embodiment Mode 10 will describe a mode in which a driver circuitfor driving is mounted on a display panel formed according to the abovedescribed embodiment mode.

FIG. 27A is a top view showing a structure of a display panel inaccordance with the present invention. A pixel portion 2701 in whichpixels 2702 are arranged in matrix, a scan signal input terminal 2703,and a data signal input terminal 2704 are formed over a substrate 2700having an insulating surface. The number of pixels may be determined inaccordance with various standards. In the case of XGA of RGB full color,the number of pixels may be 1024×768×3 (RGB). In the case of UXGA of RGBfull color, the number of pixels may be 1600×1200×3 (RGB), and in thecase of full-spec high-definition display, it may be 1920×1080×3 (RGB).

The pixels 2702 are formed in matrix by intersections of scan linesextended from the scan signal input terminal 2703 and signal linesextended from the data signal input terminal 2704. Each pixel 2702 inthe pixel portion 2701 is provided with a switching element and a pixelelectrode layer connected thereto. A typical example of the switchingelement is a TFT. The gate electrode layer side of the TFT is connectedto a scan line, and a source or drain side of the TFT is connected to asignal line, which enables each pixel to be independently controlled bya signal input from outside.

FIG. 27A shows a structure of a display panel in which a signal to beinput to a scan line and a signal line is controlled by an externaldriver circuit. Alternatively, a driver IC 2751 may be mounted on asubstrate 2700 by a COG (Chip on Glass) method as shown in FIG. 28A. Asanother mounting mode, a TAB (Tape Automated Bonding) method may also beused as shown in FIG. 28B. The driver IC may be formed over a singlecrystal semiconductor substrate or may be formed with a TFT over a glasssubstrate. In FIGS. 28A and 28B, the driver IC 2751 is connected to anFPC (flexible printed circuit) 2750.

When a TFT provided in a pixel is formed from a semiconductor havingcrystallinity, a scan line driver circuit 3702 can be formed over asubstrate 3700 as shown in FIG. 27B. In FIG. 27B, reference numeral 3701denotes a pixel portion, and is controlled by an external driver circuitconnected to a data signal input terminal 3704 and the scan line drivercircuit 3702. When a TFT in a pixel is formed from a polycrystalline(microcrystalline) semiconductor or a single crystal semiconductorhaving a high mobility, a pixel portion 4701, a scan line driver circuit4702 and a signal line driver circuit 4704 can be formed to beintegrated over a glass substrate 4700 as shown in FIG. 27C.

First, a display device employing a COG method is explained withreference to FIG. 28A. A pixel portion 2701 for displaying informationof characters, images, or the like is provided over a substrate 2700. Asubstrate provided with a plurality of driver circuits is divided intorectangles, and a driver circuit 2751 after division (also referred toas a driver IC) is mounted on the substrate 2700. FIG. 28A shows a modeof mounting a plurality of driver ICs 2751, and FPCs 2750 on the end ofthe driver ICs 2751. In addition, the size obtained by division may bemade almost the same as the length of a side of the pixel portion on asignal line side, and an FPC may be mounted on the end of the singledriver IC.

Alternatively, a TAB method may be employed. In that case, a pluralityof tapes may be attached and driver ICs may be mounted on the tapes asshown in FIG. 28B. Similarly to the case of a COG method, a singledriver IC may be mounted on a single tape. In this case, a metal pieceor the like for fixing the driver IC may be attached together in termsof strength.

A plurality of driver ICs to be mounted on a display panel is preferablyformed over a rectangular substrate having a side of 300 mm to 1000 mmor a side longer than 1000 mm for improvement in productivity.

In other words, a plurality of circuit patterns each including a drivercircuit portion and an input-output terminal as a unit may be formedover the substrate and may be divided to be used last. In considerationof the side length of the pixel portion or the pixel pitch, the driverIC may be formed to be a rectangle having a long side of 15 mm to 80 mmand a short side of 1 mm to 6 mm. Alternatively, the driver IC may beformed to have the same side length as that of the pixel portion, orthat of adding a side length of the pixel portion to a side length ofeach driver circuit.

An advantage of the external dimension of the driver IC over an IC chipis the length of the long side. When the driver IC having a long sidelength of 15 mm to 80 mm is used, the number of the driver ICs necessaryfor being mounted in accordance with the pixel portion is smaller thanthat in the case of using an IC chip. Therefore, yield in manufacturingcan be improved. When a driver IC is formed over a glass substrate,productivity is not decreased since there is no limitation on the shapeof a substrate used as a mother body. This is a great advantage comparedwith the case of taking IC chips out of a circular silicon wafer.

When a scan line driver circuit 3702 is formed to be integrated over asubstrate as shown in FIG. 27B, a driver IC provided with a signal linedriver circuit is mounted on a region outside a pixel portion 3701. Thedriver IC is a signal line driver circuit. In order to form a pixelportion corresponding to RGB full color, 3072 signal lines are used foran XGA class and 4800 signal lines are used for a UXGA class. The signallines formed in such a number are divided into several blocks at the endportion of the pixel portion 3701, and leading lines are formed. Thesignal lines are gathered corresponding to the pitches of outputterminals of the driver ICs.

The driver IC is preferably formed from a crystalline semiconductorformed over a substrate. The crystalline semiconductor is preferablyformed by being irradiated with continuous wave laser light. Therefore,a continuous wave solid-state or gas laser is used for an oscillator forgenerating the laser light. There are few crystal defects when acontinuous wave laser is used, and as a result, a transistor can bemanufactured by using a polycrystalline semiconductor layer having alarge grain size. In addition, high-speed driving is possible sincemobility and response speed are favorable, and it is possible to furtherimprove an operating frequency of an element than that of theconventional element. Therefore, high reliability can be obtained sincethere is little variation in characteristics. Note that thechannel-length direction of the transistor and a moving direction oflaser light over the substrate are preferably arranged in the samedirection in order to further improve the operating frequency. This isbecause the highest mobility can be obtained when a channel lengthdirection of a transistor and a moving direction of laser light over asubstrate are almost parallel to each other (preferably, −30° to 30°) ina step of laser crystallization with a continuous wave laser. Note thatthe channel length direction corresponds to a current flowing direction,in other words, a direction in which an electric charge moves in achannel formation region. The thus manufactured transistor has an activelayer including a polycrystalline semiconductor layer in which crystalgrains are extended in the channel length direction, and this means thatcrystal grain boundaries are formed almost along the channel lengthdirection.

In order to perform laser crystallization, it is preferable tosignificantly narrow the laser light, and the shape of the laser light(beam spot) preferably has the same width as that of a short side of thedriver ICs, approximately 1 mm to 3 mm. In addition, in order to securean enough and effective energy density for an object to be irradiated,an irradiated region with the laser light preferably has a linear shape.The term “linear” used herein refers to not a line in a strict sense buta rectangle or an oblong with a large aspect ratio. For example, thelinear shape refers to a rectangle or an oblong with an aspect ratio of2 or more (preferably 10 to 10000). Thus, by making a width of the laserlight shape (beam spot) the same length as a short side of the driverICs, a method for manufacturing a display device, of which productivityis improved, can be provided.

As shown in FIGS. 28A and 28B, driver ICs may be mounted as both thescan line driver circuit and the signal line driver circuit. In thiscase, it is preferable to use the driver ICs having differentspecifications for the scan line driver circuit and the signal linedriver circuit.

In the pixel portion, the signal line and the scan line intersect toform a matrix, and a transistor is arranged at a portion correspondingto each intersection. One feature of the present invention is that TFTshaving an amorphous semiconductor or a semiamorphous semiconductor as achannel portion are used as the transistors arranged in the pixelportion. The amorphous semiconductor is formed by a method such as aplasma CVD method or a sputtering method. The semiamorphoussemiconductor can be formed by a plasma CVD method at a temperature of300° C. or lower. A film thickness enough to form the transistor isformed in a short time even in the case of using, for example, anon-alkaline glass substrate having an external size of 550 mm×650 mm.The feature of such a manufacturing technique is effective inmanufacturing a large-sized display device. In addition, a semiamorphousTFT can obtain field effect mobility of 2 cm²/V·Nsec to 10 cm²/V·Nsec byforming a channel formation region using a SAS. When the presentinvention is applied, a minute wiring can be stably formed without adefect such as a short circuit since a pattern can be formed into adesired shape with high controllability. Accordingly, a TFT havingelectric characteristics required to operate pixels sufficiently can beformed. Therefore, this TFT can be used as a switching element of thepixel or as an element included in the scan line driver circuit. Thus, adisplay panel in which system-on-panel is realized can be manufactured.

The scan line driver circuit can also be formed to be integrated overthe substrate by using a TFT having a semiconductor layer formed of aSAS. In the case of using a TFT having a semiconductor layer formed withan AS, the driver ICs may be mounted as both the scan line drivercircuit and the signal line driver circuit.

In that case, it is preferable to use the driver ICs having differentspecifications for the scan line driver circuit and the signal linedriver circuit. For example, a transistor included in the scan linedriver IC is required to withstand a voltage of approximately 30 V;however, a drive frequency is 100 kHz or less, and comparativelyhigh-speed operation is not required. Therefore, it is preferable to seta channel length (L) of the transistor included in the scan line driversufficiently long. On the other hand, a transistor of the signal linedriver IC is required to withstand a voltage of only approximately 12 V;however, a drive frequency is around 65 MHz at 3 V, and high-speedoperation is required. Therefore, it is preferable to set a channellength or the like of the transistor included in a driver on a micronrule. By using the present invention, a minute pattern can be formedwith high controllability. Therefore, the present invention can handlesuch a micron rule sufficiently.

A method for mounting the driver IC is not particularly limited, and aCOG method, a wire bonding method, or a TAB method can be employed.

When the thicknesses of the driver IC and the counter substrate are setequal to each other, the heights of the driver IC and the countersubstrate are almost equal, which contributes to thinning of a displaydevice as a whole. When both substrates are formed from the samematerial, thermal stress is not generated and characteristics of acircuit formed from a TFT are not damaged even when a temperature changeis caused in the display device. Furthermore, the number of the driverICs to be mounted for one pixel portion can be reduced by mountingdriver ICs having a longer side than IC chips as driver circuits asshown in this embodiment mode.

As described above, a driver circuit can be incorporated in a displaypanel.

Embodiment Mode 11

A structure of a pixel of a display panel shown in this embodiment modewill be explained with reference to equivalent circuit diagrams shown inFIGS. 19A to 19F. This embodiment mode describes an example in which anorganic EL element including an organic compound or an organic ELelement including an organic compound layer and an inorganic compoundlayer is used for an electroluminescent layer of a light-emittingelement.

In a pixel shown in FIG. 19A, a signal line 710 and power supply lines711 and 712 are arranged in the column direction, and a scan line 714 isarranged in the row direction. The pixel also includes a TFT 701 as aswitching TFT, a TFT 703 as a driver TFT, a TFT 704 as a current controlTFT, a capacitor element 702, a light-emitting element 705, and anopposite electrode 713.

A pixel shown in FIG. 19C has the same structure as that shown in FIG.19A, except that a gate electrode of the TFT 703 is connected to thepower supply line 712 arranged in the row direction. In other words,both pixels shown in FIGS. 19A and 19C show the same equivalent circuitdiagrams. However, power supply lines are formed from conductive layersin different levels between the cases where the power supply line 712 isarranged in the column direction (FIG. 19A) and where the power supplyline 712 is arranged in the row direction (FIG. 19C). Here, a wiring towhich the gate electrode of the TFT 703 is connected is focused and thefigures are separately shown in FIGS. 19A and 19C to show that thewirings are formed in different layers.

In the pixels shown in FIGS. 19A and 19C, the TFTs 703 and 704 areconnected to each other in series.

Note that the TFT 703 is operated in a saturation region and functionsto control the amount of current flowing into the light-emitting element705, whereas the TFT 704 is operated in a linear region and functions tocontrol current supply to the light-emitting element 705. The TFTs 703and 704 preferably have the same conductivity in view of themanufacturing process. For the TFT 703, a depletion mode TFT as well asan enhancement mode TFT may be used. In the present invention having theabove structure, slight variations in VGS of the TFT 704 does not affectthe amount of current flowing into the light-emitting element 705, sincethe TFT 704 is operated in a linear region. In other words, the amountof current flowing into the light-emitting element 705 is determined bythe TFT 703 operated in the saturation region. The present inventionhaving the above structure can provide a display device in which imagequality is improved by suppressing variations in luminance of thelight-emitting element due to the variation in the TFT characteristics.

The TFT 701 of each of pixels shown in FIGS. 19A to 19D controls a videosignal input to the pixel. When the TFT 701 is turned on and a videosignal is input to the pixel, the video signal is held by the capacitorelement 702. Although FIGS. 19A and 19C show structures in which thecapacitor element 702 is provided, the present invention is not limitedthereto. When a gate capacitance or the like can serve as a capacitorholding a video signal, the capacitor element 702 is not providedexplicitly.

The light-emitting element 705 has a structure in which anelectroluminescent layer is interposed between two electrodes. A pixelelectrode and a counter electrode (an anode and a cathode) have anelectric potential difference therebetween so that a forward biasvoltage is applied. The electroluminescent layer is formed from amaterial selected from a wide range of materials such as an organicmaterial and an inorganic material. The luminescence in theelectroluminescent layer includes light emission that is generated inreturning from a singlet excited state to a ground state (fluorescence)and light emission that is generated in returning from a triplet exitedstate to a ground state (phosphorescence).

A pixel shown in FIG. 19B has the same structure as that shown in FIG.19A, except that a TFT 706 and a scan line 716 are added. Similarly, apixel shown in FIG. 19D has the same structure as that shown in FIG.19C, except that a TFT 706 and a scan line 716 are added.

The TFT 706 is controlled to be turned on or off by the newly arrangedscan line 716. When the TFT 706 is turned on, electric charges held atthe capacitor element 702 are discharged, thereby turning off the TFT704. In other words, supply of a current to the light-emitting element705 can be forcibly stopped by providing the TFT 706. Therefore, byemploying the structures shown in FIGS. 19B and 19D, a lighting periodcan start simultaneously with or shortly after a start of a writingperiod without waiting until signals are written into all the pixels;thus, a duty ratio can be improved.

In a pixel shown in FIG. 19E, a signal line 720 and a power supply line721 are arranged in the column direction, and a scan line 723 isarranged in the row direction. The pixel further includes a TFT 741 as aswitching TFT, a TFT 743 as a driver TFT, a capacitor element 742, alight-emitting element 744, and an opposite electrode 722. A pixel shownin FIG. 19F has the same structure as that shown in FIG. 19E, exceptthat a TFT 745 and a scan line 724 are added. The structure of FIG. 19Fcan also improve a duty ratio by providing the TFT 745.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling are kept. Therefore, more highly reliabledisplay devices can be manufactured with high yield without complicatingthe apparatus and the process for manufacturing.

Embodiment Mode 12

FIG. 22 shows an example of forming an EL display module using asubstrate 2800 to which an element layer is transferred in accordancewith the present invention. In FIG. 22, a pixel portion including pixelsis formed over the substrate 2800 to which the element layer istransferred. Flexible substrates are used for the substrate 2800 and asealing substrate 2820.

In FIG. 22, a protective circuit 2801 using a TFT which has the samestructure as that formed in the pixel is provided between a drivercircuit and the pixel, outside the pixel portion. The protective circuitportion 2801 may be configured to operate in the same manner as a diodeby connecting a gate to either a source or a drain of the TFT. A driverIC formed from a single crystalline semiconductor, a stick driver ICformed from a polycrystalline semiconductor film over a glass substrate,a driver circuit formed from a SAS, or the like is applied to a drivercircuit 2809.

The substrate 2800 to which the element layer is transferred is fixed tothe sealing substrate 2820 with spacers 2806 a and 2806 b formed by adroplet-discharging method interposed therebetween. The spacers arepreferably provided to keep a distance between two substrates constanteven when the substrate is thin or an area of the pixel portion isenlarged. A space between the substrate 2800 and the sealing substrate2820 over light-emitting elements 2804 and 2805 connected to TFTs 2802and 2803, respectively, may be filled with a resin material having alight-transmitting property and the resin material may be solidified.Alternatively, the space may be filled with anhydrous nitrogen or aninert gas.

FIG. 22 shows a case where the light-emitting elements 2804 and 2805have top emission type structures, which emit light in the direction ofarrows shown in the drawing. Multicolor display can be performed bymaking each pixel to emit light of a different color of red, green, andblue from each other. At this time, color purity of light emittedoutside can be improved by forming colored layers 2807 a to 2807 ccorresponding to respective colors on the sealing substrate 2820 side.Moreover, pixels which emit white light may be used and may be combinedwith the colored layers 2807 a to 2807 c.

The driver circuit 2809 which is an external circuit is connected to ascan line connection terminal or a signal line connection terminal whichis provided at one end of an external wire board 2811 by a wire board2810. In addition, a heat pipe 2813 which a highly efficient thermalconductive device with a pipe shape and a heat sink 2812, which are usedfor radiating heat to the outside of the device, may be provided incontact with or adjacent to the substrate 2800 to increase a heatradiation effect.

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate. The remaining layers on the element layer side afterpeeling the organic compound layer including a photocatalyst substanceis an organic compound layer 2815.

Accordingly, since elements can be transferred to various types ofsubstrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used forthe substrate, and a display device can be manufactured at low cost, inaddition to having various functions suitable for applications.

Note that FIG. 22 shows the top emission EL module; however, a bottomemission module may be employed by changing the structure of thelight-emitting element or the arrangement of the external circuit board.Naturally, a dual emission mode in which light is emitted from bothsides of the top and bottom surfaces may be used. In the case of the topemission mode, the insulating layer serving as a partition wall may becolored and used as a black matrix. This partition wall can be formed bya droplet-discharging method and it may be formed by mixing a blackresin of a pigment material, carbon black, or the like into a resinmaterial such as polyimide. A stacked layer thereof may also be used.

In addition, reflected light of light entering from outside may beblocked by using a retardation plate or a polarizing plate. Aninsulating layer serving as a partition wall may be colored and used asa black matrix. This partition wall can be formed by adroplet-discharging method or the like. Carbon black or the like may bemixed into a black resin of a resin material such as polyimide, and astacked layer thereof may also be used. By a droplet-discharging method,different materials may be discharged to the same region plural times toform the partition wall. A quarter wave plate or a half wave plate maybe used as the retardation plate and may be designed to be able tocontrol light. As the structure, the light-emitting element, the sealingsubstrate (sealing material), the retardation film (quarter wave plateor half wave plate), and the polarizing plate are sequentially formedover a TFT element substrate, and light emitted from the light-emittingelement is transmitted therethrough and emitted outside from thepolarizing plate side. The retardation film or polarizing plate may beprovided on a side through which light passes or may be provided on bothsides in the case of a dual emission display device in which light isemitted from the both surfaces. In addition, an anti-reflection film maybe provided on the outer side of the polarizing plate. Accordingly,higher-definition and crisper images can be displayed.

As for the substrate 2800 to which the element layer is transferred, asealing structure may be formed by attaching a resin film to the sidewhere the pixel portion is formed, with the use of a sealing material oran adhesive resin. Various sealing methods such as resin sealing using aresin, plastic sealing using plastic, and film sealing using a film canbe adopted. A gas barrier film which prevents moisture from penetratingthe resin film is preferably provided over the surface of the resinfilm. By employing a film sealing structure, further reduction inthickness and weight can be achieved.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling are kept. Therefore, highly reliablesemiconductor devices and display devices can be manufactured with highyield without complicating the apparatus and the process formanufacturing.

Embodiment Mode 13

This embodiment mode will be explained with reference to FIGS. 23A and23B. FIGS. 23A and 23B show an example of forming a display device (aliquid crystal display module) using a TFT substrate 2600 that ismanufactured by applying the present invention.

FIG. 23A shows an example of a liquid crystal display module where theTFT substrate 2600 and an counter substrate 2601 are attached with asealing material 2602, and a pixel portion 2603 including a TFT or thelike and a liquid crystal layer 2604 are provided therebetween so as toform a display region. A colored layer 2605 is necessary for colordisplay. In the case of an RGB method, a colored layer corresponding toeach color of red, green, and blue is provided to correspond to eachpixel. Polarizing plates 2606 and 2607 and a diffuser plate 2613 areprovided outside the TFT substrate 2600 and the counter substrate 2601.A light source includes a cold cathode tube 2610 and a reflector plate2611. A circuit board 2612 is connected to the TFT substrate 2600 and adriver circuit 2608 mounted over the TFT substrate 2600 through aflexible wiring board 2609. External circuits such as a control circuitand a power supply circuit are included in the circuit board 2612. Adriver IC formed from a single crystalline semiconductor, a stick driverIC formed from a polycrystalline semiconductor film over a glasssubstrate, a driver circuit formed from a SAS, or the like is applied toa driver circuit 2608.

In addition, the liquid crystal display module includes a backlight. Thebacklight can be formed from a light-emitting member, typically, a raycathode tube, an LED, an EL light-emitting device or the like can beused. The backlight used in this embodiment mode preferably hasflexibility. Further, a reflector plate and an optical film may beprovided for the backlight.

The polarizing plates 2607 and 2606 are attached to the TFT substrate2600 and the counter substrate 2601, respectively. A stacked structuremay be employed, in which a retardation plate is included between thesubstrate and the polarizing plate. Further, if necessary, anantireflection treatment may be performed on the polarizing plate 2606on the viewer's side.

For the liquid crystal display module, a TN (Twisted Nematic) mode, anIPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, anMVA (Multi-domain Vertical Alignment) mode, an PVA (Patterned VerticalAlignment) mode, an ASM (Axially Symmetric aligned Micro-cell) mode, anOCB (Optical Compensated Birefringence) mode, an FLC (FerroelectricLiquid Crystal) mode, or the like can be used.

FIG. 23B shows an example of an FS-LCD (Field Sequential-LCD) in whichan FS (Field Sequential) method is applied to the liquid crystal displaymodule of FIG. 23A. The FS-LCD emits red light, green light, and bluelight during one frame period and can perform color display by combiningimages using time division. Since each light is emitted by alight-emitting diode, a cold cathode tube, or the like, a color filteris not necessary. Thus, it is not necessary to arrange color filters ofthree primary colors and restrict the display region of each color, andthus, color display of all three colors can be performed in any regions.On the other hand, since three colors of light are emitted during oneframe period, high-speed response is required for a liquid crystal. Byemploying an FS method with an FLC mode liquid crystal layer, an OCBmode liquid crystal layer or the like to a display device of the presentinvention, a display device or a liquid crystal television device withhigh performance and high image quality can be completed.

A liquid crystal layer in the OCB mode has a so-called π-cell structure.In the π-cell structure, liquid crystal molecules are oriented so thattheir pretilt angles are plane-symmetric along a center plane between anactive matrix substrate and a counter substrate. An orientation state ofa liquid crystal of a π-cell structure is initially splayed orientationwhile a voltage is not applied between the substrates, and then shiftsto bend orientation when a voltage is applied therebetween. In this bendorientation state, when a voltage is not applied between the substrates,light can be transmitted and white display is obtained. When a voltageis applied further, liquid crystal molecules of bend orientation getorientated perpendicular to the both substrates so that light can be nottransmitted. With the OCB mode, response with about 10 times higherspeed than a conventional TN mode can be achieved.

Moreover, as a mode corresponding to the FS method, an HV (Half-V)-FLCor an SS (Surface stabilized)-FLC using a ferroelectric liquid crystal(FLC) capable of high-speed operation, or the like can also be used. TheOCB mode uses a nematic liquid crystal having relatively low viscosity,while the HV-FLC or the SS-FLC uses a smectic liquid crystal having aferroelectric phase.

Moreover, optical response speed of a liquid crystal display module getshigher by narrowing the cell gap of the liquid crystal display module.In addition, the optical response speed can also get higher bydecreasing the viscosity of the liquid crystal material. The increase inresponse speed is particularly advantageous when a pixel pitch in apixel portion of a liquid crystal display module is 30 μm or less. Also,further increase in response speed is possible by an overdrive method inwhich applied voltage is increased (or decreased) for a moment.

FIG. 23B shows a transmissive liquid crystal display module, in which ared light source 2910 a, a green light source 2910 b, and a blue lightsource 2910 c are provided as light sources. The light sources areprovided with a control portion 2912 in order to switch on or off thered light source 2910 a, the green light source 2910 b, and the bluelight source 2910 c. The control portion 2912 controls light emission ofeach color, so that light enters the liquid crystal to combine images bytime division, thereby performing color display.

This embodiment mode can be freely combined with the embodiment modesdescribed above.

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, the organic compound isdecomposed (broken) to make the layer rough and the element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate.

Accordingly, since elements can be transferred to various types ofsubstrates, a material for the substrate can be selected from a widerrange of materials. In addition, an inexpensive material can be used forthe substrate, and a display device can be manufactured at low cost, inaddition to having various functions suitable for applications.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling are kept. Therefore, more highly reliablesemiconductor devices and display devices can be manufactured with highyield without complicating the apparatus and the process formanufacturing.

Embodiment Mode 14

A backlight which can be used as a light source of a transmissive typeliquid crystal display device manufactured by a transfer process of thepresent invention will be described with reference to FIG. 30A to FIG.36.

FIG. 30A is a top view of a backlight and FIG. 30B is a cross-sectionalview taken along the line H-G. In FIGS. 30A and 30B, a common electrodelayer 6001 having a reflective property is provided over a substrate6000 having flexibility, and a wiring layer 6002 a and a wiring layer6002 b which function as an anode are formed over an insulating layer6006. A light-emitting diode 6003 a and a light-emitting diode 6003 bare provided over the wiring layer 6002 a and the wiring layer 6002 brespectively. The light-emitting diode 6003 a is electrically connectedto the wiring layer 6002 a with an anisotropic conductive layer 6008. Inaddition, the light-emitting diode 6003 a is electrically connected tothe common electrode layer 6001 at an opening (a contact hole) 6004 awhich is formed in the insulating layer 6006. Similarly, thelight-emitting diode 6003 b is electrically connected to the wiringlayer 6002 b with the anisotropic conductive layer 6008, and thelight-emitting diode 6003 b is electrically connected to the commonelectrode layer 6001 at an opening (a contact hole) 6004 b formed in theinsulating layer 6006.

The common electrode layer 6001 also serves as a reflecting electrodewhich reflects incident light. In addition, the anisotropic conductivelayer 6008 may be provided entirely, or may be provided selectively fora connection portion of the light-emitting diode.

FIG. 31A is a top view of a backlight, and FIG. 31B is a cross-sectionalview taken along a line I-J of FIG. 30A. The backlight of FIGS. 31A and31B is an example in which connections between a light-emitting diode,and a common electrode layer and a wiring layer are made by a bump or aconductive metal paste (e.g., a silver (Ag) paste). In FIG. 31A, thewiring layer 6002 a, the wiring layer 6002 b, and a wiring layer 6002 cextending in the column direction are formed. A voltage to be applied tothe wiring layer is easily controlled when light-emitting diodes of thesame color are arranged for each wiring layer, such that light-emittingdiodes (the light-emitting diode 6003 a or the like) which are connectedto the wiring layer 6002 a are red light-emitting diodes (R),light-emitting diodes (the light-emitting diode 6003 b or the like)which are connected to the wiring layer 6002 b are green light-emittingdiodes (G), and light-emitting diodes (a light-emitting diode 6003 c orthe like) which are connected to the wiring layer 6002 c are blue lightemission diodes (B). The light-emitting diode 6003 a is electricallyconnected to the common electrode layer 6001 and the wiring layer 6002 awith a conductive paste 6009, and the light-emitting diode 6003 b iselectrically connected to the common electrode layer 6001 and the wiringlayer 6002 b with the conductive paste 6009.

FIG. 32A is a top view of a backlight, and FIGS. 32B and 32C arecross-sectional views along a line K-L of FIG. 32A. The backlight ofFIGS. 32A to 32C has a structure in which a reflective electrode layerand a common electrode layer are divided. In FIG. 32B, a reflectiveelectrode layer 6021 is formed over the substrate 6000 havingflexibility (also referred to as a flexible substrate), and thelight-emitting diode 6003 a is provided over the wiring layer 6002 a andthe common electrode layer 6020 a. Further, the light-emitting diode6003 b is provided over the wiring layer 6002 b and the common electrodelayer 6020 b. The light-emitting diode 6003 a is electrically connectedto the wiring layer 6020 a by a conductive paste 6008 c, and thelight-emitting diode 6003 a is electrically connected to the wiringlayer 6002 a by a conductive paste 6008 d. The light-emitting diode 6003b is electricity connected to the common electrode layer 6020 b by aconductive paste 6008 a, and the light-emitting diode 6003 b iselectrically connected to the wiring layer 6002 b by a conductive paste6008 b.

FIG. 32C shows a structure in which an insulating layer 6010 including alight scattering particle 6011 is provided over the reflective electrodelayer 6021. The light scattering particle 6011 includes an effect ofscattering incident light and light reflected on the reflectiveelectrode layer 6021. In this embodiment mode, the reflective electrodelayer may perform specular reflection as a mirror surface state.Further, a reflective electrode layer which has unevenness on itssurface and is whitened may be used to perform diffuse reflection.

An example in which a plurality of light-emitting diodes are providedover a flexible substrate 6100 is described with reference to FIGS. 33Aand 33B. When a backlight having flexibility is used, there is adirection where frequency of bending is high depending on a productprovided with the backlight. The backlight in FIG. 33A is a horizontallylong rectangle in the top view, if frequency of bending the product inthe directions of arrows 6105 a and 6105 b on the long side is high, theplurality of light-emitting diodes provided over the flexible substrate6100 are rectangular in the top view. Light-emitting diodes 6101 a and6101 b are arranged such that short sides of the light-emitting diodes6101 a and 6101 b are parallel to a side of the flexible substrate 6100whose frequency of being bent is high.

The backlight shown in FIG. 33B uses a vertically long flexiblesubstrate 6200, and frequency of bending in directions of arrows 6205 aand 6205 b is high. In this case, a plurality of light-emitting diodesprovided over the vertical flexible substrate 6200 are rectangular inthe top view. Light-emitting diodes 6201 a and 6201 b are arranged suchthat short sides of the light-emitting diodes 6201 a and 6201 b areparallel to a side of the flexible substrate 6200 whose frequency ofbeing bent is high. In the case where frequency of bending is different(i.e., the frequency is high or low) depending on an intended purposeand a shape of a display device to be equipped, as just described, whena side to be bent and the short side of the light-emitting diode arearranged to be parallel in advance for easily bending, and thus, thedisplay device is hard to be damaged. Therefore, reliability can beincreased.

FIGS. 34A and 34B show a light-emitting diode 6401 a and alight-emitting diode 6401 b adjacently provided with an interval b overa substrate 6400 having flexibility (also referred to as flexiblesubstrate). The light-emitting diode 6401 a and the light-emitting diode6401 b each have a thickness a. FIG. 34B is a diagram in which theflexible substrate 6400 which is provided with the light-emitting diode6401 a and the light-emitting diode 6401 b is bent in directions of anarrow 6405 a and an arrow 6405 b. As in FIGS. 34A and 34B, when thewidth of the interval b between the adjacent light-emitting diodes ismore than twice as large as the thickness a, that is, when b>2a issatisfied, the flexible substrate 6400 can be bent easily without thelight-emitting diode 6401 a and the light-emitting diode 6401 b cominginto contact with each other.

FIGS. 35A and 35B show an example of a structure in which alight-emitting diode is covered with a resin layer. As shown in FIG.35A, a light-emitting diode 6151 a covered with a resin layer 6152 a anda light-emitting diode 6151 b covered with a resin layer 6152 b areformed over a flexible substrate 6150 with an interval b therebetween.Each of maximum thicknesses of the resin layer 6152 a and the resinlayer 6152 b is a thickness a. FIG. 35B shows a state in which theflexible substrate 6150 which is provided with the light-emitting diode6151 a, the resin layer 6152 a, the light-emitting diode 6151 b, and theresin layer 6152 b is bent in directions of the arrow 6154 a and thearrow 6154 b. As in FIGS. 35A and 35B, when the width of the interval bbetween the adjacent resin layers or light-emitting diodes covered withthe resin layers is more than twice as large as the maximum thickness aof the resin layers covering the light-emitting diodes, that is, whenb>2a is satisfied, the flexible substrate 6150 can be bent easilywithout the light-emitting diode 6151 a covered with the resin layer6152 a and the light-emitting diode 6151 b covered with the resin layer6152 b coming into contact with each other.

A sidelight type backlight having flexibility shown in FIG. 36 includesa light guide plate 6300 having flexibility, a light-emitting diode 6302provided on a flexible substrate 6301, and reflective sheets 6303 a and6303 b which reflect light emitted from the light-emitting diode 6302.The reflective sheets 6303 a and 6303 b are provided so that light isefficiently led to the light guide plate. If the reflective sheet isbent into a cylinder shape, the backlight itself is not easy to bend.However, the reflective sheets 6303 a and 6303 b having a shape which isnot fixed in a cylinder shape in FIG. 36 as shown in this embodimentmode can be easily bent. The arrangement of the light-emitting diode6303 over the flexible substrate 6301 and connection state of thereflective electrode layer, the common electrode layer and the wiringlayer with the light-emitting diode, and the like can employ the modesshown in FIGS. 30A to 34B.

When a backlight having flexibility with the above structure is used fora display device having flexibility which is formed using a transferprocess of the present invention, an electronic device havingflexibility can be formed. In addition, an inexpensive material can beused for the substrate, and a semiconductor device can be manufacturedat low cost, in addition to having various functions suitable forapplications.

Note that the above described structure of the backlight can be used forother liquid crystal display panels than the display devices shown inthe present invention.

Embodiment Mode 15

A backlight which can be used as a light source of a transmissive typeliquid crystal display device manufactured by a transfer process of thepresent invention will be described with reference to FIG. 39.

FIG. 39 shows a display device portion 418 including a flexiblesubstrate 413, an element layer 415 including a liquid crystal elementor the like, a flexible counter substrate 416, a polarizing plate 417, apolarizing plate 411, a driver circuit 419, and an FPC 437, and abacklight 408 including a flexible substrate 401, a layer 402 includinga light-emitting element formed from a first conductive layer, anelectroluminescent layer, and a second conductive layer, and a flexiblesubstrate 403.

As the backlight 408 shown in FIG. 39, a light-emitting device havingone or both of the organic EL element and the inorganic EL element inthe above-described embodiment mode can be used. Alternatively, withoutusing the present invention, the layer 402 including a light-emittingelement in which a first conductive layer, a light-emitting layer, and asecond conductive layer are formed, is formed over the flexiblesubstrate 401, and is sealed with the flexible substrate 403 to obtainan EL display device (light-emitting device). The EL display device(light-emitting device) can also be used. Note that the light-emittingelement can be formed in such a way that the first conductive layer, thelight-emitting layer, and the second conductive layer are formed by adroplet-discharging method (such as an inkjet (U) method), anevaporation method, a sputtering method, a printing method, or the like,as appropriate.

Note that as the flexible substrate 403 of the light-emitting devicewhich can be used for the backlight 408, the polarizing plate 411 shownin FIG. 39 may be used. In this case, a layer having a light-emittingelement is formed over the flexible substrate 401, and the flexiblesubstrate 401 and the layer 402 having a light-emitting element aresealed with the polarizing plate 411. Then, the polarizing plate 411 andthe flexible substrate 413 can be attached to each other with anadhesive having light transmitting property. Accordingly, the number offlexible substrates forming the backlight can be reduced.

After the layer 402 having a light-emitting element is formed over theflexible substrate 401, the layer 402 having a light-emitting elementand the flexible substrate 401 can be attached to the polarizing plate411 provided on the flexible substrate 413 with an adhesive.Accordingly, the number of flexible substrates forming the backlight canbe reduced.

After the layer 402 having a light-emitting element is formed in onesurface of the polarizing plate 411, the flexible substrate 401 isattached on one surface of the layer 402 having a light-emitting elementand the polarizing plate 411 using an adhesive, and then the othersurface of the polarizing plate 411 and the flexible substrate 401 maybe attached to each other using an adhesive. Further, after the layer402 having a light-emitting element is formed on one surface of thepolarizing plate 411, the other surface of the polarizing plate 411 andthe flexible substrate 413 are attached to each other using an adhesive,and then the flexible substrate 401 may be attached to one surface ofthe polarizing plate 411 using an adhesive. Accordingly, the number offlexible substrates forming the backlight can be reduced.

Furthermore, the polarizing plate 411 may be used instead of theflexible substrate 401. That is, the polarizing plate 411 which sealsthe flexible substrate 413 and the layer 402 having a light-emittingelement may be attached to the element layer 415, using an adhesive.Accordingly, the number of flexible substrates forming the liquidcrystal display panel can be reduced.

A light-emitting element with a large area which covers a pixel portioncan be formed as a light-emitting element formed in the layer 402 havinga light-emitting element of this embodiment mode. An element which emitswhite light is preferably used as such a light-emitting element.

In addition, a linear light-emitting element may be formed as alight-emitting element formed in the layer 402 having a light-emittingelement. An element which emits white light can be used as thelight-emitting element. Further, light-emitting elements are preferablyarranged such that a blue light-emitting element, a red light-emittingelement, and a green light-emitting element are provided in each pixel.In this case, a colored layer is not necessarily provided. Note thatwhen a colored layer is provided, color purity is increased and a liquidcrystal display panel capable of performing crisp and vivid display isprovided.

In addition, as a light-emitting element formed in the layer 402 havinga light-emitting element, an element which emits white light can be usedin each pixel. Further, a sub-pixel including a blue light-emittingelement, a sub-pixel including a red light-emitting element, and asub-pixel including a green light-emitting element may be provided ineach pixel. Accordingly, a liquid crystal display panel capable ofhigh-definition display can be provided.

When a backlight having flexibility with the above structure is used fora display device having flexibility which is formed using a transferprocess of the present invention, an electronic device havingflexibility can be formed. In addition, an inexpensive material can beused for the substrate, and a semiconductor device can be manufacturedat low cost, in addition to having various functions suitable forapplications.

Note that a structure of the backlight can be used for other liquidcrystal display panels than the display panels shown in the presentinvention.

Embodiment Mode 16

By a display device formed by the present invention, a television device(also, referred to as a television simply or a television receiver) canbe completed. FIG. 24 shows a block diagram of a main structure of atelevision device. As for a display panel, any modes of the followingmay be employed: as the structure shown in FIG. 27A, a case where only apixel portion 901 is formed and a scan line driver circuit 903 and asignal line driver circuit 902 are mounted by a TAB method as shown inFIG. 28B; a case where only the pixel portion 901 is formed and the scanline driver circuit 903 and the signal line driver circuit 902 aremounted by a COG method as shown in FIG. 28A; a case where a TFT isformed as shown in FIG. 27B, the pixel portion 901 and the scan linedriver circuit 903 are formed over a substrate, and the signal linedriver circuit 902 is independently mounted as a driver IC; a case wherethe pixel portion 901, the signal line driver circuit 902, and the scanline driver circuit 903 are formed over the same substrate as shown inFIG. 28C; and the like.

In addition, as another structure of an external circuit, a video signalamplifier circuit 905 that amplifies a video signal among signalsreceived by a tuner 904, a video signal processing circuit 906 thatconverts the signals output from the video signal amplifier circuit 905into chrominance signals corresponding to each colors of red, green, andblue, a control circuit 907 that converts the video signal so as to beinput to a driver IC, and the like are provided on an input side of thevideo signal. The control circuit 907 outputs signals to both a scanline side and a signal line side. In the case of digital driving, asignal dividing circuit 908 may be provided on the signal line side andan input digital signal may be divided into m pieces to be supplied.

An audio signal among signals received by the tuner 904 is transmittedto an audio signal amplifier circuit 909 and is supplied to a speaker913 through an audio signal processing circuit 910. A control circuit911 receives control information of a receiving station (receptionfrequency) or sound volume from an input portion 912 and transmitssignals to the tuner 904 or the audio signal processing circuit 910.

Such display modules are incorporated into each casing as shown in FIGS.25A and 25B, thereby a television device can be completed. When an ELdisplay module shown in FIG. 22 is used, an EL television device can becompleted. When a liquid crystal display module shown in FIG. 23 isused, a liquid crystal television device can be completed. In FIG. 25A,a main screen 2003 is formed by a display module, and a speaker portion2009, an operation switch, and the like are provided as accessoryequipment. In such a manner, a television device can be completedaccording to the present invention.

A display panel 2002 is incorporated in a casing 2001, and general TVbroadcast can be received by a receiver 2005. Further, by connecting toa communication network by wired or wireless connections via a modem2004, one-way (from a sender to a receiver) or two-way (between a senderand a receiver or between receivers) information communication can becarried out. The television device can be operated by using a switchbuilt in the casing or a remote control unit 2006. A display portion2007 for displaying output information may also be provided in theremote control unit 2006.

Further, the television device may include a sub-screen 2008 formedusing a second display panel to display channels, volume, or the like,in addition to the main screen 2003. In this structure, the main screen2003 and the sub-screen 2008 can be formed using a liquid crystaldisplay panel of the present invention. The main screen 2003 may beformed using an EL display panel having a superior viewing angle, andthe sub-screen 2008 may be formed using a liquid crystal display panelcapable of displaying sub-images with lower power consumption. In orderto reduce the power consumption preferentially, the main screen 2003 maybe formed using a liquid crystal display panel, and the sub-screen 2008may be formed using an EL display panel such that the sub-screen canflash on and off. By using the present invention, even when with alarge-sized substrate is used and many TFTs and electronic parts areused, a highly reliable display device can be formed.

FIG. 25B shows a television device having a large display portion with asize of, for example, 20 to 80 inches. The television device includes acasing 2010, a display portion 2011, a keyboard portion 2012 that is anoperation portion, a speaker portion 2013, and the like. The presentinvention is applied to the manufacturing of the display portion 2011.

According to the present invention, by dispersing the photocatalystsubstance in the organic compound layer, and using a photocatalystfunction of the photocatalyst substance, an organic compound isdecomposed (broken) to make the layer rough and an element layer ispeeled from the substrate. Therefore, since it is unnecessary to apply alarge amount of power to the element layer in order to peel it, theelement is not broken during the peeling process and an element withgood shape can be transferred to various types of substrates asappropriate.

According to the present invention, a semiconductor device and a displaydevice can be manufactured using a peeling process, in which a transferprocess can be conducted with a good state in which a shape and propertyof the element before peeling are kept. Therefore, highly reliablesemiconductor devices and display devices, and further, televisiondevice equipped with such devices cam be manufactured with high yieldwithout complicating the apparatus and the process for manufacturing.

As a matter of course, the present invention is not limited to thetelevision device. The present invention can be applied to variousapplications such as monitors of personal computers, particularlylarge-sized display media typified by information display boards attrain stations, airports, or the like, and advertising display boards onthe street.

Embodiment Mode 17

Electronic devices of the present invention includes: television devices(also simply referred to as TVs or television receivers), cameras suchas digital cameras and digital video cameras, mobile phone sets (alsosimply referred to as cellular phone sets or cellular phones), portableinformation terminals such as a PDA, portable game machines, monitorsfor computers, computers, audio reproducing devices such as car audiosets, image reproducing devices provided with a recording medium such ashome-use game machines, and the like. Specific examples thereof will beexplained with reference to FIGS. 26A to 26E.

A portable information terminal shown in FIG. 26A includes a main body9201, a display portion 9202, and the like. The display device of thepresent invention can be applied to the display portion 9202. Thus, aportable information terminal which is light weight, thin, and highlyreliable can be provided.

A digital video camera shown in FIG. 26B includes a display portion9701, a display portion 9702, and the like. The display device of thepresent invention can be applied to the display portion 9701. Thus, adigital video camera which is light weight, thin, and highly reliablecan be provided.

A cellular phone set shown in FIG. 26C includes a main body 9101, adisplay portion 9102, and the like. The display device of the presentinvention can be applied to the display portion 9102. Thus, a cellularphone set which is light weight, thin, and highly reliable can beprovided.

A portable television set shown in FIG. 26D includes a main body 9301, adisplay portion 9302, and the like. The display device of the presentinvention can be applied to the display portion 9302. Thus, a portabletelevision set which is light weight, thin, and highly reliable can beprovided. The display device of the present invention can be applied tovarious types of television sets including a small-sized televisionmounted on a portable terminal such as a cellular phone set, amedium-sized television that is portable, and a large-sized television(for example, 40 inches in size or more).

A portable computer shown in FIG. 26E includes a main body 9401, adisplay portion 9402, and the like. The display device of the presentinvention can be applied to the display portion 9402. Thus, a portablecomputer which is light weight, thin, and highly reliable can beprovided.

By the display device of the present invention, electronic devices whichare light weight, thin, and highly reliable can be provided.

Embodiment Mode 18

Structure of a semiconductor device of this embodiment mode will bedescribed using FIG. 21A. As shown in FIG. 21A, a semiconductor device20 of the present invention has a function of communicating data in anon-contact manner, which includes a power supply circuit 11, a clockgenerating circuit 12, a data modulating-demodulating circuit 13, acontrolling circuit 14 for controlling another circuit, an interfacecircuit 15, a memory circuit 16, a data bus 17, and an antenna (anantenna coil) 18, a sensor 21, and a sensor circuit 22.

The power supply circuit 11 is a circuit generating various powersupplies to be supplied to each circuit in the semiconductor device 20based on an alternating signal input from the antenna 18. The clockgenerating circuit 12 is a circuit generating various clock signals tobe supplied to each circuit in the semiconductor device 20 based on analternating signal input from the antenna 18. The datamodulating-demodulating circuit 13 has a function of modulating anddemodulating data to be communicated with a reader-writer 19. Thecontrolling circuit 14 has a function of controlling the memory circuit16. The antenna 18 has a function of transmitting and receiving anelectromagnetic wave or an electric wave. The reader-writer 19communicates with the semiconductor device, controls the semiconductordevice, and controls processing of the data thereof. The semiconductordevice is not limited to the above structure; for example, anotherelement such as a limiter circuit of power supply voltage or hardwarededicated for code processing may be added.

The memory circuit 16 includes a memory element in which an organiccompound layer or a phase-change layer is sandwiched between a pair ofconductive layers. Note that the memory circuit 16 may include only thememory element in which an organic compound layer or a phase-changelayer is sandwiched between a pair of conductive layers or include amemory circuit having another structure. The memory circuit havinganother structure corresponds, for example, to one or a plurality of aDRAM, an SRAM, a FeRAM, a mask ROM, a PROM, an EPROM, an EEPROM, and aflash memory.

The sensor 21 is formed from a semiconductor circuit such as a resistorelement, a capacitive coupling element, an inductive coupling element, aphotovoltaic element, a photoelectric conversion element, athermoelectric conversion element, a transistor, a thermistor, or adiode. By the sensor circuit 22, a change of impedance, reactance,inductance, voltage, or current, is detected and is subjected toanalog-digital conversion (A/D conversion), so that a signal is outputto the controlling circuit 14.

Embodiment Mode 19

According to the present invention, a semiconductor device functioningas a chip having a processor circuit (hereinafter also called aprocessor chip, a wireless chip, a wireless processor, a wirelessmemory, a wireless tag or an RFID tag) can be formed. The applicationrange of the semiconductor device of the present invention is wide. Forexample, the semiconductor device of the present invention can be usedby providing for an object such as paper money, coins, securities,certificates, bearer bonds, packing containers, books, recording media,personal belongings, vehicles, food, clothing, health products,commodities, medicine, electronic devices, and the like.

The semiconductor device having a memory element using the presentinvention has good adhesion inside the memory element; therefore, apeeling and transfer process can be performed with a good state.Therefore, an element can be transferred can be freely performed tovarious types of substrates, and therefore, an inexpensive material canalso be selected for a substrate, so that the semiconductor device canbe manufactured at low cost as well as a wide function in accordancewith the intended purpose can be given. Therefore, the chip having aprocessor circuit has also such features as low-cost, small and thinsize, and light-weight according to the present invention, and thus issuitable for currency, coins circulating widely, or books, personalbelongings, clothing, or the like which tend to be carried.

Paper money and coins are money circulated in the market and include inits category ones (cash vouchers) valid in a certain area similarly tocurrency, memorial coins, and the like. Securities refer to checks,certificates, promissory notes, and the like, and can be provided with achip 190 having a processor circuit (FIG. 29A). Certificates refer todriver's licenses, certificates of residence, and the like, and can beprovided with a chip 191 having a processor circuit (FIG. 29B). Personalbelongings refer to bags, glasses, and the like, and can be providedwith a chip 197 having a processor circuit (FIG. 29C). Bearer bondsrefer to stamps, rice coupons, various gift certificates, and the like.Packing containers refer to wrapping paper for food containers and thelike, plastic bottles, and the like, and can be provided with a chip 193having a processor circuit (FIG. 29D). Books refer to hardbacks,paperbacks, and the like, and can be provided with a chip 194 having aprocessor circuit (FIG. 29E). Recording media refer to DVD software,video tapes, and the like, and can be provided with a chip 195 having aprocessor circuit (FIG. 29F). Vehicles refer to wheeled vehicles such asbicycles, ships, and the like, and can be provided with a chip 196having a processor circuit (FIG. 29G). Food refers to food articles,drink, and the like. Clothing refers to clothes, footwear, and the like.Health products refer to medical instruments, health instruments, andthe like. Commodities refer to furniture, lighting equipment, and thelike. Medicine refers to medical products, pesticides, and the like.Electronic devices refer to liquid crystal display devices, EL displaydevices, television devices (TV sets and thin TV sets), cellular phones,and the like.

The semiconductor device of the present invention is fixed on such anarticle by being mounted onto a printed-circuit board, by being attachedto a surface thereof, or by being embedded therein. For example, in thecase of a book, the semiconductor device may be embedded in paperthereof; in the case of a package made from an organic resin, thesemiconductor device may be embedded in the organic resin. Thesemiconductor device of the present invention which can realize smalland thin size and light weight does not damage the design of an articleitself even after being fixed on the article. Further, by providing thesemiconductor device of the present invention for paper money, coins,securities, certificates, bearer bonds, or the like, an identificationfunction can be provided, and forgery can be prevented by utilizing theidentification function. Further, efficiency of a system such as aninspection system can be improved by providing the semiconductor deviceof the present invention for packing containers, recording media,personal belongings, food, clothing, commodities, electronic devices, orthe like.

Next, one mode of the electronic device on which the semiconductordevice of the present invention has been mounted will be described withreference to the drawing. The electronic device exemplified here is acellular phone, which includes casings 5700 and 5706, a panel 5701, ahousing 5702, a printed-wiring board 5703, operation buttons 5704, and abattery 5705 (FIG. 21B). The panel 5701 is detachably incorporated inthe housing 5702, and the housing 5702 is fitted into the printed-wiringboard 5703. The shape and size of the housing 5702 is changedappropriately in accordance with the electronic device into which thepanel 5701 is incorporated. On the printed-wiring board 5703, aplurality of packaged semiconductor devices are mounted; thesemiconductor device of the present invention can be used as one of thepackaged semiconductor devices. The plurality of semiconductor devicesmounted on the printed-wiring board 5703 have any function of acontroller, a central processing unit (CPU), a memory, a power supplycircuit, an audio processing circuit, a sending/receiving circuit, andthe like.

The panel 5701 is connected to the printed-wiring board 5703 via aconnection film 5708. The above-described panel 5701, housing 5702, andprinted-wiring board 5703 are contained together with the operationbuttons 5704 and the battery 5705, inside the casings 5700 and 5706. Apixel portion 5709 in the panel 5701 is provided so as to be viewedthrough an opening window provided in the casing 5700.

As described above, the semiconductor device of the present inventionhas features of small and thin size, and light-weight. The features makeit possible to efficiently use the limited space inside the casings 5700and 5706 of the electronic device.

It is to be noted that the shapes of the casings 5700 and 5706 are justan example of exterior shape of the cellular phone; the electronicdevices of this embodiment mode can be changed into various modes inaccordance with the function or application

This application is based on Japanese Patent Application serial no.2006-058513 filed in Japan Patent Office on Mar. 3, 2006 the entirecontents of which are hereby incorporated by reference.

1. A method for manufacturing a semiconductor device comprising: formingan organic compound layer over a first substrate having alight-transmitting property, the organic compound layer including anorganic compound and dispersedly including a photocatalyst substance;forming an element layer over the organic compound layer; activating thephotocatalyst substance by irradiating the organic compound layer withlight through the first substrate so that the photocatalyst substanceabsorbs the light; decomposing the organic compound by the activatedphotocatalyst substance; separating the element layer from the firstsubstrate; and attaching a second substrate to a surface of the organiccompound layer, after the step of separating the element layer.
 2. Amethod for manufacturing a semiconductor device comprising: forming anorganic compound layer over a first substrate having alight-transmitting property, the organic compound layer including anorganic compound and dispersedly including a photocatalyst substance;forming an insulating layer over the organic compound layer; forming anelement layer over the insulating layer; activating the photocatalystsubstance by irradiating the organic compound layer with light throughthe first substrate so that the photocatalyst substance absorbs thelight; decomposing the organic compound by the activated photocatalystsubstance; separating the element layer and the insulating layer fromthe first substrate; and attaching a second substrate to a surface ofthe organic compound layer, after the step of separating the elementlayer and the insulating layer.
 3. A method for manufacturing asemiconductor device comprising: forming an organic compound layer overa first substrate having a light-transmitting property, the organiccompound layer including an organic compound and dispersedly including aphotocatalyst substance; forming an element layer over the organiccompound layer; activating the photocatalyst substance by irradiatingthe organic compound layer with light through the first substrate sothat the photocatalyst substance absorbs the light; decomposing theorganic compound by the activated photocatalyst substance; attaching asecond substrate to the element layer; separating the element layer fromthe first substrate with the second substrate; and attaching a thirdsubstrate to a surface of the organic compound layer, after the step ofseparating the element layer.
 4. A method for manufacturing asemiconductor device comprising: forming an organic compound layer overa first substrate having a light-transmitting property, the organiccompound layer including an organic compound and dispersedly including aphotocatalyst substance; forming an insulating layer over the organiccompound layer; forming an element layer over the insulating layer;activating the photocatalyst substance by irradiating the organiccompound layer with light through the first substrate so that thephotocatalyst substance absorbs the light; decomposing the organiccompound by the activated photocatalyst substance; attaching a secondsubstrate to the element layer; and separating the element layer and theinsulating layer from the first substrate with the second substrate; andattaching a third substrate to a surface of the organic compound layer,after the step of separating the element layer and the insulating layer.5. The method for manufacturing a semiconductor device according toclaim 3, wherein the second substrate has flexibility.
 6. The method formanufacturing a semiconductor device according to claim 4, wherein thesecond substrate has flexibility.
 7. A method for manufacturing asemiconductor device, comprising the steps of: forming an organiccompound layer over a first substrate having a light-transmittingproperty, the organic compound layer including an organic compound anddispersedly including a photocatalyst substance; forming an elementlayer over the organic compound layer; activating the photocatalystsubstance by irradiating the organic compound layer with light throughthe first substrate so that the photocatalyst substance absorbs thelight; decomposing the organic compound by the activated photocatalystsubstance; attaching a second substrate to the element layer; separatingthe element layer from the first substrate with the second substrate;and attaching a third substrate to a surface of the organic compoundlayer by an adhesive layer, after the step of separating the elementlayer.
 8. A method for manufacturing a semiconductor device, comprisingthe steps of: forming an organic compound layer over a first substratehaving a light-transmitting property, the organic compound layerincluding an organic compound and dispersedly including a photocatalystsubstance; forming an insulating layer over the organic compound layerincluding the photocatalyst substance; forming an element layer over theinsulating layer; activating the photocatalyst substance by irradiatingthe organic compound layer with light through the first substrate sothat the photocatalyst substance absorbs the light; decomposing theorganic compound by the activated photocatalyst substance; attaching asecond substrate to the element layer; separating the element layer andthe insulating layer from the first substrate with the second substrate;and attaching a third substrate to a surface of the organic compoundlayer by an adhesive layer, after the step of separating the elementlayer and the insulating layer.
 9. The method for manufacturing asemiconductor device according to claim 7, wherein the third substratedoes not transmit light.
 10. The method for manufacturing asemiconductor device according to claim 8, wherein the third substratedoes not transmit light.
 11. The method for manufacturing asemiconductor device according to claim 7, wherein the second substrateand the third substrate have flexibility.
 12. The method formanufacturing a semiconductor device according to claim 8, wherein thesecond substrate and the third substrate have flexibility.
 13. Themethod for manufacturing a semiconductor device according to claim 1,wherein a thin film transistor is formed in the element layer.
 14. Themethod for manufacturing a semiconductor device according to claim 2,wherein a thin film transistor is formed in the element layer.
 15. Themethod for manufacturing a semiconductor device according to claim 3,wherein a thin film transistor is formed in the element layer.
 16. Themethod for manufacturing a semiconductor device according to claim 4,wherein a thin film transistor is formed in the element layer.
 17. Themethod for manufacturing a semiconductor device according to claim 7,wherein a thin film transistor is formed in the element layer.
 18. Themethod for manufacturing a semiconductor device according to claim 8,wherein a thin film transistor is formed in the element layer.
 19. Themethod for manufacturing a semiconductor device according to claim 1,wherein a liquid crystal display element is included in the elementlayer.
 20. The method for manufacturing a semiconductor device accordingto claim 2, wherein a liquid crystal display element is included in theelement layer.
 21. The method for manufacturing a semiconductor deviceaccording to claim 3, wherein a liquid crystal display element isincluded in the element layer.
 22. The method for manufacturing asemiconductor device according to claim 4, wherein a liquid crystaldisplay element is included in the element layer.
 23. The method formanufacturing a semiconductor device according to claim 7, wherein aliquid crystal display element is included in the element layer.
 24. Themethod for manufacturing a semiconductor device according to claim 8,wherein a liquid crystal display element is included in the elementlayer.
 25. The method for manufacturing a semiconductor device accordingto claim 1, wherein a light-emitting layer is included in the elementlayer.
 26. The method for manufacturing a semiconductor device accordingto claim 2, wherein a light-emitting layer is included in the elementlayer.
 27. The method for manufacturing a semiconductor device accordingto claim 3, wherein a light-emitting layer is included in the elementlayer.
 28. The method for manufacturing a semiconductor device accordingto claim 4, wherein a light-emitting layer is included in the elementlayer.
 29. The method for manufacturing a semiconductor device accordingto claim 7, wherein a light-emitting layer is included in the elementlayer.
 30. The method for manufacturing a semiconductor device accordingto claim 8, wherein a light-emitting layer is included in the elementlayer.
 31. The method for manufacturing a semiconductor device accordingto claim 1, further comprising a step of: providing a back light moduleover one side of the element layer, the back light module including aplurality of light-emitting diodes provided over a flexible substrate.32. The method for manufacturing a semiconductor device according toclaim 2, further comprising a step of: providing a back light moduleover one side of the element layer, the back light module including aplurality of light-emitting diodes provided over a flexible substrate.33. The method for manufacturing a semiconductor device according toclaim 3, further comprising a step of: providing a back light moduleover one side of the element layer, the back light module including aplurality of light-emitting diodes provided over a flexible substrate.34. The method for manufacturing a semiconductor device according toclaim 4, further comprising a step of: providing a back light moduleover one side of the element layer, the back light module including aplurality of light-emitting diodes provided over a flexible substrate.35. The method for manufacturing a semiconductor device according toclaim 7, further comprising a step of: providing a back light moduleover one side of the element layer, the back light module including aplurality of light-emitting diodes provided over a flexible substrate.36. The method for manufacturing a semiconductor device according toclaim 8, further comprising a step of: providing a back light moduleover one side of the element layer, the back light module including aplurality of light-emitting diodes provided over a flexible substrate.37. The method for manufacturing a semiconductor device according toclaim 1, wherein the light is a combination of light emitted from a lamplight source and laser light.
 38. The method for manufacturing asemiconductor device according to claim 2, wherein the light is acombination of light emitted from a lamp light source and laser light.39. The method for manufacturing a semiconductor device according toclaim 3, wherein the light is a combination of light emitted from a lamplight source and laser light.
 40. The method for manufacturing asemiconductor device according to claim 4, wherein the light is acombination of light emitted from a lamp light source and laser light.41. The method for manufacturing a semiconductor device according toclaim 7, wherein the light is a combination of light emitted from a lamplight source and laser light.
 42. The method for manufacturing asemiconductor device according to claim 8, wherein the light is acombination of light emitted from a lamp light source and laser light.43. The method for manufacturing a semiconductor device according toclaim 1, wherein the photocatalyst substance has a crystal structure.44. The method for manufacturing a semiconductor device according toclaim 2, wherein the photocatalyst substance has a crystal structure.45. The method for manufacturing a semiconductor device according toclaim 3, wherein the photocatalyst substance has a crystal structure.46. The method for manufacturing a semiconductor device according toclaim 4, wherein the photocatalyst substance has a crystal structure.47. The method for manufacturing a semiconductor device according toclaim 7, wherein the photocatalyst substance has a crystal structure.48. The method for manufacturing a semiconductor device according toclaim 8, wherein the photocatalyst substance has a crystal structure.49. The method for manufacturing a semiconductor device according toclaim 1, wherein the photocatalyst substance is doped with a transitionmetal.
 50. The method for manufacturing a semiconductor device accordingto claim 2, wherein the photocatalyst substance is doped with atransition metal.
 51. The method for manufacturing a semiconductordevice according to claim 3, wherein the photocatalyst substance isdoped with a transition metal.
 52. The method for manufacturing asemiconductor device according to claim 4, wherein the photocatalystsubstance is doped with a transition metal.
 53. The method formanufacturing a semiconductor device according to claim 7, wherein thephotocatalyst substance is doped with a transition metal.
 54. The methodfor manufacturing a semiconductor device according to claim 8, whereinthe photocatalyst substance is doped with a transition metal.
 55. Themethod for manufacturing a semiconductor device according to claim 1,wherein a concentration of the photocatalyst substance in the organiccompound layer has a gradient in a film thickness direction.
 56. Themethod for manufacturing a semiconductor device according to claim 2,wherein a concentration of the photocatalyst substance in the organiccompound layer has a gradient in a film thickness direction.
 57. Themethod for manufacturing a semiconductor device according to claim 3,wherein a concentration of the photocatalyst substance in the organiccompound layer has a gradient in a film thickness direction.
 58. Themethod for manufacturing a semiconductor device according to claim 4,wherein a concentration of the photocatalyst substance in the organiccompound layer has a gradient in a film thickness direction.
 59. Themethod for manufacturing a semiconductor device according to claim 7,wherein a concentration of the photocatalyst substance in the organiccompound layer has a gradient in a film thickness direction.
 60. Themethod for manufacturing a semiconductor device according to claim 8,wherein a concentration of the photocatalyst substance in the organiccompound layer has a gradient in a film thickness direction.